Intel Corporation

University System of Maryland

Princeton University

Zeon Corportion

Joseph D'silva

Mauro J Kobrinsky

Leonard P Guler

Robert H Austin

James Christopher Sturm

Nafees Kabir

Curt I Civin

Khushroo Gandhi

Michael Grisham

Anthony Ward

Alison Skelley

Makram Abd El Qader

Lee Aurich

Shaun Mills

Gate-all-around integrated circuit structures having backside contact with enhanced area relative to an epitaxial source or drain region are described. For example, an integrated circuit structure includes a first vertical arrangement of nanowires and a second vertical arrangement of nanowires. A gate stack is over the first and second vertical arrangements of nanowires. First epitaxial source or drain structures are at ends of the first vertical arrangement of nanowires. Second epitaxial source or drain structures are at ends of the second vertical arrangement of nanowires. A conductive structure is vertically beneath and in contact with one of the first epitaxial source or drain structures. The conductive structure is along an entirety of a bottom of the one of the first epitaxial source or drain structures, and the conductive structure can also be along a portion of sides of one of the first epitaxial source or drain structures.

Gate-all-around integrated circuit structures having backside contact with enhanced area relative to epitaxial source

Described herein are microfluidic devices and methods that can separate and concentrate particles in a sample.

Methods and devices for multi-step cell purification and concentration

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Hillsboro, OR, United States of America

Joseph D'silva