Texas Instruments Corporation

Joseph Jian Song

Bhaskar Srinivasan

Qi-Zhong Hong

Gregory Boyd Shinn

An electronic device includes a semiconductor die having a multilevel metallization structure including stacked levels with respective dielectric layers and metal lines, and a low leakage, low hydrogen diffusion barrier layer on one of the stacked levels. The diffusion barrier layer contacts a side of the dielectric layer and the metal line of the one of the stacked levels, and the diffusion barrier layer includes silicon nitride material having a first bond percentage ratio of ammonia to silicon nitride that is greater than a second bond percentage ratio of silicon hydride to silicon nitride.

Growing community of inventors

Plano, TX, United States of America

Joseph Jian Song