Element Six Technologies Limited

Element Six Gmbh

Joseph Michael Dodson

John Robert Brandon

Timothy Peter Mollart

Christopher John Howard Wort

Alexander Lamb Cullen

Daniel James Twitchen

Geoffrey Alan Scarsbrook

Jonathan James Wilman

Paul Nicholas Inglis

Stephen David Williams

Steven Edward Coe

Paul Nicolas Inglis

Charles Simon James Pickles

Carlton Nigel Dodge

Gruffudd Trefor Williams

Christopher John Wort

Matthew Lee Markham

Ian Friel

Sarah Louise Geoghegan

Patrick Robert Unwin

Mark Edward Newton

Julie Victoria MacPherson

Mark Robin McClymont

Laura Anne Hutton

Yevgeny Vasilievich Anoikin

Fedor Jelezko

Richard Stuart Balmer

Christopher John Kelly

Eleni Bitziou

Nicola Louise Palmer

Charles Simon Pickles

Daniel Twitchen

A polycrystalline CVD synthetic diamond material is provided that has an average thermal conductivity at room temperature through a thickness of the polycrystalline CVD synthetic diamond material of between 1700 and 2400 WmK, a thickness of at least 2.5 mm and a visible transmittance through the thickness of the polycrystalline CVD synthetic diamond of at least 25%. A wafer comprising the material is also provided, wherein at least 70% of a total area of the wafer has the properties of the polycrystalline CVD synthetic diamond material. A method for fabricating the wafer is also disclosed.

Polycrystalline chemical vapour deposition synthetic diamond material

A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition includes a microwave generator configured to generate microwaves at a frequency f, a plasma chamber that defines a resonance cavity for supporting a microwave resonance mode, a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber, a gas flow system for feeding process gases into the plasma chamber and removing them therefrom, and a substrate holder disposed in the plasma chamber and having a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use. The resonance cavity is configured to have a height that supports a TMresonant mode at the frequency f and is further configured to have a diameter that satisfies the condition that a ratio of the resonance cavity height/the resonance cavity diameter is in the range 0.3 to 1.0.

Microwave plasma reactor for manufacturing synthetic diamond material

A heat sink comprising a heat spreader () made from synthetic diamond and having a front surface for mounting one or more components to be cooled like a laser disc () and a rear surface for direct fluid cooling (). A plurality of ribs () is bonded to the rear surface of the heat spreader () to stiffen the heat spreader. Both the heat spreader and the plurality of ribs are formed of synthetic diamond material. The ribs () may be fixed to the heat spreader by braze bonds ().

Heat sink comprising synthetic diamond material

An attenuated total reflection (ATR) crystal () for ATR spectroscopy of a sample to be analysed. The ATR crystal is formed of a diamond material and configured to have an inlet surface () for an infrared analysis beam, an outlet surface () for the infrared analysis beam, and a working surface () for contacting the sample to be analysed. The ATR crystal () is in the form of a chamfered cylinder comprising two flat chamfered side walls forming the inlet and outlet surfaces (), and an end surface of the chamfered cylinder forming the working surface (). The analysis beam can be directed through the inlet surface () to an inner side of the working surface () in contact with the sample to be analysed and internally reflected at the inner side of the working surface () in contact with the sample to be analysed such that the analysis beam passes out of the ATR crystal through the outlet surface (). The working surface () is convexly curved.

Attenuated total reflection crystal fabricated from diamond material

A polycrystalline chemical vapor deposited (CVD) diamond wafer comprising:

Large area optical quality synthetic polycrystalline diamond window

A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapor deposition, the microwave plasma reactor comprising: a microwave generator configured to generate microwaves at a frequency f; a plasma chamber comprising a base, a top plate, and a side wall extending from said base to said top plate defining a resonance cavity for supporting a microwave resonance mode, wherein the resonance cavity has a central rotational axis of symmetry extending from the base to the top plate, and wherein the top plate is mounted across said central rotational axis of symmetry; a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; and a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use; wherein the resonance cavity is configured to have a height, as measured from the base to the top plate of the plasma chamber, which supports a TMresonant mode between the base and the top plate at said frequency f, and wherein the resonance cavity is further configured to have a diameter, as measured at a height less than 50% of the height of the resonance cavity as measured from the base, which satisfies the condition that a ratio of the resonance cavity height/the resonance cavity diameter is in the range 0.3 to 1.0.

A boron doped synthetic diamond material which has the following characteristics: a solvent window meeting one or both of the following criteria as measured by sweeping a potential of the boron doped synthetic diamond material with respect to a saturated calomel reference electrode in a solution containing only deionized water and 0.1M KNOas a supporting electrolyte at pH 6: the solvent window extends over a potential range of at least 4.1 V wherein end points of the potential range for the solvent window are defined when anodic and cathodic current density measured at the boron doped synthetic diamond material reaches 38 mA cm; and the solvent window extends over a potential range of at least 3.3 V wherein end points of the potential range for the solvent window are defined when anodic and cathodic current density measured at the boron doped synthetic diamond material reaches 0.4 mA cm; a peak-to-peak separation &#x394;Ep (for a macroelectrode) or a quartile potential &#x394;E(for a microelectrode) of no more than 70 mV as measured by sweeping a potential of the boron doped synthetic diamond material at a rate of 100 mV swith respect to a saturated calomel reference electrode in a solution containing only deionized water, 0.1M KNO3 supporting electrolyte, and 1 mM of FcTMAor Ru(NH)6at pH 6; and a capacitance of no more than 10 &#x3bc;F cmas measured by sweeping a potential of the boron doped synthetic diamond material with respect to a saturated calomel reference electrode between 70 mV and &#x2212;70 mV in a solution containing only deionized water and 0.1M KNOsupporting electrolyte at pH 6, measuring resultant current, subtracting a current value at 0 V when sweeping towards negative potentials from a current value at 0 V when sweeping towards positive potentials, dividing the subtracted current value by 2, and then dividing the result by an area (cm) of the boron doped synthetic diamond material and by a rate at which the potential is swept (Vs) to give a value for capacitance in F cm.

