International Business Machines Corporation

Other

Joseph M Harvilchuck

Mario John Interrante

Thomas Anthony Wassick

Sudipta Kumar Ray

Raymond A Jackson

William Edward Sablinski

Raj N Master

Arnold F Schmeckenbecher

John James Gniewek

Edward F Handford

Rebecca P Fleming

Donald W Baudrand

Robert G Biskeborn

John Ulrich Knickerbocker

David Clifford Long

David Carroll Challener

Krishna Seshan

Charles Hampton Perry

Lester W Herron

James Marc Leas

Arunava Gupta

Robert W Nufer

Joseph S Logan

Philip L Flaitz

Srinivasa N Reddy

Norman G Ainslie

James R Lloyd

Horatio Quinones

Joseph L Horvath

Paul H Palmateer

Paul M Schaible

Avinash S Adwalpalker

Keith F Beckham

Steven P Young

William C Metzger

Joseph R Ranalli

David W Rich

William J King, Jr

John F Sullivan

Morris Shatzkes

Arlyne M Flanagan

A process for simultaneously selectively depositing a high purity nickel containing alloy (i.e. a nickel-boron alloy having a nickel content in excess of 99.5 percent) over a preformed metallurgy pattern (including the individual, electrically isolated contact pads and the seal band area thereon) on the top-side dielectric surface of a multi-layer ceramic module. The metallurgy pattern on such top-side surface of such module is appropriately catalyzed and then immersed in a bath which is essentially lead-free and which includes a source of nickel ions, a borane reducing agent, and an effective amount of an organic divalent sulfur compound, preferably thiodiglycollic acid. The contact pads and the seal band area so plated exhibit an exceptionally uniform layer of nickel-boron alloy, free of surface irregularities, which layer is characterized by low contact resistance, excellent wire bonding and eutectic diode bonding characteristics and is both crack-free at the time of its being deposited and remains crack-free under brazing conditions throughout the life of the component.

Process for selectively depositing a nickel-boron coating over a

The present invention relates generally to a new method of repairing electrical lines, and more particularly to repairing electrical lines having an opening at the module level with devices in place. Various methods and processes are used to repair this open or defective portion in an electrical conductor line. It could be repaired by securing a jumper wire or nugget across the open or the repair could be made by a deposition process, which includes but is not limited to filling the opening with a solder type material or inserting a solder coated electrical wire and heating the solder and allowing the solder to melt and repair the open. One of the attributes of this invention is the ability to repair on a substrate or module on which active components such as chips, and passive components such as pins, capacitors, etc. have been attached. The invention also allows repair of fine line patterns which are normally not repairable by conventional techniques.

Structure for repairing electrical lines

The present invention relates generally to a new method of repairing electrical lines, and more praticularly to repairing electrical lines having an open at the module level with devices in place. Various methods and processes are used to repair this open or defective portion in an electrical conductor line. It could be repaired by securing a jumper wire or nugget across the open or the repair could be made by a deposition process, which includes but is not limited to filling the open with a solder type material or inserting a solder coated electrical wire and heating the solder and allowing the solder to melt and repair the open. One of the attributes of this invention is the ability to repair on a substrate or module on which active components such as chips, and passive components such as pins, capacitors, etc. have been attached. The invention also allows repair of fine line patterns which are normally not repairable by conventional techniques.

Method and structure for repairing electrical lines

A method for co-sintering ceramic/metal multi-layered ceramic substrates wherein X-Y shrinkage is controlled and X-Y distortion and Z-direction chamber are substantially eliminated. Binder-burnoff is substantially not aggravated during this process as well. The process is accomplished by applying selective forces to the surfaces of the ceramic substrates to control lateral movement while allowing Z direction shrinkage movement. Frictional force means, pneumatic forced means and weights are among the means used to supply forces. Cerium oxide is used in certain embodiments to enhance binder-burnoff.

Method and means for co-sintering ceramic/metal MLC substrates

The present invention dissipates the heat generated by high powered VLSI chips to a heat sink in a very efficient manner, providing a thermal resistance heretofore not possible in heat conduction module cold plate type systems. A finned internal thermal device having a flat bottom contacts the chips, while corresponding fins in a finned cooling hat mounted to a cold plate form gaps into which the fins of the finned internal thermal devices are slidably mounted. A preferred double cantilever spring between the finned internal thermal devices and fins of the finned cooling hat and a compliant thermally conductive interface such as synthetic oil between the chips and flat base of the finned internal devices provide efficient, non-rigid interfaces throughout the system, while assuring good thermal contact between the system components. The present high conduction cooling module allows for the simple incorporation of side biasing means and a grooved chip interface on the finned internal thermal devices to provide enhanced thermal performance if required.

High conduction cooling module having internal fins and compliant

A method for causing an open circuit in an electrical conductor is provided, including the steps of: conducting a direct current through the conductor; and applying heat at a selected location on the conductor whereat it is desired to cause the open circuit of the conductor.

Method and apparatus for causing an open circuit in a conductive line

Brazing of elements to electronic chip carrying substrates requires brazing materials strong at high temperatures used to remove and replace chips. Flanges and pins are brazed with Au:Sn brazing alloys modified during brazing by addition of copper to the brazing material to promote formation of the higher melting point .beta. phase of the alloy and a Group VIII metal to draw Sn out of the melt by gettering, also to promote formation of the .beta. phase of the alloy and to thicken the braze material. A copper preform is plated with Ni and juxtaposed with surfaces to be brazed and the brazing material to add Ni and copper to the melt.

High melting point copper-gold-tin brazing alloy for chip carriers

A method for fabricating metallurgical contacts is disclosed for making thermocompression bonds to a metallized ceramic substrate on which semiconductor chips are to be mounted and electrically contacted. The method comprises placing a nickel layer on the metallized portion of the substrate and then covering the nickel with an immersion layer of gold. The gold immersion layer is selectively removed from locations where thermocompression-bonded contacts are desired. Removal is accomplished by applying a chemical stripper. Heavy gold is electroplated on said locations and the assemblage is heat treated prior to placement of the thermocompression-bonded contacts.

Stripped gold plating process

A process for etching aluminum wherein a masked layer of aluminum, supported on a substrate, is exposed to a plasma formed by imposing an RF voltage across at least two spaced electrodes in an ambient including a gas selected from the group consisting of CCl.sub.4, Cl.sub.2, Br.sub.2, HCl. The resultant conditions provide a reactive environment where the aluminum is bombarded with chlorine or bromine ions. The aluminum reacts with chlorine or bromine ions to form an aluminum chloride or bromide compound, which is volatile at the temperature of the sputtered substrate.

Reactive ion etching of aluminum

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Billings, NY, United States of America

Joseph M Harvilchuck