Versum Materials Us, LLC

Joseph D Rose

Xiaobo Shi

Hongjun Zhou

Mark Leonard O'Neill

Krishna P Murella

James Allen Schlueter

Malcolm Grief

Dnyanesh Chandrakant Tamboli

Ming-Shih Tsai

James Matthew Henry

Rung-Je Yang

Chris Keh-Yeuan Li

Timothy Joseph Clore

Vid Gopal

Esmeralda Yitamben

Anupama Mallikarjunan

Hieu Pham

Shirley Lin

Lu Gan

Ryan Clarke

Anu Mallikarjunan

Chia-Chien Lee

Cesar Clavero

Mark Leonard O'neill

Ming Tsai

Malcom Grief

Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic oxide particles, such as ceria-coated silica; and dual chemical additives for providing the tunable oxide film removal rates and tunable SiN film removal rates; low oxide trench dishing, and high oxide: SiN selectivity. Dual chemical additives comprise at least one silicone-containing compound comprising at least one of (1) ethylene oxide and propylene oxide (EO-PO) group, and at least one of substituted ethylene diamine group on the same molecule; and (2) at least one non-ionic organic molecule having at least two, preferably at least four hydroxyl functional groups.

Low dishing oxide CMP polishing compositions for shallow trench isolation applications and methods of making thereof

A method for developing or improving a process for producing a product from a material comprising steps of acquiring the composition for at least two slurries as raw material data () for the CMP based manufacturing process and its relevant parameters () by using a Data Collecting computer (); physically performing specific method steps of a CMP process; measuring relevant parameters of the used slurries and the physically performed CMP process to determine the CMP process performance by using the Data Collecting computer (); analyzing the measured data about the relevant parameters with a specific software performed on an Analyzing computer () by creating for the software and applying with it a predictive model using Machine Learning to understand the intercorrelation of the different parameters and using the results to improve the CMP process performance and the resulting product quality of the CMP based manufacturing process.

Shared data induced quality control for a chemical mechanical planarization process

High oxide film removal rate Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods, and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic oxide particles, such as ceria-coated silica; and a chemical additive for providing a high oxide film removal rate. The chemical additive is a gelatin molecule possessing negative and positive charges on the same molecule.

High oxide film removal rate shallow trench (STI) chemical mechanical planarization (CMP) polishing

Polishing compositions comprising ceria coated silica particles and organic acids having one selected from the group consisting of sulfonic acid group, phosphonic acid group, pyridine compound, and combinations thereof, with pH between 5 and 10 and electrical conductivity between 0.2 and 10 millisiemens per centimeter provide very high silicon oxide removal rates for advanced semiconductor device manufacturing.

Chemical mechanical planarization composition for polishing oxide materials and method of use thereof

Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO:SiN selectivity are also provided. The compositions use a unique combination of abrasives such as ceria coated silica particles and chemical additives such as maltitol, lactitol, maltotritol or combinations as oxide trench dishing reducing additives.

Low oxide trench dishing chemical mechanical polishing

Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO:SiN selectivity are also provided. The compositions use unique chemical additives, such as maltitol, lactitol, maltotritol, ribitol, D-sorbitol, mannitol, dulcitol, iditol, D-(&#x2212;)-Fructose, sorbitan, sucrose, ribose, Inositol, glucose, D-arabinose, L-arabinose, D-mannose, L-mannose, meso-erythritol, beta-lactose, arabinose, or combinations thereof as oxide trench dishing reducing additives.

Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic metal oxide particles, such as ceria-coated silica; and dual chemical additives for providing the tunable oxide film removal rates and tunable SiN film removal rates. Chemical additives comprise at least one nitrogen-containing aromatic heterocyclic compound and at least one non-ionic organic molecule having more than one hydroxyl functional group organic.

Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with tunable silicon oxide and silicon nitride removal rates

The present invention provides Chemical Mechanical Planarization Polishing (CMP) compositions for Shallow Trench Isolation (STI) applications. The CMP compositions contain ceria coated inorganic metal oxide particles as abrasives, such as ceria-coated silica particles; chemical additive selected from the first group of non-ionic organic molecules multi hydroxyl functional groups in the same molecule; chemical additives selected from the second group of aromatic organic molecules with sulfonic acid group or sulfonate salt functional groups and combinations thereof; water soluble solvent; and optionally biocide and pH adjuster; wherein the composition has a pH of 2 to 12, preferably 3 to 10, and more preferably 4 to 9.

Oxide chemical mechanical planarization (CMP) polishing compositions

Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic metal oxide particles, such as ceria-coated silica; and dual chemical additives for providing high oxide film removal rate. The dual chemical additives comprise gelatin compounds possessing negative and positive charges on the same molecule, and non-ionic organic molecules having multi hydroxyl functional groups in the same molecule.

Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with low abrasive concentration and a combination of chemical additives

The present invention discloses STI CMP polishing compositions, methods and systems that significantly reduce oxide trench dishing and improve over-polishing window stability in addition to provide high and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable high selectivity of SiO:SiN through the use of an unique combination of ceria inorganic oxide particles, such as ceria coated silica particles as abrasives, and an oxide trench dishing reducing additive of poly(methacrylic acids), its derivatives, its salts, or combinations thereof.

Low oxide trench dishing shallow trench isolation chemical mechanical planarization polishing

Present invention provides Chemical Mechanical Planarization Polishing (CMP) compositions for Shallow Trench Isolation (STI) applications. The CMP compositions contain ceria coated inorganic oxide particles as abrasives, such as ceria-coated silica particles; chemical additive selected from the group consisting of an organic acetylene molecule containing an acetylene bond and at least two or multi ethoxylate functional groups with terminal hydroxyl groups, an organic molecule with at least two or multi hydroxyl functional groups in the same molecule, and combinations thereof; water soluble solvent; and optionally biocide and pH adjuster; wherein the composition has a pH of 2 to 12, preferably 3 to 10, and more preferably 4 to 9.

Suppressing SiN removal rates and reducing oxide trench dishing for Shallow Trench Isolation (STI) process

Chemical Mechanical Planarization (CMP) polishing compositions comprising abrasive particles and additives to boost removal rates of films comprising elemental silicon such as poly-silicon and Silicon-Germanium.

Chemical mechanical planarization of films comprising elemental silicon

Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO: SiN selectivity are also provided. The compositions use unique chemical additives, such as maltitol, lactitol, maltotritol, ribitol, D-sorbitol, mannitol, dulcitol, iditol, D-(&#x2212;)-Fructose, sorbitan, sucrose, ribose, Inositol, glucose, D-arabinose, L-arabinose, D-mannose, L-mannose, meso-erythritol, beta-lactose, arabinose, or combinations thereof as oxide trench dishing reducing additives.

Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO: SiN selectivity are also provided. The compositions use a unique combination of abrasives such as ceria coated silica particles and chemical additives such as maltitol, lactitol, maltotritol or combinations as oxide trench dishing reducing additives.

Chemical mechanical polishing (CMP) compositions, methods and systems for polish cobalt or cobalt-containing substrates are provided. The CMP compositions comprise &#x3b1;-alanine, abrasive particles, a salt of phosphate, corrosion inhibitor, oxidizer and water. The cobalt chemical mechanical polishing compositions provide high removal rate of Co as well as very high selectivity of Co film vs. dielectric film, such as TEOS, SixNy (with 1.0&#x3c;x&#x3c;3.0, 1.33&#x3c;y&#x3c;4.0), low-k, and ultra low-k films.

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Gilbert, AZ, United States of America

Joseph D Rose