Coventor, Inc.

Joseph Ervin

Qing Peng Wang

Shi-Hao Huang

Yu De Chen

Rui Bao

Benjamin Vincent

Systems and methods for performing depth-dependent oxidation modeling and depth-dependent etch modeling in a virtual fabrication environment are discussed. More particularly, a virtual fabrication environment models, as part of a process sequence, oxidant dispersion in a depth-dependent manner and simulates the subsequent oxidation reaction based on the determined oxidant thickness along an air/silicon interface. Further the virtual fabrication environment performs depth-dependent etch modeling as part of a process sequence to determine etchant concentration and simulate the etching of material along an air/material interface.

System and method for performing depth-dependent oxidation modeling in a virtual fabrication environment

Systems and methods for performing depth-dependent oxidation modeling and depth-dependent etch modeling in a virtual fabrication environment

A six transistor SRAM memory cell design is discussed. An SRAM memory cell includes criss-crossed transistors in cross-coupled inverters to achieve a more compact form factor and simplify fabrication.

Static random-access memory cell design

Growing community of inventors

San Jose, CA, United States of America

Joseph Ervin