Entegris, Inc.

Advanced Technology Materials, Inc.

Other

Applied Materials, Inc.

Atmi Ecosys Corporation

Joseph D Sweeney

Oleg Byl

Ying Tang

Sharad N Yedave

Robert E Kaim

Richard S Ray

Edward Edmiston Jones

Joseph Robert Despres

Barry Lewis Chambers

Peng Zou

Edward A Sturm

W Karl Olander

Anthony M Avila

Luping Wang

Jose I Arno

Paul J Marganski

Chiranjeevi Pydi

Peter C Van Buskirk

Steven E Bishop

James J Mayer

Thomas H Baum

Steven M Bilodeau

Mark R Holst

J Donald Carruthers

Michael J Wodjenski

Karl E Boggs

David James Eldridge

Brian Bobita

Christopher Scannell

Steven G Sergi

Douglas Edwards

Tianniu Chen

Frank DiMeo, Jr

James A Dietz

Mackenzie E King

Steven M Lurcott

Shaun M Wilson

Gregory T Stauf

Jeffrey W Neuner

Scott Lane

Prakash V Arya

Matthew B Donatucci

Jeffrey J Homan

Lin Feng

Joe R Despres

Chris Scannell

Jason Deseve

Jeff Lorelli

Sam Yee

Gregory Scott Baumgart

Oleg Bly

James V Mcmanus

Karl W Olander

Steven Sergi

Frank Dimeo

Joseph Marzullo

Donald J Carruthers

Described are ion implantation devices, systems, and methods, and in particular to an ion source that is useful for generating an aluminum ion beam.

Method and systems useful for producing aluminum ions

The current disclosure is directed to methods and assemblies configured to deliver a mixture of germanium tetrafluoride (GeF) and hydrogen (H) gases to an ion implantation apparatus, so His present in an amount in the range of 25%-67% (volume) of the gas mixture, or the GeFand Hare present in a volume ratio (GeF:H) in the range of 3:1 to 33:67. The use of the Hgas in an amount in mixture or relative to the GeFgas prevents the volatilization of cathode material, thereby improving performance and lifetime of the ion implantation apparatus. Gas mixtures according to the disclosure also result in a significant Gecurrent gain and Wpeak reduction during au ion implantation procedure.

Germanium tetraflouride and hydrogen mixtures for an ion implantation system

A system and method for ion implantation is described, which includes a gas or gas mixture including at least one ionizable gas used to generate ionic species and an arc chamber that includes two or more different arc chamber materials. Using the system ionic species are generated in the arc chamber with liner combination, and one or more desired ionic species display a higher beam current among the ionic species generated, which is facilitated by use of the different materials. In turn improved implantation of the desired ionic species into a substrate can be achieved. Further, the system can minimize formation of metal deposits during system operation, thereby extending source life and promoting improved system performance.

Ion implantation system with mixture of arc chamber materials

A system and method for fluorine ion implantation is described, which includes a fluorine gas source used to generate a fluorine ion species for implantation to a subject, and an arc chamber that includes one or more non-tungsten materials (graphite, carbide, fluoride, nitride, oxide, ceramic). The system minimizes formation of tungsten fluoride during system operation, thereby extending source life and promoting improved system performance. Further, the system can include a hydrogen and/or hydride gas source, and these gases can be used along with the fluorine gas to improve source lifetime and/or beam current.

Fluorine ion implantation system with non-tungsten materials and methods of using

Described are storage and dispensing vessels and related systems and methods, for dispensing reagent gas from a vessel in which the reagent gas is held in sorptive relationship to a solid adsorbent medium, the reagent gas being contained at super-atmospheric pressure and the solid adsorbent medium comprising a metal-organic framework.

Adsorbent-based, mechanically-regulated gas storage and delivery vessel

The current disclosure is directed to methods and assemblies configured to deliver a mixture of germanium tetrafluoride (GeF) and hydrogen (H) gases to an ion implantation apparatus, so His present in an amount in the range of 25%-67% (volume) of the gas mixture, or the GeFand Hare present in a volume ratio (GeF:H) in the range of 3:1 to 33:67. The use of the Hgas in an amount in mixture or relative to the GeFgas prevents the volatilization of cathode material, thereby improving performance and lifetime of the ion implantation apparatus. Gas mixtures according to the disclosure also result in a significant Gecurrent gain and Wpeak reduction during an ion implantation procedure.

Compositions, systems, and methods are described for implanting silicon and/or silicon ions in a substrate, involving generation of silicon and/or silicon ions from corresponding silicon precursor compositions, and implantation of the silicon and/or silicon ions in the substrate.

Silicon implantation in substrates and provision of silicon precursor compositions therefor

A hydrogenated isotopically enriched boron trifluoride (BF3) dopant source gas composition. The composition contains (i) boron trifluoride isotopically enriched above natural abundance in boron of atomic mass 11 (UB), and (ii) hydrogen in an amount of from 2 to 6.99 vol. %, based on total volume of boron trifluoride and hydrogen in the composition. Also described are methods of use of such dopant source gas composition, and associated apparatus therefor.

Hydrogenated isotopically enriched boront trifluoride dopant source gas composition

An ion source apparatus for ion implantation is described, including an ion source chamber, and a consumable structure in or associated with the ion source chamber, in which the consumable structure includes a solid dopant source material susceptible to reaction with a reactive gas for release of dopant in gaseous form to the ion source chamber, wherein the solid dopant source material comprises gallium nitride, gallium oxide, either of which may be isotopically enriched with respect to a gallium isotope, or combinations thereof.

Ion implantation processes and apparatus using gallium

A fluid supply package is described, which includes a fluid storage and dispensing vessel, and a fluid dispensing assembly coupled to the vessel and configured to enable discharge of fluid from the vessel under dispensing conditions, wherein the fluid supply package includes an informational augmentation device thereon, e.g., at least one of a quick read (QR) code and an RFID tag, for informational augmentation of the package. Process systems are described including process tools and one or more fluid supply packages of the foregoing type, wherein the process tool is configured for communicative interaction with the fluid supply package(s). Various communicative arrangements are described, which are usefully employed to enhance the efficiency and operation of process systems in which fluid supply packages of the foregoing type are employed.

Smart package

The lawn debris collection device is configured for use in the collection of debris. The lawn debris collection device is configured for use with a trash bag. The lawn debris collection device holds the trash bag in an open position during the collection of debris. The debris is moved to the upwind side of the lawn debris collection device where the debris remains trapped until the debris is placed in the trash bag. The lawn debris collection device folds flat when not in use. The lawn debris collection device comprises a first side support, a second side support, a center support, and an elevated ring structure. The center support and the elevated ring structure attach the first side support to the second side support. Both the center support and the elevated ring structure are configured to hold a trash bag in the open position.

Lawn debris collection device

A gas supply assembly is described for delivery of gas to a plasma flood gun which includes an inert gas and a fluorine-containing gas, wherein the assembly is configured to deliver a volume of the fluorine-containing gas to the flood gun that is not greater than 10% of a total volume of the fluorine-containing and inert gasses. The fluorine-containing gas can generate volatile reaction product gases from material deposits in the plasma flood gun, and to effect re-metallization of a plasma generation filament in the plasma flood gun. In combination with the gas amounts, the assembly and methods can use gas flow rates to optimize the cleaning effect and reduce filament material loss from the plasma flood gun during use.

Methods and assemblies using fluorine containing and inert gases for plasma flood gun operation

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New Milford, CT, United States of America

Joseph D Sweeney