Corning Incorporated

Other

Joseph Frank Mach

Kishor Purushottam Gadkaree

James Gregory Couillard

John L Stempin

Evelyn M Deliso

Kevin P Streicher

Steven Alvin Tietje

Yuming Xie

Jiangwei Feng

Michael John Moore

Yanxia Ann Lu

Christopher John Warren

Mark Andrew Stocker

Rengan Kannabiran

Christopher Paul Daigler

Anbo Liu

Susan Clair Lauderdale

Deborah Lynn Shanley

Methods and apparatus for forming a semiconductor on glass-ceramic structure provide for: subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a precursor glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer to thereby form an intermediate semiconductor on precursor glass structure; sandwiching the intermediate semiconductor on precursor glass structure between first and second support structures; applying pressure to one or both of the first and second support structures; and subjecting the intermediate semiconductor on precursor glass structure to heat-treatment step to crystallize the precursor glass resulting in the formation of a semiconductor on glass-ceramic structure.

Glass-ceramic-based semiconductor-on-insulator structures and method for making the same

A method for producing an activated carbon material includes forming an aqueous mixture of a natural, non-lignocellulosic carbon precursor and an inorganic compound, heating the mixture in an inert or reducing atmosphere, cooling the heated mixture to form a first carbon material, and removing the inorganic compound to produce an activated carbon material. The activated carbon material is suitable to form improved carbon-based electrodes for use in high energy density devices.

Methods for forming activated carbon material for high energy density ultracapacitors

Carbon materials and methods of manufacturing carbon materials for use in high energy devices, such as electric double layer capacitors are described. High energy devices manufactured with carbon materials contemplated herein have high energy density. Methods of manufacturing carbon materials generally include providing a carbon precursor and an additive, mixing the additive with the carbon precursor prior to curing the carbon precursor, carbonizing the carbon precursor and removing the additive to form the carbon material. Such carbon materials can be used in electric double layer capacitors.

Electric double layer capacitors, capacitor materials and methods of making the same

An activated carbon material derived, for example, by carbonizing and activating a non-lignocellulosic carbon precursor has a structural order ratio less than or equal to 0.08, and a nitrogen content greater than 0.2 wt. %. The activated carbon material can also have a volumetric capacitance greater than or equal to 70 F/cm, an area-specific resistance less than or equal to 0.1 ohm-cmand/or a specific surface area greater than 300 m/g, and is suitable to form improved carbon-based electrodes for use in high energy density devices.

Activated carbon materials for high energy density ultracapacitors

A flow-through sorbent comprising at least 30 wt % of a metal sulfide, and a binder. The sorbent may be used, for example, for the removal of a contaminant, such as mercury, from a fluid stream.

Flow-through sorbent comprising a metal sulfide

The disclosure provides a method comprising contacting a fibrous polymeric material and a carbon material to form a mixture, contacting the mixture with a liquid to form a slurry, and then forming a layer comprising the slurry. Also disclosed are layers formed from the recited methods, electrodes comprising the layers, and electrical devices comprising the layers and/or electrodes.

Electrodes for electric double layer devices

The invention is directed to a carbon composition produced from a carbon precursor, a carbon precursor modifier, and an additive, wherein a mixture of the recited components is formed, the carbon precursor is cured, the resulting mixture carbonized to produce a porous carbon composition. Also disclosed are methods for preparing the carbon composition and for using the carbon composition to fabricate electrodes and electric double layer capacitors comprising the carbon composition.

High energy density ultracapacitor

Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer () of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate () composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000&#xb0; C., a resistivity at 250&#xb0; C. that is less than or equal to 10&#x3a9;-cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300-1000&#xb0; C.). The bond strength between the semiconductor layer () and the support substrate () is preferably at least 8 joules/meter. The semiconductor layer () can include a hybrid region () in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic. The support substrate () preferably includes a depletion region () which has a reduced concentration of the mobile positive ions.

Glass-based SOI structures

Methods and apparatus for producing a semiconductor on glass (SiOG) structure include: subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer in the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; and subjecting the at least one cleaved surface to a wet etching process.

Semiconductor on glass insulator made using improved thinning process

Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000&#xb0; C., a resistivity at 250&#xb0; C. that is less than or equal to 10&#x3a9;-cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300-1000&#xb0; C.). The bond strength between the semiconductor layer and the support substrate is preferably at least 8 joules/meter. The semiconductor layer can include a hybrid region in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic. The support substrate preferably includes a depletion region which has a reduced concentration of the mobile positive ions.

A ceramic honeycomb product comprising a thin-walled ceramic honeycomb structure incorporating a plurality of parallel channels bounded by thin channel walls traversing the body from a first end face to a second end face thereof; and a composite coating disposed on at least one end face of the structure comprising a powder of an abrasion-resistant ceramic dispersed in a dried siliceous matrix.

Composite coatings for thin-walled ceramic honeycomb structures

A method of forming a semiconductor on glass structure includes: establishing an exfoliation layer on a semiconductor wafer; contacting the exfoliation layer of the semiconductor wafer to a glass substrate; applying pressure, temperature and voltage to the semiconductor wafer and the glass substrate, without a vacuum atmosphere, such that a bond is established therebetween via electrolysis; and applying stress such that the exfoliation layer separates from the semiconductor wafer and remains bonded to the glass substrate.

The channel-plugging of porous ceramic honeycombs to provide wall flow filter bodies therefrom is carried out using water-based cements comprising ceramic powders and soluble alkali metal silicates; the cements form durable plugs that are resistant to thermal and chemical damage upon drying and without firing.

Composition and method for making ceramic filters

Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer () of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate () composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000&#xb0; C., a resistivity at 250&#xb0; C. that is less than or equal to 10&#x3a9;-cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300&#x2013;1000&#xb0; C.). The bond strength between the semiconductor layer () and the support substrate () is preferably at least 8 joules/meter. The semiconductor layer () can include a hybrid region () in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic. The support substrate () preferably includes a depletion region () which has a reduced concentration of the mobile positive ions.

Growing community of inventors

Lindley, NY, United States of America

Joseph Frank Mach