Honeywell G.m.b.h.

Joseph L Schmit

Eric S Johnson

M Walter Scott

Ernest L Stelzer

John E Bowers

Thomas E Nohava

Robert J Hager

Peter H Zimmermann

Maurice L Hitchell

Russell J Camp, Jr

Apparatus for electrically interconnecting a focal plane array component of infrared detectors to a second focal plane array component of electronics, such as multiplexers. First and second interconnecting members are comprised of indium bumps wherein the bumps are of generally rectangular shape and of nonparallel orientation, typically crossing at 90.degree. angles. An alternative embodiment uses bumps of generally round shape wherein one of the bumps is of a smaller surface area than the other.

Electrical interconnection apparatus for achieving precise alignment of

A cadmium telluride boule encapsulated with an encapsulant material consisting of about 80% by volume of powdered beta-phase calcium sulfate hemihydrate, about 20% by volume of powdered alpha-phase calcium sulfate hemihydrate and water. This specially encapsulated boule can then be sawn with a multiblade wafering apparatus used to simultaneously saw the boule into multiple substrate wafers.

Encapsulant of CdTe boules for multiblade wafering

Encapsulated CDTe boules for multiblade wafering

Hg.sub.1-x Cd.sub.x Te is an important semiconductor for use in photovoltaic and photoconductive infrared photon detectors. Hg.sub.1-x Cd.sub.x Te can be grown by liquid phase epitaxy at atmospheric pressure from a Te-rich solution in which case the Hg vapor pressure is below 0.1 atm at 500.degree. C. This low vapor pressure makes possible the use of open-tube, slider growth techniques. The present invention describes a covered graphite slider system which provides an additional source of Hg, minimizes loss of Hg from the source wafer and virtually prevents loss of Hg from the (Hg.sub.1-x Cd.sub.x).sub.1-y Te.sub.y growth solution.

Mercury containment for liquid phase growth of mercury cadmium telluride

A method of growing single crystals of silicon doped with thallium for use as an extrinsic silicon photodetector of 3-5 um infrared radiation which will operate above 77 K.

Growth of thallium-doped silicon from a tin-thallium solution

Mercury cadmium telluride having a quantity of an acceptor material selected from Group VA of the Periodic Table, consisting of nitrogen, phosphorus, arsenic and antimony and bismuth dispersed therein, preferably in an amount sufficient to measurably increase the acceptor concentration of the semiconductor. Most preferred are phosphorus, arsenic and antimony. Also disclosed are junctions formed by two adjacent regions of mercury cadmium telluride in which one of the regions contains an acceptor concentration increasing amount of nitrogen phosphorus, arsenic, bismuth or antimony. A method is disclosed which permits diffusion of these additives into a body of already formed mercury cadmium telluride.

Doping of (Hg,Cd)Te with a Group VA element

Mercury cadmium telluride is disclosed having a quantity of a halogen donor material preferably selected from the group consisting of bromine and iodine dispersed therein in an amount sufficient to measurably increase the donor concentration. Also disclosed are PN junctions formed using this donor material. A method of introducing the donor material is additionally disclosed.

Preparation of halogen doped mercury cadmium telluride

A method of adjusting the donor concentration in a body of mercury cadmium telluride, or in regions of a body, comprising the steps of contacting the donor material region with a donor material of either aluminum or silicon and heating the body at a temperature of at least 550.degree. C for sufficient time to diffuse the donor material into the body. In a preferred embodiment, the heating is done in the presence of a source of mercury vapor pressure other than the body of semiconductor.

Doping mercury cadmium telluride with aluminum or silicon

Halogen-doped Hg,Cd,Te

The stoichiometry and free-carrier concentration of mercury cadmium telluride is adjusted by a heat treatment. Mercury cadmium telluride is heat treated in the presence of mercury and cadmium vapor.

Mercury cadmium telluride annealing procedure

The stoichiometry and free-carrier concentration of mercury cadmium telluride is adjusted by a heat treatment. Mercury cadmium telluride is slowly cooled from a temperature near the solidus temperature to room temperature in the presence of constituent vapor. The mercury cadmium telluride is maintained at the lowest temperature within the capsule during cooling.

Heat treatment of mercury cadmium telluride

Compositional gradients in a body of mercury cadmium telluride are removed by heat treating the mercury cadmium telluride in a closed container at a temperature which is less than the solidus temperature. The constituent vapor pressure within the closed container is maintained at a value which is lower than the equivalent vapor pressure of the constituents of the mercury cadmium telluride body.

Method for reducing compositional gradients in mercury cadmium telluride

A photoconductive detector array is formed in a single body of semiconductor material. The individual photoconductive detectors are formed by regions of first conductivity type. The bulk of the semiconductor body is of a second conductivity type, thereby electrically isolating the individual photoconductive detectors from one another. This detector array is easier to fabricate than prior art detector arrays, and has unique signal enhancement properties.

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Hopkins, MN, United States of America

Joseph L Schmit