Asm America, Inc.

Joseph P Italiano

Paul D Brabant

Chantal Arena

Matthias Bauer

Pierre Tomasini

Ivo Johannes Raaijmakers

Ravinder K Aggarwal

Mark R Hawkins

Robert Michael Vyne

Mike Halpin

Tony J Keeton

Armand Ferro

Bob Haro

Gregory M Bartlett

Matt G Goodman

Lee Haen

Jereon Stoutyesdijk

Nyles Wynn Cody

Keith Doran Weeks

Paul T Jacobson

Ronald T Bertram

Jeroen Stoutyesdijk

Matt Goodman

Bobby Vyne

Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.

Epitaxial semiconductor deposition methods and structures

A substrate support system comprises a substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder supports a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. A hollow support member provides support to an underside of, and is configured to convey gas upward into one or more of the passages of, the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder. Depending upon the embodiment, the gas then flows either outward and upward around the substrate edge (to inhibit backside deposition of reactant gases above the substrate) or downward through passages of the substrate holder, if any, that do not lead back into the hollow support member (to inhibit autodoping by sweeping out-diffused dopant atoms away from the substrate backside).

Substrate support system for reduced autodoping and backside deposition

Chemical vapor deposition methods use trisilane and a halogen-containing etchant source (such as chlorine) to selectively deposit Si-containing films over selected regions of mixed substrates. Dopant sources may be intermixed with the trisilane and the etchant source to selectively deposit doped Si-containing films. The selective deposition methods are useful in a variety of applications, such as semiconductor manufacturing.

Selective deposition of silicon-containing films

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Phoenix, AZ, United States of America

Joseph P Italiano