General Electric Company

First Solar, Inc.

Lumination LLC

Boe Technology Group Co., Ltd.

Ge Lighting Solutions LLC

Joseph John Shiang

James Anthony Cella

Anil Raj Duggal

William Hullinger Huber

Kelly Scott Chichak

Yong Liang

Kyle Erik Litz

Jie Jerry Liu

Qing Ye

Alok Mani Srivastava

Larry Neil Lewis

Anant Achyut Setlur

Holly Ann Comanzo

Paul Michael Smigelski, Jr

Guanghua Wang

Mark Allen Cheverton

Gang Xiong

Stanton Earl Weaver, Jr

Marc Schaepkens

Aaron Judy Couture

Prabhjot Singh

Patrick Joseph McCloskey

George E Possin

Lionel M Levinson

Thomas Frederick Soules

Jongwoo Choi

Holly Ann Blaydes

Kristian William Andreini

Eugene Thomas Hinners

Adam Fraser Halverson

Gautam Parthasarathy

Christian Maria Anton Heller

Kevin Henry Janora

Elliott West Shanklin

Arunkumar Natarajan

Charles Adrian Becker

Sergei Kniajanski

Larry Gene Turner

Hongbo Cao

Sachit Grover

Xiaoping Li

Roger Malik

Hongying Peng

Paul Michael Smigelski

Dingyuan Lu

Qianqian Xin

Jeffrey Joseph Popielarczyk

Victor Petrovich Ostroverkhov

Douglas Albagli

Donald Franklin Foust

Steven Jude Duclos

Joseph Darryl Michael

Matthew David Butts

William Andrew Hennessy

Richard Louis Hart

Emil Vergilov Radkov

Thomas Francis McNulty

Srinivas Prasad Sista

Kent Charles Burr

Aharon Yakimov

William Francis Nealon

Jacob Charles Bortscheller

David Andrew Simon

Chen-Lun Hsing Chen

Cherian Jacob

Stanton Weaver

Jie Liu

Charles A Becker

Steven Duclos

A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.

Photovoltaic devices and method of making

According to the embodiments provided herein, a photovoltaic device can include an absorber layer. The absorber layer can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4×10cm. The absorber layer can include oxygen in a central region of the absorber layer. The absorber layer can include an alkali metal in the central region of the absorber layer. Methods for carrier activation can include exposing an absorber layer to an annealing compound in a reducing environment. The annealing compound can include cadmium chloride and an alkali metal chloride.

Photovoltaic devices and semiconductor layers with group v dopants and methods for forming the same

Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.

A photovoltaic device () can include an absorber layer (). The absorber layer () can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4&#xd7;10cm. The absorber layer () can include oxygen in a central region of the absorber layer (). The absorber layer () can include an alkali metal in the central region of the absorber layer (). Methods for carrier activation can include exposing an absorber layer () to an annealing compound in a reducing environment (). The annealing compound () can include cadmium chloride and an alkali metal chloride.

Photovoltaic devices and semiconductor layers with group V dopants and methods for forming the same

An electrochemical cell includes a bifunctional air cathode, an anode, and a ceramic electrolyte separator disposed substantially between the bifunctional air cathode and the anode. The anode includes a solid metal and an electrolyte configured to transition to a liquid phase in an operating temperature range. The electrolyte includes at least one of an alkali oxide, boron oxide, a carbonate, a phosphate, and a group III-X transition metal oxide.

Electrochemical cell for use in high temperature metal-air battery

A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer includes selenium, and an atomic concentration of selenium varies non-linearly across a thickness of the absorber layer. A method of making a photovoltaic device is also presented.

A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer includes cadmium, tellurium, and selenium. A semiconductor layer is further disposed on the absorber layer, wherein a valence band offset between the semiconductor layer and the absorber layer is less than about 1.3 electron Volts, and a band gap of the semiconductor layer is in a range from about 1.2 electron Volts to about 3.5 electron Volts.

Photovoltaic devices

Optoelectronic devices with enhanced internal outcoupling include a substrate, an anode, a cathode, an electroluminescent layer, and electron transporting layer comprising a fluoro compound of formula I(Ar)&#x2014;Ar&#x2014;(Ar)&#x2003;&#x2003;Iwherein

OLED devices with internal outcoupling

A system and method for monitoring system including a embedded sensor coupled to an article, wherein the embedded sensor is a direct write embedded sensor using a high temperature light emitting material. A camera system detects illumination signals from the embedded sensors. A processing section processes the illumination signals and determines gas/surface temperatures and strain data for the article.

Method and system for multi-functional embedded sensors

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Niskayuna, NY, United States of America

Joseph John Shiang