Gsi Group Corporation

Electro Scientific Industries, Inc.

Gsi Lumonics Corporation

Joseph J Griffiths

Donald Victor Smart

James J Cordingley

Jonathan S Ehrmann

Donald J Svetkoff

Joohan Lee

Shepard D Johnson

Bo Gu

Michael Plotkin

Kurt A Pelsue

Roger Dowd

A method and system for adaptively controlling a laser-based material processing process are provided. The system includes sensing equipment to measure a process variable or condition of at least one of a laser-based material processing system and a workpiece processed by the material processing system and to provide a corresponding measurement signal. The control system also includes a signal processor for processing the measurement signal to obtain a processed signal which initiates, at least semi-automatically, an action associated with at least one of the material processing system and the workpiece. A method and system for at least semi-automatically qualifying a laser-based material processing system which delivers laser energy to locations on or adjacent a plurality of microstructures formed on a workpiece to at least partially process the microstructures are also provided.

Method and system for adaptively controlling a laser-based material processing process and method and system for qualifying same

A laser system for processing conductive link structures includes a seed laser generating a seed laser beam. The seed laser is sliced by a modulator into a user configurable series of pulses and the pulses are optically amplified and applied to a conductive link structure. Preferably, the bandwidth of the seed laser is less than 1 nm with an IR center frequency, and the frequency of the laser light of the pulses is doubled or quadrupled prior to application to the conductive structure. Preferably, the pulses are about 1-18 nanosecond pulsewidth and are separated by 100-400 nanoseconds.

Laser processing of conductive links

The present invention relates to the field of laser processing methods and systems, and specifically, to laser processing methods and systems for laser processing multi-material devices. Systems and methods may utilize high speed deflectors to improve processing energy window and/or improve processing speed. In some embodiments, a deflector is used for non-orthogonal scanning of beam spots. In some embodiment, a deflector is used to implement non-synchronous processing of target structures.

Link processing with high speed beam deflection

A method and system for locally processing a predetermined microstructure formed on a substrate without causing undesirable changes in electrical or physical characteristics of the substrate or other structures formed on the substrate are provided. The method includes providing information based on a model of laser pulse interactions with the predetermined microstructure, the substrate and the other structures. At least one characteristic of at least one pulse is determined based on the information. A pulsed laser beam is generated including the at least one pulse. The method further includes irradiating the at least one pulse having the at least one determined characteristic into a spot on the predetermined microstructure. The at least one determined characteristic and other characteristics of the at least one pulse are sufficient to locally process the predetermined microstructure without causing the undesirable changes.

Methods and systems for precisely relatively positioning a waist of a pulsed laser beam and method and system for controlling energy delivered to a target structure

A laser system for processing conductive link structures includes a seed laser generating a seed laser beam. The seed laser is sliced by a modulator into a user configurable series of pulses and the pulses are optically amplified and applied to a conductive link structure. Preferably, the bandwidth of the seed laser is less than 1 nm with an IR center frequency, and the frequency of the laser light of the pulses is doubled or quadrupled prior to application to the conductive structure. Preferably, the pulses are about 1-18 second pulsewidth and are separated by 100-400 ns.

Methods and systems for thermal-based laser processing a multi-material device

Methods and systems for processing a device, methods and systems for modeling same and the device

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Winthrop, MA, United States of America

Joseph J Griffiths