Sarnoff Corporation

David Sarnoff Research Center, Inc.

Sri International

Bell Communications Research, Inc.

Princeton Lightwave, Inc.

Trumpf Photonics, Inc.

US Government As Represented by the Secretary of the Army

The State University of New York

Joseph H Abeles

Alan Michael Braun

John Charles Connolly

Martin Kwakernaak

Winston Kong Chan

Viktor Borisovitch Khalfin

Ralph Doud Whaley, Jr

Peter John Zanzucchi

Hooman Mohseni

Sterling Eduard McBride

Dmitri Z Garbuzov

Steven A Lipp

Timothy James Davis

William Edward Stephens

Arye Rosen

Alexander Kastalsky

Serge Luryi

Arthur C Paolella

Robert Amantea

Ramon Ubaldo Martinelli

Peter R Herczfeld

Liyou Yang

Raymond Louis Camisa

Raymond Joseph Menna

Robert J Deri

Giora Griffel

John P Riganati

Haiyan An

Nagendranath Maley

Zane Alan Shellenbarger

Nancy A Morris

Robert F Leheny

The present disclosure relates to a diode laser and a method for producing the same. In one embodiment, the diode laser, comprises a passive pedestal layer structure, an active ridge layer structure positioned over the passive pedestal layer structure, a p-contact contacting a top side of the active ridge layer structure, a first n-contact disposed on a first side of the active ridge layer structure, a second n-contact disposed on a second side of the active ridge layer structure and, an n-final-metal layer connecting the first n-contact metal and the second n-contact metal, wherein the n-final-metal layer is continuous over the active ridge layer structure.

Single ridge N-P-N diode laser

An article comprising a slab generating scintillation light in response to ionization event and formed with at least two sides. The ionization event is resulted from interaction of high-energy particles within a material of the slab between these sides. A photoreceiver sensitive to the scintillation light is integrated on each side of the slab in an optically-tight fashion. An arrangement is provided for analyzing signals resulted from the ionization event and generated by the photoreceivers. The photoreceivers and the analyzing arrangement are adapted for extracting a position of the ionization event within the slab material relative to the slab sides. A correcting arrangement is provided for correcting the signals and to provide attenuation of the scintillation light.

Slab scintillator with integrated double-sided photoreceiver

A chip scale atomic clock is disclosed that provides a low power atomic time/frequency reference that employs direct RF-interrogation on an end-state transition. The atomic time/frequency reference includes an alkali vapor cell containing alkali atoms, preferably cesium atoms, flex circuits for physically supporting, heating, and thermally isolating the alkali vapor cell, a laser source for pumping alkali atoms within the alkali vapor cell into an end resonance state by applying an optical signal along a first axis, a photodetector for detecting a second optical signal emanating from the alkali vapor cell along the first axis, a pair of RF excitation coils for applying an RF-interrogation signal to the alkali atoms along a second axis perpendicular to the first axis, a pair of bias coils for applying a uniform DC magnetic field along the first axis, and a pair of Zeeman coils for applying a Zeeman interrogation signal to the alkali atoms and oriented and configured to apply a time-varying magnetic field along the second axis through the alkali vapor cell. Another flex circuit is used for physically supporting the laser source, for heating the laser source, and for providing thermal isolation of the laser source. The laser source can be a vertical cavity surface emitting laser (VSCEL). The bias coils can be Helmholtz coils.

Batch-fabricated, RF-interrogated, end transition, chip-scale atomic clock

A semiconductor laser diode having increased efficiency and therefore increased power output. The laser diode includes a body of a semiconductor material having therein a waveguide region which is not intentionally doped so as to have a doping level of no greater than about 5&#xd7;10/cm. Within the waveguide region is means, such as at least one quantum well region, for generating an optical mode of photons. Clad regions of opposite conductivity type are on opposite sides of the waveguide region. The thickness of the waveguide region, a thickness of at least 500 nanometers, and the composition of the waveguide and the clad regions are such so as to provide confinement of the optical mode in the waveguide region to the extent that the optical mode generating does not overlap into the clad regions from the waveguide region more than about 5%.

High power semiconductor laser diode

A high power laser system including: a plurality of emitters each including a large area waveguide and a plurality of quantum well regions optically coupled to the large area waveguide, wherein each of the quantum well regions exhibits a low modal overlap with the large area waveguide; a collimator optically coupled to the emitters; a diffraction grating optically coupled through the collimator to the emitters; and, an output coupler optically coupled through the diffraction grating to the emitters.

