Applied Materials, Inc.

Quantum Global Technologies LLC

Varian Semiconductor Equipment Associates, Inc.

Joseph Frederick Sommers

Joseph Frederick Behnke

Timothy Joseph Franklin

Vahid Firouzdor

Anwar Husain

Christopher L Beaudry

Xue Chang

Sumit Agarwal

Hyun-Ho Doh

Alexander Sulyman

Jiansheng Wang

Yukari Nishimura

Rajan Balesan

Sio On Lo

Ronald Trahan

Satyanarayana Adamala

David Do

Morgan Evans

Wendell Glenn Boyd, Jr

Richard John Hertel

Samantha S H Tan

Christopher W Campbell

Tyler Burton Rockwell

Ernest Everett Allen

Anthony Vesci

Jianqi Wang

William Ming-ye Lu

Anbei Jiang

Jennifer Watia Tiller

Marc O'Donnell Schweitzer

William M Lu

Liyuan Bao

Scott Dickerson

Stephen Abney

William Ming-Ye Lu

Porous plugs for gas delivery in substrate supports and substrate supports and substrate processing chambers incorporating same are provided herein. In some embodiments, a porous plug for use in a substrate support includes: a porous central passageway; and a solid outer shell bonded to and surrounding the porous central passageway such that there is no continuous gap between the porous central passageway and the solid outer shell along an entire length of the porous plug, wherein the solid outer shell includes sealing surfaces disposed on ends of the solid outer shell to facilitate forming a seal along the sealing surface and surrounding the porous central passageway. In some embodiments, one or more o-ring retaining grooves can be formed about the outer surface of the solid outer shell.

Porous plug for electrostatic chuck gas delivery

A method includes depositing a first layer of a first material onto a surface of a chamber component of a processing chamber. The first material comprises a polymer, the polymer having a dielectric strength of at least 40 MV/m. The method further includes depositing a second layer of a second material onto the first layer. The second material comprises a first ceramic material impregnated into the first polymer or a second polymer. The method further includes depositing a third layer. The third layer is of a third material. The third material includes the first ceramic material or a second ceramic material. The third material does not adhere to the first polymer or the second polymer. The third material does adhere to the first ceramic material or the second ceramic material of the second layer.

Plasma resistant arc preventative coatings for manufacturing equipment components

Described herein is a protective coating composition that provides erosion and corrosion resistance to a coated article (such as a chamber component) upon the article's exposure to harsh chemical environment (such as hydrogen based and/or halogen based environment) and/or upon the article's exposure to high energy plasma. Also described herein is a method of coating an article with the protective coating using electronic beam ion assisted deposition, physical vapor deposition, or plasma spray. Also described herein is a method of processing wafer, which method exhibits, on average, less than about 5 yttrium based particle defects per wafer.

Yttrium oxide based coating composition

Exemplary methods of cooling a semiconductor component substrate may include heating the semiconductor component substrate to a temperature of greater than or about 500° C. in a chamber. The semiconductor component substrate may be or include aluminum. The methods may include delivering a gas into the chamber. The gas may be characterized by a temperature below or about 100° C. The methods may include cooling the semiconductor component substrate to a temperature below or about 200° C. in a first time period of less than or about 1 minute.

Gas quench for diffusion bonding

Embodiments of a method of forming one or more holes in a substrate for use as a process chamber component are provided herein. In some embodiments, a method of forming one or more holes in a substrate for use as a process chamber component include forming the one or more holes in the substrate with one or more laser drills using at least one of a percussion drilling, a trepanning, or an ablation process, wherein each of the one or more holes have an aspect ratio of about 1:1 to about 50:1, and wherein the substrate is a component for gas delivery or fluid delivery.

Methods to fabricate chamber component holes using laser drilling

A system for implanting ions into a workpiece while minimizing the generation of particles is disclosed. The system includes an ion source having an extraction plate with an extraction aperture. The extraction plate is electrically biased and may also be coated with a dielectric material. The workpiece is disposed on a platen and surrounded by an electrically biased shield. The shield may also be coated with a dielectric material. In operation, a pulsed DC voltage is applied to the shield and the platen, and ions are attracted from the ion source during this pulse. Since a pulsed voltage is used, the impedance of the thin dielectric coating is reduced, allowing the system to function properly.

Low particle capacitively coupled components for workpiece processing

A processing chamber component and method for fabricating the same are provided. The processing chamber component is fabricated in the manner described herein and includes the creation of at least a macro texture on a surface of the chamber component. The macro texture is defined by a plurality of engineered features arranged in a predefined orientation on the surface of the chamber component. In some embodiments, the engineered features prevent formation of a line of sight surface defined between the features to enhance retention of films deposited on the chamber component.

Geometries and patterns for surface texturing to increase deposition retention

The present invention generally relates to a refurbished electrostatic chuck and a method of refurbishing a used electrostatic chuck. Initially, a predetermined amount of dielectric material is removed from the used electrostatic chuck to leave a base surface. Then, the base surface is roughened to enhance the adherence of new dielectric material thereto. The new dielectric material is then sprayed onto the roughened surface. A mask is then placed over the new dielectric material to aid in the formation of mesas upon which a substrate will sit during processing. A portion of the new dielectric layer is then removed to form new mesas. After removing the mask, edges of the mesas may be smoothed and the refurbished electrostatic chuck is ready to return to service after cleaning.

Electrostatic chuck AlN dielectric repair

Embodiments of the present invention generally relate to a method and apparatus for ex-situ cleaning of a chamber component part. In one embodiment, a system for cleaning component parts in a cleaning chemistry is provided. The system comprises a wet bench set-up comprising a cleaning vessel assembly for holding one or more component parts to be cleaned during a cleaning process and a detachable cleaning cart detachably coupled with the cleaning vessel assembly for supplying one or more cleaning chemistries to the cleaning vessel assembly during the cleaning process.

Method and apparatus for showerhead cleaning

Non-metallic deposits are selectively removed from aluminum containing substrates such as aluminum faceplates using a selective deposition removal (SDR) solution. The SDR solution does not substantially etch the faceplate holes, thereby preserving the hole diameter integrity and increasing the number of times the faceplate may be cleaned or refurbished while remaining within processing hole diameter tolerances. In an embodiment, the SDR solution comprises, in wt % of the solution, 15.5%+/&#x2212;2% HF or buffered HF acid, 3.8%+/&#x2212;0.5% NHF pH buffer, 59.7%+/&#x2212;5% ethylene glycol, and the balance HO.

Non destructive selective deposition removal of non-metallic deposits from aluminum containing substrates

A method of fabricating a component for a substrate processing chamber involves providing a preform having internal and external surfaces, and providing a mandrel having a textured surface with a pattern of textured features comprising protrusions and depressions. The internal surface of the preform component is contacted with the textured surface of mandrel, and a pressure is applied to the external surface of the preform. The pressure is sufficiently high to plastically deform the preform over the textured surface of the mandrel to form a component having a textured internal surface comprising the pattern of textured feature that are shaped and sized to adhere process residues generated in the processing of substrates.

Flow-formed chamber component having a textured surface

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San Jose, CA, United States of America

Joseph Frederick Sommers