Alliance for Sustainable Energy, LLC

Duke University

Swift Solar Inc.

Joseph Jonathan Berry

Kai Zhu

Joseph Matthew Luther

Axel Finn Palmstrom

David Samuel Ginley

Marinus Franciscus Antonius Maria Van Hest

Lance Michael Wheeler

Arrelaine Allen Dameron

Matthew C Beard

Fei Zhang

Tomas Leijtens

Donghoe Kim

David Todd Moore

Jaehong Park

Jeffrey A Christians

Young-Hoon Kim

Calvin J Curtis

Alexander Miedaner

Zeev Valentine Vardeny

Thomas Gennett

Giles Eperon

Dana C Olson

Haipeng Lu

David Brian Mitzi

Chuanxiao Xiao

Philip Schulz

Annalise Elizabeth Maughan

John Perkins

Kelly Robert Schutt

Yaxin Zhai

Volker Wolfgang Blum

K Xerxes Steirer

Jordan P Chesin

Matthew T Lloyd

Sean Phillip Dunfield

Paul Francois Ndione

Nicodemus Edwin Widjonarko

Adewole Philip Schulz

Described herein are spin polarized light emitting diodes (LEDs) and methods of making the same. Spin polarization is achieved via chiral induced spin selectivity where, for example, a stereochemically active cation is included in a perovskite to form the conductive layer of an LED device. Advantageously, the devices and methods described herein allow for spin polarization at room temperature and without application of a magnetic field or ferromagnetic contacts, in contrast to other described spin selective LEDs.

Chiral induced spin selectivity enabling a room temperature spin polarized light emitting diode

The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.

Optoelectronic devices and methods of making the same

An aspect of the present disclosure is a method of making a device, wherein the method includes, in order, depositing a layer of a photoresist onto a substrate, depositing a mask onto the photoresist, developing the photoresist, resulting in the forming of a grid having a plurality of cavities, and depositing a semiconductor onto the grid, resulting in substantially filling each cavity with the semiconductor.

Perovskite-containing scintillators and methods of making the same

The present disclosure relates to a composition that includes a perovskite of ABX, where A includes an R-form of a chiral molecule of at least one of and/or an S-form of the chiral molecule, B includes a cation, X includes an anion, Rincludes a first carbon chain having between 2 and 5 carbon atoms, Rincludes at least one of a hydrogen atom, a halogen atom, a carboxylic acid group, an alkoxy group, and/or a second carbon chain, and Rincludes a third carbon chain.

Two-dimensional perovskite compositions and devices therefrom

The present disclosure relates to devices that include a perovskite, where, when a first condition is met, at least a portion of the perovskite is in a first phase that substantially transmits light, when a second condition is met, at least a portion of the perovskite is in a second phase that substantially absorbs light, and the perovskite is reversibly switchable between the first phase and the second phase by reversibly switching between the first condition and the second condition.

Energy-harvesting chromogenic devices

The present disclosure relates to a composition that includes a first layer that includes a perovskite defined by ABXand a second layer that includes a perovskite-like material defined by at least one of A'B&#x2032;X&#x2032;, A&#x2032;B&#x2032;X&#x2032;, A&#x2032;B&#x2032;X&#x2032;, A&#x2032;B&#x2032;X&#x2032;, and/or A&#x2032;AB&#x2032;X&#x2032;, where the first layer is adjacent to the second layer, A is a first cation, B is a second cation, X is a first anion, A&#x2032; is a third cation, B&#x2032; is a fourth cation, X&#x2032; is a second anion, and A&#x2032; is different than A.

Compositions and methods for stabilizing perovskite interfaces

An aspect of the present disclosure is a method that includes combining a first organic salt (AX), a first metal salt (M(X)), a second organic salt (AX), a second metal salt (MCl), and a solvent to form a primary solution, where AXand M(X)are present in the primary solution at a first ratio between about 0.5 to 1.0 and about 1.5 to 1.0, and AXto MClare present in the primary solution at a second ratio between about 2.0 to 1.0 and about 4.0 to 1.0. In some embodiments of the present disclosure, at least one of Aor Amay include at least one of an alkyl ammonium, an alkyl diamine, cesium, and/or rubidium.

Oriented perovskite crystals and methods of making the same

The present disclosure relates to a method that includes applying a first perovskite precursor solution to a substrate to form a first liquid film of the first perovskite precursor solution on the substrate; from the first liquid film, forming a first intermediate solid perovskite layer on the substrate; repeating at least once, both the applying and the forming, resulting in the creation of at least one additional intermediate solid perovskite layer; and treating a last intermediate solid perovskite layer, resulting from the at least one additional applying and the at least one additional forming, to create a final solid perovskite layer.

Methods for producing perovskite-containing devices

The present disclosure relates to a method that includes positioning a stack that includes at least one of the following layers between a first surface and a second surface: a first perovskite layer and/or a second perovskite layer; and treating the stack for a period of time by at least one of heating the stack or pressurizing the stack, where a device that includes the first surface and the second surface provides the heating and the pressurizing of the stack.

Perovskite-containing devices and methods of making the same

The present application discloses devices that include a perovskite layer, a first layer that includes an oxide, and an interface layer, where the interface layer is positioned between the first layer and the perovskite layer, the interface layer is in physical contact with both the first layer and the perovskite layer, and the interface layer consists essentially of the oxide.

Oxide layers and methods of making the same

An aspect of the present disclosures is a method that includes applying a perovskite precursor solution to a first solid conductor and treating the perovskite precursor solution such that a first portion of the perovskite precursor solution is converted to a first solid perovskite, where the first solid conductor comprises a first charge transport characteristic, which is predominantly p-type or predominantly n-type, and the treating results in the first solid perovskite having a second charge transport characteristic that is substantially the same as the first charge transport characteristic.

Heterojunction perovskite photovoltaic devices and methods of making the same

A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

Growing community of inventors

Boulder, CO, United States of America

Joseph Jonathan Berry