Aeroflex Colorado Springs Inc.

Aeroflex Utmc Microelectronic Systems, Inc.

Utmc Microelectronic Systems Inc.

Joseph M Benedetto

David B Kerwin

A bonded wafer structure having a handle wafer, a device wafer, and an interface region with an abrupt transition between the conductivity profile of the device wafer and the handle wafer is used for making semiconductor devices. The improved doping profile of the bonded wafer structure is well suited for use in the manufacture of integrated circuits. The bonded wafer structure is especially suited for making radiation-hardened integrated circuits.

Wafer structure for electronic integrated circuit manufacturing

A radiation shielding system for protecting an integrated circuit package from ionizing radiation is provided for an integrated circuit package which is substantially planar and has a plurality of package leads extending from at least one surface of the package, substantially perpendicular to a surface of the integrated circuit package. The system comprises a base portion comprising shielding material and defining a well for receiving the integrated circuit package. A lid of shielding material is provided for being attached to the base portion to completely encompass the integrated circuit package. The system also includes means for allowing portions of each of the package leads to exit the well when the integrated circuit package is within the well. The means includes insulating material.

Radiation shielded carriers for sensitive electronics

A radiation shielded integrated circuit device comprises an integrated circuit die and a first layer of shielding material supporting the integrated circuit die. The first layer has a central portion having a first thickness having an area at least as large as the area of the IC die, and an outer portion having a second thickness less than the first thickness. A wall of ceramic material has a first edge connected to the outer portion of the first layer of shielding material. The wall of ceramic material has an inner surface defining, in conjunction with the first layer of shielding material, a well containing the integrated circuit die. A plurality of wire bond pads are supported by the inner surface of the ceramic wall. A plurality of input/output pads are connected to an exterior surface of the ceramic walls. Conducting material extending through the ceramic material connects each of the wire bond pads to a respective one of input/output pads. Wire bands connect the integrated circuit die to the wire band pads. A second layer of shielding material is connected to a second edge of the ceramic wall. A radiation shield is also disclosed.

Radiation shield and radiation shielded integrated circuit device

A radiation shield for protecting an integrated circuit device from harmful radiation has a high Z shielding material for absorbing radiation. The radiation shield has a planar lower surface in contact with an upper surface of the integrated circuit device. The radiation shield also has a central portion in substantial registration with integrated circuit device. The central portion has a thickness sufficient to absorb harmful radiation. A distal portion is located about the central portion. A transitional portion is located between and connects the central and distal portions. The transitional portion has a minimum thickness, as, measured from the integrated circuit, that is about equal to the thickness of the central portion.

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Monument, CO, United States of America

Joseph M Benedetto