Lam Research Corporation

Joseph Hung-chi Wei

Bart Jan Van Schravendijk

Bhadri N Varadarajan

Akhil N Singhal

Ananda K Banerji

Kevin M McLaughlin

Casey Holder

Methods and apparatuses suitable for encapsulation layers for memory devices at temperatures less than about 300&#xb0; C. are provided herein. Methods involve introducing a reactive species by pulsing plasma while exposing a substrate to deposition reactants, and post-treating deposited encapsulation films to densify and reduce hydrogen content. Post-treatment methods include periodic exposure to inert plasma without reactants and exposure to ultraviolet radiation at a substrate temperature less than about 300&#xb0; C.

Methods of encapsulation

Methods and apparatuses suitable for depositing low hydrogen content, hermetic, thin encapsulation layers at temperatures less than about 300&#xb0; C. are provided herein. Methods involve pulsing plasma while exposing a substrate to deposition reactants, and post-treating deposited encapsulation films to densify and reduce hydrogen content. Post-treatment methods include periodic exposure to inert plasma without reactants and exposure to ultraviolet radiation at a substrate temperature less than about 300&#xb0; C.

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Portland, OR, United States of America

Joseph Hung-chi Wei