US Government As Represented by the Secretary of the Army

Joseph R Flemish

Vladimir Sinisa Ban

Kenneth A Jones

Honghua Du

Alok Tripathi

A method and crucible for annealing SiC at high temperatures. The crucible s a vessel having a peripheral wall, at least two compartments separated by an inner wall within the peripheral wall and a lid which separates the compartments from the crucible surroundings while providing a passageway between the compartments. The peripheral wall, inner wall and lid are composed of materials capable of withstanding annealing temperatures. The process disposes an SiC wafer in one of the compartments and SiC powder disposed in another of the compartments. The SiC powder is present to hinder SiC wafer decomposition during annealing of the SiC wafer. The crucible is then heated to a temperature sufficient anneal the SiC wafer, preferably after evacuating air and flowing an inert gas in and around the crucible.

Method of annealing silicon carbide for activation of ion-implanted

A method and crucible for annealing SiC at high temperatures. The crucible is a vessel having a peripheral wall, at least two compartments separated by an inner wall within the peripheral wall and a lid which separates the compartments from the crucible surroundings while providing a passageway between the compartments. The peripheral wall, inner wall and lid are composed of materials capable of withstanding annealing temperatures. The process disposes an SiC wafer in one of the compartments and SiC powder disposed in another of the compartments. The SiC powder is present to hinder SiC wafer decomposition during annealing of the SiC wafer. The crucible is then heated to a temperature sufficient anneal the SiC wafer, preferably after evacuating air and flowing an inert gas in and around the crucible.

An organometallic precursor as for example trimethyl indium (TMI) is co-injected with HCl into a hot wall reactor to form volatile InCl, and PH.sub.3 is used as the phosphorus source. Layers of InP are grown at approximately 8 .mu.m/hr with excellent morphology and good electrical properties. Hall measurements at 77K show background n-type conductivity with n=7.times.10.sup.15 /cm.sup.3 and .mu..sup.S 34,000 cm.sub.2 /V-s. The method is capable of growing ternary and quaternary heterostructures with thin layers and abrupt junctions.

Method of growing device quality InP onto an InP substrate using an

A conventional hydride VPE reactor is modified by the addition of a gas switching manifold and the use of three way pneumatic valves in the manifold to alternately direct the flow of reactant gas mixtures into either the reactor or a vent line. With these additions, various predetermined gas mixtures of arsine, phosphine, and hydrogen selected by electronic mass flow controllers (GM1 and GM2) and predetermined gas mixtures of H.sub.2 and HCl (GM3) may be alternately infused into the reactor chamber or vented as desired. When GM3 is injected into the reactor chamber, the content of GaAs of the growing layer increases while the content of In decreases. Given this, when GM3 and GM2 are vented rather than injected into the furnace and GM1 is directed into the furnace, a layer of InGaAsP with a predetermined composition (A) will be deposited. Alternatively, when GM3 and GM2 are co-injected into the reactor and GM1 is be directed to the vent, a layer of InGaAsP of a predetermined composition (B) will be deposited. Therefore, the flow rates of HCl, PH.sub.3 and AsH.sub.3 can be adjusted to produce compositions A and B that correspond to a lattice-matched condition with either InP or GaAs substrate.

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Westfield, NJ, United States of America

Joseph R Flemish