Synthetic diamond materials for electrochemical sensing applications

A mirror for use in high power optical applications, the mirror comprising:

Synthetic diamond optical mirrors

A polycrystalline chemical vapor deposited (CVD) diamond wafer comprising: a largest linear dimension equal to or greater than 125 mm; a thickness equal to or greater than 200 &#x3bc;m; and one or both of the following characteristics measured at room temperature (nominally 298 K) over at least a central area of the polycrystalline CVD diamond wafer, said central area being circular, centered on a central point of the polycrystalline CVD diamond wafer, and having a diameter of at least 70% of the largest linear dimension of the polycrystalline CVD diamond wafer: an absorption coefficient &#x2266;0.2 cmat 10.6 &#x3bc;m; and a dielectric loss coefficient at 145 GHz, of tan &#x3b4;&#x2266;2&#xd7;10.

The present disclosure relates to substrates for use in microwave plasma reactors. Certain substrates include a cylindrical disc of a carbide forming refractory metal having a flat growth surface on which CVD diamond is to be grown and a flat supporting surface opposed to said growth surface. The cylindrical disc may have a diameter of 80 mm or more. The growth surface may have a flatness variation no more than 100 mm The supporting surface may have a flatness variation no more than 100 mm.

Microwave plasma reactors and substrates for synthetic diamond manufacture

A polycrystalline chemical vapour deposited (CVD) diamond wafer comprising: a largest linear dimension equal to or greater than 70 mm; a thickness equal to or greater than 1.3 mm; and one or both of the following characteristics measured at room temperature (nominally 298 K) over at least a central area of the polycrystalline CVD diamond wafer, said central area being circular, centred on a central point of the polycrystalline CVD diamond wafer, and having a diameter of at least 70% of the largest linear dimension of the polycrystalline CVD diamond wafer: an absorption coefficient &#x2266;0.2 cmat 10.6 &#x3bc;m; and a dielectric loss coefficient at 145 GHz, of tan &#x3b4;&#x2266;2&#xd7;10.

A method of fabricating a polycrystalline CVD synthetic diamond material having an average thermal conductivity at room temperature through a thickness of the polycrystalline CVD synthetic diamond material of at least 2000 WmK, the method comprising: loading a refractory metal substrate into a CVD reactor; locating a refractory metal guard ring around a peripheral region of the refractory metal substrate, the refractory metal guard ring defining a gap between an edge of the refractory metal substrate and the refractory metal guard ring having a width 1.5 mm to 5.0 mm; introducing microwaves into the CVD reactor at a power such that the power density in terms of power per unit area of the refractory metal substrate is in a range 2.5 to 4.5 W mm; introducing process gas into the CVD reactor wherein the process gas within the CVD reactor comprises a nitrogen concentration in a range 600 ppb to 1500 ppb calculated as molecular nitrogen N2, a carbon containing gas concentration in a range 0.5% to 3.0% by volume, and a hydrogen concentration in a range 92% to 98.5% by volume; controlling an average temperature of the refractory metal substrate to lie in a range 750&#xb0; C. to 950&#xb0; C. and to maintain a temperature difference between an edge and a centre point on the refractory metal substrate of no more than 80&#xb0; C. growing polycrystalline CVD synthetic diamond material to a thickness of at least 1.3 mm on the refractory metal substrate; and cooling the polycrystalline CVD synthetic diamond material to yield a polycrystalline CVD synthetic diamond material having a thickness of at least 1.3 mm, an average thermal conductivity at room temperature through the thickness of the polycrystalline CVD synthetic diamond material of at least 2000 WmKover at least a central area of the polycrystalline CVD synthetic diamond material, wherein the central area is at least 70% of a total area of the polycrystalline CVD synthetic diamond material, a single substitutional nitrogen concentration no more than 0.80 ppm over at least the central area of the polycrystalline CVD synthetic diamond material, and wherein the polycrystalline CVD synthetic diamond material is substantially crack free over at least the central area thereof such that the central area has no cracks which intersect both external major faces of the polycrystalline CVD synthetic diamond material and extend greater than 2 mm in length.

Thick polycrystalline synthetic diamond wafers for heat spreading applications and microwave plasma chemical vapour depositon synthesis techniques

A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising:

A method of manufacturing an optical element, the method comprising: growing a first layer of single crystal diamond material via a chemical vapor deposition technique using a gas phase having a first nitrogen concentration; growing a second layer of single crystal diamond material over said first layer via a chemical vapor deposition technique using a gas phase having a second nitrogen concentration, wherein the second nitrogen concentration is lower than the first nitrogen concentration; forming an optical element from at least a portion of the second layer of single crystal diamond material; and forming an out-coupling structure at a surface of the optical element for increasing out-coupling of light.

Diamond optical element

Single crystal diamond material produced using chemical vapour deposition (CVD), and particularly diamond material having properties suitable for use in optical applications such as lasers, is disclosed. In particular, a CVD single crystal diamond material having preferred characteristics of longest linear internal dimension, birefringence and absorption coefficient, when measured at room temperature, is disclosed. Uses of the diamond material, including in a Raman laser, and methods of producing the diamond are also disclosed.

Growing community of inventors

Berkshire, United Kingdom

Joseph Michael Dodson