General Electric Company

Gte Products Corporation

Ge Precision Healthcare LLC

General Electric Technology Gmbh

Unison Industries, Inc.

Joseph Darryl Michael

Oscar Biblarz

Paul Thibault

Timothy John Sommerer

David John Smith

Anil Raj Duggal

Jakob Maya

Stephen Daley Arthur

Radomir I Lagushenko

Marshall Gordon Jones

Sergio Lemaitre

Carey Shawn Rogers

Mohamed Rahmane

Karim Younsi

John Scott Price

Vasile Bogdan Neculaes

Uwe Wiedmann

Fulton Jose Lopez

David Alan Lilienfeld

Andrew Thomas Cross

Steve Buresh

David Wagner

Tammy Lynn Johnson

Jody Alan Fronheiser

Kevin Sean Matocha

Ernst Wolfgang Stautner

Joseph C Borowiec

Vikas Midha

George M Cotzas

William Gregg Hawkins

Jason Fredrick Trotter

Stanton Earl Weaver, Jr

Thomas Frederick Soules

Joseph John Shiang

Vance Scott Robinson

Stanton Earl Weaver

Zoltan Toth

Sung Su Han

Paul A Thibault

John Anthony DeLuca

Juan Borja

Steven Charles Aceto

David O Wharmby

Graham M Forsdyke

James E Lawler

Peter John Desalvo

Steven John Everest

Ralph William Moulder

Bruce Edward Brackett

Jason Frederick Trotter

Sergey Joseph Zalubovsky

Matthew Michael Langenderfer

Kirk Ernest Marquard

Matthew Jason Pittman

William Nicholas Guy Hitchon

George Michael Cotzas

Various systems and methods are provided for a biased cathode assembly of an X-ray tube with improved thermal management and a method of manufacturing same. In one example, a cathode assembly of an X-ray tube comprises an emitter assembly including an emitter coupled to an emitter support structure, and an electrode assembly including an electrode stack and a plurality of bias electrodes. The emitter assembly including a plurality of independent components that are coupled together. The electrode assembly including a plurality of independent components that are coupled together, and the emitter assembly being coupled to the electrode assembly.

Biased cathode assembly of an X-ray tube with improved thermal management and a method of manufacturing same

Biased cathode assembly of an x-ray tube with improved thermal management and a method of manufacturing same

A glow discharge tube comprising a gas-sealed envelope, a first electrode, and a second electrode. The gas-sealed envelope defining an interior with an interior surface defining a first interior portion with a first interior surface and a second interior portion with a second interior surface. The first electrode being located within the first interior portion, and the second electrode being located within and in contact with the second interior portion.

Glow discharge tube with a set of electrodes within a gas-sealed envelope

A bidirectional gas discharge tube (GDT) includes a discharge chamber, first and second cathodes, a gas disposed within the discharge chamber, and a control grid. The first and second cathodes are disposed within the discharge chamber and include first and second faces, respectively. The first face and the second face are plane-parallel. The gas is configured to insulate the first cathode from the second cathode. The control grid is disposed between the first and second cathodes within the discharge chamber. The control grid is configured to generate an electric field to initiate establishment of a conductive plasma between the first and second cathodes to close a conduction path extending between the first and second cathodes.

Bidirectional gas discharge tube

According to one embodiment, a semiconductor device, having a semiconductor substrate comprising silicon carbide with a gate electrode disposed on a portion of the substrate on a first surface with, a drain electrode disposed on a second surface of the substrate. There is a dielectric layer disposed on the gate electrode and a remedial layer disposed about the dielectric layer, wherein the remedial layer is configured to mitigate negative bias temperature instability maintaining a change in threshold voltage of less than about 1 volt. A source electrode is disposed on the remedial layer, wherein the source electrode is electrically coupled to a contact region of the semiconductor substrate.

