Quantumscape Corporation

Intel Corporation

Quantrumscape Corporation

Quantumscape Battery, Inc.

Joseph Han

Adrien Lavoie

Rainer Johannes Fasching

Harsono S Simka

Juan E Dominguez

John J Plombon

Weston Arthur Hermann

Timothy P Holme

Cheng Chieh Chao

Tim Holme

Bradley Owen Stimson

Jagdeep Singh

Friedrich B Prinz

Karl M Brown

Mark L Doczy

Valery M Dubin

Ghyrn E Loveness

Eric Tulsky

Jon Shan

Bryan Clark Hendrix

Zhebo Chen

Adrian Winoto

Will Hudson

Gregory T Stauf

Marie A Mayer

David Michael Thompson

John D Peck

Ken Desmond

Anna Choi

Phil Reilly

Bradley O Stimson

Battery systems using coated conversion materials as the active material in battery cathodes are provided herein. Protective coatings may be an oxide, phosphate, or fluoride, and may be lithiated. The coating may selectively isolate the conversion material from the electrolyte. Methods for fabricating batteries and battery systems with coated conversion material are also provided herein.

Protective coatings for conversion material cathodes

Provided are negative electrode assemblies containing lithium sulfide anolyte layers, electrochemical cells including these assemblies, and methods of forming thereof. An anolyte layer may be disposed over a metal layer of a current collector and may be used to separate the current collector from the rest of the electrolyte. The metal layer may include copper or any other suitable metal that forms in situ a metal sulfide during fabrication of the electrode assembly. Specifically, a sulfur containing layer, such as a solid electrolyte, is formed on the metal layer. Sulfur from this layer reacts with the metal of the current collector and forms a metal sulfide layer. When lithium is later added to the metal sulfide layer, a lithium sulfide anolyte layer is formed while the metal layer is recovered. Most, if not all operations may, be performed in situ during fabrication of electrochemical cells.

Metal sulfide anolytes for electrochemical cells

Solid state energy storage systems and devices are provided. A solid state energy storage devices can include an active layer disposed between conductive electrodes, the active layer having one or more quantum confinement species (QCS), such as quantum dots, quantum particles, quantum wells, nanoparticles, nanostructures, nanowires and nanofibers. The solid state energy storage device can have a charge rate of at least about 500 V/s and an energy storage density of at least about 150 Whr/kg.

Solid state energy storage devices

The present invention is related to formation and processing of antiperovskite material. In various embodiments, a thin film of aluminum doped antiperovskite is deposited on a substrate, which can be an electrolyte material of a lithium-based electrochemical storage device.

Method for forming and processing antiperovskite material doped with aluminum material

The present invention is directed to electrochemical devices and materials thereof. More specifically, embodiments set forth herein provide a low-porosity electrode that includes large particles and small particles. The large particles include electrochemically active material. The small particles include ion conductive electrolyte materials. In some examples, the large particles and small particles are characterized by a dispersity of no higher than 0.5. There are other embodiments as well.

Electrode materials with mixed particle sizes

Provided herein are energy storage device cathodes with high capacity electrochemically active material including compounds that include iron, fluorine, sulfur, and optionally oxygen. Batteries with active materials including a compound of the formula FeFSOexhibit high capacity, high specific energy, high average discharge voltage, and low hysteresis, even when discharged at high rates. Iron, fluorine, and sulfur-containing compounds may be ionically and electronically conductive.

Iron, fluorine, sulfur compounds for battery cell cathodes

The disclosure is related to battery systems. More specifically, embodiments of the disclosure provide a nanostructured conversion material for use as the active material in battery cathodes. In an implementation, a nanostructured conversion material is a glassy material and includes a metal material, one or more oxidizing species, and a reducing cation species mixed at a scale of less than 1 nm. The glassy conversion material is substantially homogeneous within a volume of 1000 nm.

Nanostructured materials for electrochemical conversion reactions

Described in this patent application are devices for energy storage and methods of making and using such devices. In various embodiments, blocking layers are provided between dielectric material and the electrodes of an energy storage device. The block layers are characterized by higher dielectric constant than the dielectric material. There are other embodiments as well.

Incompatible materials, such as copper and nitrided barrier layers, may be adhered more effectively to one another. In one embodiment, a precursor of copper is deposited on the nitrided barrier. The precursor is then converted, through the application of energy, to copper which could not have been as effectively adhered to the barrier in the first place.

Using unstable nitrides to form semiconductor structures

Described herein are metal gate electrode stacks including a low resistance metal cap in contact with a metal carbonitride diffusion barrier layer, wherein the metal carbonitride diffusion barrier layer is tuned to a particular work function to also serve as a work function metal for a pMOS transistor. In an embodiment, the work function-tuned metal carbonitride diffusion barrier prohibits a low resistance metal cap layer of the gate electrode stack from migrating into the MOS junction. In a further embodiment of the present invention, the work function of the metal carbonitride barrier film is modulated to be p-type with a pre-selected work function by altering a nitrogen concentration in the film.

Tunable gate electrode work function material for transistor applications

Growing community of inventors

Redwood City, CA, United States of America

Joseph Han