U.S. Philips Corporation

Joseph G Van Lierop

Jan Haisma

Gerrit Oversluizen

Gijsbertus A Spierings

Reinhard Kersten

Hanns Ernst Fischer

Horst Horster

Albert Huizing

Marcus J Van Bommel

Anne-Marie A Van Dongen

Hans De Beurs

Emmanuel W J L Oomen

Willy J Felder

Arnoldus B Bogemann

Nijnke A M Verhaegh

Hendrik F Van Den Berg

Ingrid Jm Snijkers-Hendrickx

The display screen,of a cathode ray tube is provided with a filtering layer consisting of silicon dioxide, an oxide of Ge, Zr, Al or Ti and a black dye. The filtering layer obtained may be mirror bright, is resistant to light and to customary cleaning liquids.

Method of manufacturing a filtering layer of silicon dioxide on a display screen

A semiconductor device comprising a silicon substrate is provided with semiconductor elements on a first side, a metallization with connection pads for external contact, and a passivation layer which leaves the connection pads of the metallization exposed. The integrated circuit thus formed is also provided with a ceramic security coating having a matrix of monoaluminium phosphate which also leaves the connection pads of the metallization exposed. The protective layer can be deposited so as to have a thickness in the range from 2 to 10 &mgr;m, and hence is suitable for protecting integrated circuits used in smart cards. As a result, the information stored therein is not accessible.

Semiconductor device comprising an integrated circuit provided with a ceramic security coating and method of manufacturing such a device

The invention relates to an iron having a metal soleplate, which is provided with an anti-friction layer containing an inorganic polymer. To improve the scratch resistance of the anti-friction layer, a hard intermediate layer is provided between the predominantly aluminum part of the soleplate facing the anti-friction layer and the anti-friction layer. This intermediate layer is preferably composed of aluminum oxide which is provided by means of an electrochemical treatment. The use of polymerized alkyl trialkoxysilane, in particular methyl trimethoxysilane, in the anti-friction layer makes it possible to obtain layers which are thicker and hence more scratch-resistant. In such layers, oxidic nano-particles and inorganic color pigments may be incorporated, which cause a further increase of the scratch resistance.

Iron and soleplate for an iron

A method is set forth of bonding together two bodies (1, 2), according to which a first body (1) is provided with a flat surface (5) and the second body (2) is provided with a silicon oxide layer (4) with a flat surface (6), after which a connecting layer (7) containing boron is provided on at least one of the two flat surfaces. Subsequently, the two bodies (1, 2) are pressed together at elevated temperature, so that a borosilicate glass layer is formed. According to the invention, a layer of practically pure boron is used by way of connecting layer (7). Among the advantages of this is that the composition of the borosilicate glass layer is exclusively determined by the previously chosen layer thicknesses.

Method of bonding together two bodies with silicon oxide and practically

In a gas discharge lamp having a discharge vessel containing an ionizable gas filling and consisting of a translucent material, which is surrounded at a certain distance by a translucent outer bulb, the discharge vessel has a thermally insulating translucent envelope of a microporous aerogel.

Gas discharge lamp with microporous aerogel

Monolithic glass members are prepared by first hydrolyzing a solution of tetraethoxysilane in alcohol with an acid medium, and then gelating in a basic medium while using acid and base mediums to form compounds that volatilize during drying and sintering the gel. Substances, if any, which in the form of oxides can form a glass with SiO.sub.2, are added after hydrolyzing and prior to gelation.

Method of manufacturing monolithic glass members

Luminescent quartz glass comprising as a glass matrix oxide mainly SiO.sub.2 and furthermore per mole of SiO.sub.2 from 0 to 0.15 mol of at least one of the oxides Al.sub.2 O.sub.3, B.sub.2 O.sub.3, P.sub.2 O.sub.5, ZrO.sub.2, Sc.sub.2 O.sub.3, Y.sub.2 O.sub.3, La.sub.2 O.sub.3, Gd.sub.2 O.sub.3, Lu.sub.2 O.sub.3, the alkali metal oxides and the alkaline earth metal oxides. The glass comprises as an activator oxide at least one of the oxides Tb.sub.2 O.sub.3 and Ce.sub.2 O.sub.3 in a quantity of 0.75 to 15 mol % calculated with respect to the glass matrix oxides. In one embodiment the glass comprises Tb.sub.2 O.sub.3 and also not more than 0.2 mol % of Eu.sub.2 O.sub.3 as an activator oxide. The glasses are preferably obtained by a sol-gel technique and are useful, for example, in luminescent screen of low-pressure mercury vapor discharge lamps.

Luminescent quartz glass, method of preparing such a glass and

A method of manufacturing semiconductor devices having one or more insulated gate field effect transistors in which a sunken oxide layer is obtained by local oxidation. In those cases in which above a doped zone a thin insulating layer is necessary, for example because said layer forms the dielectric of a capacitor, the invention provides a simplification of the manufacture in that at area in question a thicker sunken oxide layer is first provided which is removed fully or partly in a later stage so as to be able to obtain the desired thinner layer.

Growing community of inventors

Eindhoven, Netherlands

Joseph G Van Lierop