Bfly Operations, Inc.

Butterfly Network, Inc.

Maxim Integrated Products, Inc.

Joseph Lutsky

Keith Glen Fife

Nevada J Sanchez

Kailiang Chen

Susan A Alie

David Grosjean

Tyler S Ralston

Jianwei Liu

Jonathan Marc Rothberg

Jungwook Yang

Youn-Jae Kook

Hamid Soleimani

Leung Kin Chiu

Chao Chen

Sebastian Schaetz

Jihee Lee

Jerzy Antoni Teterwak

Lingyun Miao

Sarp Satir

Daniel Rea McMahill

Aspects of the technology described herein relate to built-in self-testing (BIST) of circuitry (e.g., a pulser or receive circuitry) and/or transducers in an ultrasound device. A BIST circuit may include a transconductance amplifier coupled between a pulser and receive circuitry, a capacitor network coupled between a pulser and receive circuitry, and/or a current source couplable to the input terminal of receive circuitry to which a transducer is also couplable. The collapse voltages of transducers may be characterized using BIST circuitry, and a bias voltage may be applied to the membranes of the transducers based at least in part on their collapse voltages. The capacitances of transducers may also be measured using BIST circuitry and a notification may be generated based on the sets of measurements.

Methods and circuitry for built-in self-testing of circuitry and/or transducers in ultrasound devices

Micromachined ultrasonic transducers having pressure ports are described. The micromachined ultrasonic transducers may comprise flexible membranes configured to vibrate over a cavity. The cavity may be sealed, in some instances by the membrane itself. A pressure port may provide access to the cavity, and thus control of the cavity pressure. In some embodiments, an ultrasound device including an array of micromachined ultrasonic transducers is provided, with pressure ports for at least some of the ultrasonic transducers. The pressure ports may be used to control pressure across the array.

Pressure port for ultrasonic transducer on CMOS sensor

An ultrasound device is described. The ultrasound device may include a cavity, a membrane, and a sensing electrode. When an electrical signal is applied to the sensing electrode and a static bias is applied to the membrane, the membrane vibrates within the cavity and produces ultrasonic signals. The cavity, the membrane, and the sensing electrode may be considered a capacitive micromachined ultrasonic transducer (CMUT). The sensing electrode may be shaped as a ring, whereby the central portion of the sensing electrode is removed. Removal of the central portion of the sensing electrode may reduce the parasitic capacitance without substantially affecting the production of ultrasonic signals by the CMUT. This, in turn, can result in an increase in the signal-to-noise ratio (SNR) of the ultrasonic signals. The ultrasound device may further include a bond pad configured for wire bonding, and a trench electrically isolating the bond pad from the membrane.

Ultrasound devices

Circuitry for an ultrasound device is described. The ultrasound device may include a symmetric switch positioned between a pulser and an ultrasound transducer. The pulser may produce bipolar pulses. The symmetric switch may selectively isolate a receiver from the pulser and the ultrasound transducer during a transmit mode of the device, when the bipolar pulses are provided by the pulser to the ultrasound transducer for transmission, and may selectively permit the receiver to receive signals from the ultrasound transducer during a receive mode. The symmetric switch may be provided with a well switch to remove well capacitances in a signal path of the device.

Symmetric receiver switch for ultrasound devices

A method of forming an ultrasound transducer device includes bonding a membrane to a substrate so as to form a sealed cavity between the membrane and the substrate. An exposed surface located within the sealed cavity includes a getter material that is electrically isolated from a bottom electrode of the cavity.

Fabrication techniques and structures for gettering materials in ultrasonic transducer cavities

An ultrasonic transducer includes a membrane, a bottom electrode, and a plurality of cavities disposed between the membrane and the bottom electrode, each of the plurality of cavities corresponding to an individual transducer cell. Portions of the bottom electrode corresponding to each individual transducer cell are electrically isolated from one another. Each portion of the bottom electrode corresponds to each individual transducer that cell further includes a first bottom electrode portion and a second bottom electrode portion, the first and second bottom electrode portions electrically isolated from one another.

Microfabricated ultrasonic transducer having individual cells with electrically isolated electrode sections

Aspects of the technology described herein relate to ultrasound circuits that employ a differential ultrasonic transducer element, such as a differential micromachined ultrasonic transducer (MUT) element. The differential ultrasonic transducer element may be coupled to an integrated circuit that is configured to operate the differential ultrasonic transducer element in one or more modes of operation, such as a differential receive mode, a differential transmit mode, a single-ended receive mode, and a single-ended transmit mode.

Differential ultrasonic transducer element for ultrasound devices

Aspects of the technology described herein relate to an ultrasound device including a first die that includes an ultrasonic transducer, a first application-specific integrated circuit (ASIC) that is bonded to the first die and includes a pulser, and a second ASIC in communication with the second ASIC that includes integrated digital receive circuitry. In some embodiments, the first ASIC may be bonded to the second ASIC and the second ASIC may include analog processing circuitry and an analog-to-digital converter. In such embodiments, the second ASIC may include a through-silicon via (TSV) facilitating communication between the first ASIC and the second ASIC. In some embodiments, SERDES circuitry facilitates communication between the first ASIC and the second ASIC and the first ASIC includes analog processing circuitry and an analog-to-digital converter. In some embodiments, the technology node of the first ASIC is different from the technology node of the second ASIC.

Ultrasound apparatuses and methods for fabricating ultrasound devices

Processes for fabricating capacitive micromachined ultrasonic transducers (CMUTs) are described, as are CMUTs of various doping configurations. An insulating layer separating conductive layers of a CMUT may be formed by forming the layer on a lightly doped epitaxial semiconductor layer. Dopants may be diffused from a semiconductor substrate into the epitaxial semiconductor layer, without diffusing into the insulating layer. CMUTs with different configurations of N-type and P-type doping are also described.

Capacitive micromachined ultrasonic transducers (CMUTs) and related apparatus and methods

A digital-to-analog converter (DAC) system includes a DAC and a current trimming module. The DAC includes a plurality of segments and a plurality of drivers. Each of the plurality of segments receives driver signals from a respective one of the plurality of drivers, receives segment currents from a respective one of a plurality of segment current sources, and generates an output current based on the driver signals and the segment currents. The current trimming module stores a plurality of trim coefficients and adjusts respective threshold voltages associated with the plurality of segment current sources based on the plurality of trim coefficients.

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Los Altos, CA, United States of America

Joseph Lutsky