Entegris, Inc.

Joseph Robert Despres

Joseph D Sweeney

Ying Tang

Sharad N Yedave

Oleg Byl

Edward Edmiston Jones

Edward A Sturm

Thomas H Baum

Peter C Van Buskirk

Anthony M Avila

Jose I Arno

W Karl Olander

Robert E Kaim

Richard S Ray

Christopher Scannell

Michael J Wodjenski

Barry Lewis Chambers

Peng Zou

Steven M Lurcott

Robert S Zeller

Paul Muzzo

Matthew B Donatucci

Chiranjeevi Pydi

Pascal Chir

Chris Scannell

Gregory Scott Baumgart

Shkelqim Letaj

Sarah A Utz

Edgar Daniel La Borde

A system and method for generating aluminum ions for implantation into a substrate. The system and method comprise flowing a chlorine-containing gas from a first vessel, optionally with a hydrogen-containing co-gas and optionally with a fluorine-containing co-gas, to an ion source chamber of an ion implantation device. The ion source chamber comprises a solid aluminum target material. At the ion source chamber, aluminum ions are generated for implantation into a substrate.

Chlorine-containing precursors for ion implantation systems and related methods

A gas storage and dispensing container includes a storage vessel, a first gas pressure regulator, and a second gas pressure regulator. The storage vessel is configured to contain a pressurized gas. The gas storage and dispensing container has a discharge flow path for discharging the pressurized gas. The first gas pressure regulator is disposed within the storage vessel, and the second gas pressure regulator is external to the storage vessel. The discharge flow path extends through the first gas pressure regulator and the second gas pressure regulator. A method of discharging gas from a gas storage and dispensing container includes a first gas pressure regulator reducing a pressure of the pressurized gas to a first pressure and a second gas pressure regulator reducing the pressure of the pressurized gas to a second pressure.

Gas storage and dispensing container and a method of dispensing therefrom

Described are ion implantation devices, systems, and methods, and in particular to an ion source that is useful for generating an aluminum ion beam.

Method and systems useful for producing aluminum ions

The current disclosure is directed to methods and assemblies configured to deliver a mixture of germanium tetrafluoride (GeF) and hydrogen (H) gases to an ion implantation apparatus, so His present in an amount in the range of 25%-67% (volume) of the gas mixture, or the GeFand Hare present in a volume ratio (GeF:H) in the range of 3:1 to 33:67. The use of the Hgas in an amount in mixture or relative to the GeFgas prevents the volatilization of cathode material, thereby improving performance and lifetime of the ion implantation apparatus. Gas mixtures according to the disclosure also result in a significant Gecurrent gain and Wpeak reduction during au ion implantation procedure.

Germanium tetraflouride and hydrogen mixtures for an ion implantation system

A system and method for ion implantation is described, which includes a gas or gas mixture including at least one ionizable gas used to generate ionic species and an arc chamber that includes two or more different arc chamber materials. Using the system ionic species are generated in the arc chamber with liner combination, and one or more desired ionic species display a higher beam current among the ionic species generated, which is facilitated by use of the different materials. In turn improved implantation of the desired ionic species into a substrate can be achieved. Further, the system can minimize formation of metal deposits during system operation, thereby extending source life and promoting improved system performance.

Ion implantation system with mixture of arc chamber materials

A system and method for fluorine ion implantation is described, which includes a fluorine gas source used to generate a fluorine ion species for implantation to a subject, and an arc chamber that includes one or more non-tungsten materials (graphite, carbide, fluoride, nitride, oxide, ceramic). The system minimizes formation of tungsten fluoride during system operation, thereby extending source life and promoting improved system performance. Further, the system can include a hydrogen and/or hydride gas source, and these gases can be used along with the fluorine gas to improve source lifetime and/or beam current.

Fluorine ion implantation system with non-tungsten materials and methods of using

Described are storage and dispensing vessels and related systems and methods, for dispensing reagent gas from a vessel in which the reagent gas is held in sorptive relationship to a solid adsorbent medium, the reagent gas being contained at super-atmospheric pressure and the solid adsorbent medium comprising a metal-organic framework.

Adsorbent-based, mechanically-regulated gas storage and delivery vessel

The current disclosure is directed to methods and assemblies configured to deliver a mixture of germanium tetrafluoride (GeF) and hydrogen (H) gases to an ion implantation apparatus, so His present in an amount in the range of 25%-67% (volume) of the gas mixture, or the GeFand Hare present in a volume ratio (GeF:H) in the range of 3:1 to 33:67. The use of the Hgas in an amount in mixture or relative to the GeFgas prevents the volatilization of cathode material, thereby improving performance and lifetime of the ion implantation apparatus. Gas mixtures according to the disclosure also result in a significant Gecurrent gain and Wpeak reduction during an ion implantation procedure.

A valve system having a valve position indicator is disclosed. The valve position indicator allows for viewing of the valve position from one or more viewing locations. In one example, the valve position indicator includes a side valve open/close indicator and a top valve open/close indicator on a valve assembly. An indicator locking mechanism securely locks the valve position indicator in alignment with a position of a control valve.

Valve system with position indicator

An ion source apparatus for ion implantation is described, including an ion source chamber, and a consumable structure in or associated with the ion source chamber, in which the consumable structure includes a solid dopant source material susceptible to reaction with a reactive gas for release of dopant in gaseous form to the ion source chamber, wherein the solid dopant source material comprises gallium nitride, gallium oxide, either of which may be isotopically enriched with respect to a gallium isotope, or combinations thereof.

Ion implantation processes and apparatus using gallium

A fluid supply package is described, which includes a fluid storage and dispensing vessel, and a fluid dispensing assembly coupled to the vessel and configured to enable discharge of fluid from the vessel under dispensing conditions, wherein the fluid supply package includes an informational augmentation device thereon, e.g., at least one of a quick read (QR) code and an RFID tag, for informational augmentation of the package. Process systems are described including process tools and one or more fluid supply packages of the foregoing type, wherein the process tool is configured for communicative interaction with the fluid supply package(s). Various communicative arrangements are described, which are usefully employed to enhance the efficiency and operation of process systems in which fluid supply packages of the foregoing type are employed.

Smart package

A gas supply vessel for storing and dispensing a reagent gas including a filter such that the vessel is capable of delivering the reagent gas, after it is filtered, at a high level of purity. The filter includes a porous sintered body and is effective to provide a desired level of purity of a supplied reagent gas by flowing the reagent gas through the filter during delivery from the vessel at a low pressure, at a relatively low flow rate, and with a relatively low pressure drop across the filter.

Gas supply vessel

A gas supply assembly is described for delivery of gas to a plasma flood gun which includes an inert gas and a fluorine-containing gas, wherein the assembly is configured to deliver a volume of the fluorine-containing gas to the flood gun that is not greater than 10% of a total volume of the fluorine-containing and inert gasses. The fluorine-containing gas can generate volatile reaction product gases from material deposits in the plasma flood gun, and to effect re-metallization of a plasma generation filament in the plasma flood gun. In combination with the gas amounts, the assembly and methods can use gas flow rates to optimize the cleaning effect and reduce filament material loss from the plasma flood gun during use.

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Middletown, CT, United States of America

Joseph Robert Despres