High power diode laser based source

A cell suitable for use with an atomic clock and a method for making the same, the cell including: a silicon wafer having a recess formed therein; at least one amorphous silicate member having an ion mobility and temperature expansion coefficient approximately that of silicon sealing the recess; and, an alkali metal containing component and buffer gas contained in the recess. The method includes: providing a silicon wafer; forming a cavity through the silicon wafer; introducing an alkali metal containing component and buffer gas into the cavity; and, anodically bonding at least one amorphous silicate member having an ion mobility and temperature expansion coefficient approximately that of silicon to the wafer to close the cavity.

Anodically bonded cell, method for making same and systems incorporating same

A monolithic light amplification system including: an un-doped waveguide; a ridge waveguide positioned over the un-doped waveguide; and, at least a doped layer between the un-doped waveguide and ridge waveguide; wherein, the un-doped waveguide and ridge waveguide cooperate to amplify light input to the un-doped waveguide.

Vertically coupled large area amplifier

A low-jitter optical pulse source including: a monolithic waveguide including a first section substantially perpendicular to a first facet and a second section being curved and substantially non-perpendicular to a second facet; and, an optical circulator coupled to the monolithic waveguide and forming a sigma cavity in combination with the monolithic waveguide, wherein the first facet forms a sole reflector for the sigma cavity.

Compact, high-power, low-jitter, semiconductor modelocked laser module

An RF-photonics integrated communications module including: a plurality of RF input channels; a plurality of modulators each being responsive to one of the RF input channels; and, a plurality of photonic output channels coupled to the modulators via a switching network. The switching network includes a plurality of resonating elements coupled between the modulators and the output channels to selectively apply outputs of the modulators to the output channels.

Channelizer switch

An optical system including: a substrate having a recess; and, a substantially planar, semiconductor waveguiding membrane suspended over the recess and having a thickness less than about 200 nm; wherein, the optical system supports a propagating optical mode having a majority of its energy external to the semiconductor waveguiding membrane.

Low optical overlap mode (LOOM) waveguiding system and method of making same

A photonic device suitable for being optically coupled to at least one optical fiber having a first spot-size, the device including: at least one photonic component; and, a graded index lens optically coupled between the at least one photonic component and the at least one optical fiber; wherein, the graded index lens is adapted to convert optical transmissions from the at least one photonic component to the first spot size.

Amorphous silicon alloy based integrated spot-size converter

A distributed feedback ridge waveguide semiconductor laser diode having a waveguide region with a typical thickness of at least 500 nanometers and an effective refractive index difference between the ridge structure and exposed portions of the waveguide region which surround the ridge structure of less than 0.001. This permits the width of the ridge to be expanded beyond 3.5 microns thus translating directly to higher power outputs at 1.55 &mgr;m wavelengths, where carrier diffusion and carrier heating limit current density injected into the active region.

High power distributed feedback ridge waveguide laser

A modulator including: a plurality of branches; first and second RF electrodes; a first plurality of RF delay elements coupled to the first RF electrode and a second plurality of RF delay elements coupled to the second electrode; and, a plurality of electro-refractive resonant elements. Each of the electro-refractive resonant elements is respectively coupled to a corresponding one of the RF delay elements and evanescently coupled to at least one of the branches.

Resonant enhanced modulator (REM)

One embodiment of the present invention is an exemplary wavelength selective optical coupling device. This exemplary device includes two waveguides, a ring or disc resonator, and resonator coupling elements. The waveguides are disposed on top of a substrate, not in contact with each other. The waveguides may transmit multiple wavelengths of light. The ring or disc resonator includes a dielectric member which extends parallel to the top of the substrate and overlaps, without contacting, the waveguides. The resonator is sized to resonate at a subset of resonant wavelengths. The resonator coupling elements couple the resonator to the substrate. The resonator coupling elements may include a bridge coupled to the top surface of the substrate and electrically coupled to control circuitry within the substrate. A waveguide coupling signal from the control circuitry causes the bridge to deform, translating the resonator up and down, thereby intermittently coupling and decoupling the waveguides.

Growing community of inventors

East Brunswick, NJ, United States of America

Joseph H Abeles