Semiconductor device and method for reduced bias threshold instability

A DC circuit breaker includes a gas discharge tube (GDT) coupled in parallel with an extinguishing path. The GDT conducts and interrupts a load current through a normal current path. The GDT includes a thermionic cathode, an anode, and a control grid. The control grid is configured to regulate opening and closing of the normal current path. The extinguishing path is configured to lengthen a break time for the DC circuit breaker.

Gas discharge tube DC circuit breaker

Embodiments of the present disclosure relate to a spark gap device that includes a first electrode having a first surface and a second electrode having a second surface offset from and facing the first surface. The spark gap device also includes a light source configured to emit light toward at least the first surface such that photons emitted by the light source when the spark gap is operated are incident on the first surface and cause electron emission from the first surface. The light source includes a discharge probe having a third electrode sealed in a tube filled with an inert gas. The spark gap device may not include a radioactive component.

Krypton-85-free spark gap with a discharge probe

A high voltage gas switch includes a gas-tight housing containing an ionizable gas at a preselected gas pressure. The gas switch includes a gas-tight housing containing an ionizable gas at a gas pressure selected based upon a Paschen curve for the ionizable gas, where the Paschen curve plots breakdown voltages of the ionizable gas as a function of gas pressure multiplied by grid-to-anode distance, and where values of gas pressure multiplied by grid-to-anode distance increase over at least a portion of the Paschen curve in conjunction with increasing breakdown voltages. The gas switch also includes an anode disposed within the gas-tight housing, a cathode disposed within the gas-tight housing, and a control grid positioned between the anode and the cathode, where the control grid is spaced apart from the anode by a grid-to-anode distance selected based upon a desired operating voltage.

High voltage, cross-field, gas switch and method of operation

A cold-cathode switching device is presented. The cold-cathode switching device includes a housing defining a chamber; an ionizable gas disposed in the chamber; and a plurality of electrodes disposed in the chamber. The plurality of electrodes includes a cathode and an anode defining a discharge gap, and wherein at least one of the cathode and anode comprises a material that is liquid at an operating temperature of the cathode or the anode.

Cold cathode switching device and converter

A gas switch includes an anode and a cathode spaced apart from the anode, wherein the cathode includes a conduction surface. The gas switch also includes a plurality of magnets arranged to generate a magnetic field that defines an annular path over a portion of the conduction surface at a radial distance from a switch axis, and a control grid positioned between the anode and the cathode. In operation, the control grid is arranged to establish a conducting plasma between the anode and the cathode, wherein, in the presence of the conducting plasma, a voltage drop between the anode and the cathode is less than 150 volts, and wherein the conducting plasma forms a cathode spot that circles the annular path.

Low voltage drop, cross-field, gas switch and method of operation

An approach is disclosed for generating seed electrons at a spark gap in the absence ofKr. The present approach utilizes the photo-electric effect, using a light source with a specific nominal wave length (or range of wavelengths) at a specific level of emitted flux to generate seed electrons.

Krypton-85-free spark gap with photo-emission

Embodiments of the present disclosure relate to a spark gap device that includes a first electrode having a first surface and a second electrode having a second surface offset from and facing the first surface. The spark gap device also includes a cantilevered component coupled to the first electrode that is configured to generate a field emission, a corona discharge or both, to emit light toward at least the first surface such that photons are incident on the first surface and cause electron emission from the first surface. The spark gap device may not include a radioactive component.

Krypton-85-free spark gap with cantilevered component

A system includes a silicon carbide (SiC) semiconductor device and a hermetically sealed packaging enclosing the SiC semiconductor device. The hermetically sealed packaging is configured to maintain a particular atmosphere near the SiC semiconductor device. Further, the particular atmosphere limits a shift in a threshold voltage of the SiC semiconductor device to less than 1 V during operation.

Semiconductor device and method for reduced bias temperature instability (BTI) in silicon carbide devices

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Delmar, NY, United States of America

Joseph Darryl Michael