Nvidia Corporation

Joseph Minacapelli

Joseph Greco

Thomas Edward Dewey

Simon A Thomas

James K Dobbins

Jun Zhai

Abraham Fong Yee

John Y Chen

Joe Greco

Teckgyu (Terry) Kang

A TSV of a first semiconductor die may extend from a semiconductor substrate of the first semiconductor die through at least one metallization layer of the die to connect to a metallization layer to supply power to the second semiconductor die. By extending the TSV, resistance may be reduced, allowing for enhanced power delivery to the second semiconductor die. Resistance may be further reduced by allowing for the TSV to connect to a thicker metallization layer than would otherwise be possible. Also, in some embodiments, the TSV may connect to a metallization layer that is suitable for supplying power to both semiconductor dies. The first semiconductor die may be a top die or a bottom die in a face-to-face arrangement. Disclosed concepts may be extended to any number of dies included in a die stack that includes the face-to-face arrangement.

Extended through wafer vias for power delivery in face-to-face dies

In accordance with the disclosure, one or both semiconductor dies in a face-to-face arrangement may include a probe pad layer formed on a face of the die to allow the die to be individually tested prior to assembly of the dies. Thus, faulty dies may be discarded individually so they are not included in a composite semiconductor device, thereby increasing device yields. The probe pad layer also allows dies to be matched so that a composite semiconductor device achieves desired performance, which may further increase device yields. In some embodiments, the probe pads of the probe pad layer formed on the face of the die may be used to individually test the die, and may remain inactive, or inert, during operation of the composite semiconductor device.

Face-to-face dies with probe pads for pre-assembly testing

In accordance with the disclosure, an inductor may be formed over a semiconductor substrate of one or both dies in a face-to-face die arrangement while reducing the parasitic capacitance between the inductor and the adjacent die. In disclosed embodiments, a semiconductor device may include a void (e.g., an air gap) between the inductor and the adjacent die to reduce the parasitic capacitance between the inductor and the adjacent die. The void may be formed in the die that includes the inductor and/or the adjacent die. In some respects, the void may be etched in interface layers (e.g., comprising bump pads and dielectric material) between the semiconductor dies, and may extend along the length of the inductor.

Face-to-face dies with a void for enhanced inductor performance

Face-to-face dies with enhanced power delivery using extended TSVS

An IC system includes low-power chips, e.g., memory chips, located proximate one or more higher power chips, e.g., logic chips, without suffering the effects of overheating. The IC system may include a high-power chip disposed on a packaging substrate and a low-power chip embedded in the packaging substrate to form a stack. Because portions of the packaging substrate thermally insulate the low-power chip from the high-power chip, the low-power chip can be embedded in the IC system in close proximity to the high-power chip without being over heated by the high-power chip. Such close proximity between the low-power chip and the high-power chip advantageously shortens the path length of interconnects therebetween, which improves device performance and reduces interconnect parasitics in the IC system.

System with a high power chip and a low power chip having low interconnect parasitics

One embodiment of the present invention sets forth a technique for packaging an integrated circuit die. The technique includes bonding a first surface of the integrated circuit die to a first substrate via a first plurality of solder bump structures and bonding a second substrate to a second surface of the integrated circuit die. The technique further includes bonding the first substrate to a third substrate via a second plurality of solder bump structures and, after bonding the first substrate to the third substrate, removing the second substrate from the second surface of the integrated circuit die. The technique further includes disposing a heat sink on the second surface of the integrated circuit die.

Removable substrate for controlling warpage of an integrated circuit package

A multi-configuration interface device for coupling different types of GPUs (graphics processor units) to a PCB (printed circuit board). The interface device comprises a GPU interface for a connection to the GPU and a PCB interface for a connection to the PCB. The GPU interface is implemented using a customizable attachment footprint for effectuating a connection to differing GPU types while maintaining the PCB interface for the connection to the PCB. The ball array for different GPUs can be configured to respectively support them. The interface device maintains a consistent PCB interface. Thus, as GPU characteristics change and evolve, or as different GPU versions are implemented, a consistent connection can be maintained for the PCB.

Multi-configuration GPU interface device

An apparatus to design a via pad of a via is described. In one embodiment, the apparatus includes a vertex determination module configured to determine a vertex of the via pad based on a position of a trace that is connected to the via. The apparatus also includes a contour definition module configured to define an extended contour of the via pad based on the vertex. The extended contour is defined such that an electrical length design characteristic of the trace is substantially unchanged by the extended contour.

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Sunnyvale, CA, United States of America

Joseph Minacapelli