International Business Machines Corporation

Joseph P Walko

Justin Wai-chow Wong

Sudesh Saroop

Ronald G Meunier

June Cline

Pamela Castalino

Peter W Schneider

Kellie L Dutra

Robert A Calderoni

Disclosed are embodiments of a method, a system and a program storage device for simulating electronic device performance as a function of process variations. In these embodiments, functions of a primary model parameter for each of multiple secondary model parameters across multiple different process conditions can be determined based on a relatively small number of target sets of device characteristics. These functions can then be used to augment a simulator so that during subsequent simulations of the electronic device over a wide range of varying process conditions, a change in a value for the primary model parameter will automatically result in corresponding changes in values for the secondary model parameters. By augmenting the simulation environment in this manner, the disclosed embodiments efficiently provide more robust simulation results over prior art techniques.

Method, system and program storage device for simulating electronic device performance as a function of process variations

Disclosed is a method and system for detecting abnormal plasma discharge that is useful in, for example, detecting plasma leakage in a reactive ion etching (RIE) chamber. The system includes electrical contacts connected to the chamber that provide an input signal to the chamber. This input signal can be generated by a radio frequency (RF) generator that is connected to the electrical contacts. A variable power controller connected to the RF generator gradually increases (ramps) the power of the input signal being supplied to the chamber.

Measurement to determine plasma leakage

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Jericho, VT, United States of America

Joseph P Walko