Mattson Technology, Inc

Beijing E-town Semiconductor Technology, Co., Ltd

Mattson Technology Canada, Inc.

Joseph Cibere

Michael Xiaoxuan Yang

David Malcolm Camm

Rolf Bremensdorfer

Dieter Hezler

Dave Camm

Mladen Bumbulovic

Shawming Ma

Greg Stuart

Markus Lieberer

Dixit V Desai

Steve McCoy

Sergiy Dets

Alex Wansidler

Tony Komasa

Ljubomir Kaludjercic

Yun Yang

Marc Rudolph

Guillaume Sempere

Pete Lembesis

Gregory Stuart

Tim Tran

Christian Pfahler

J Kiefer Elliott

An apparatus for combining plasma processing and thermal processing of a workpiece is presented. The apparatus includes a processing chamber, a plasma chamber separated from the processing chamber disposed on a first side of the processing chamber, and a plasma source configured to generate a plasma in the plasma chamber. A quartz workpiece support is disposed within the processing chamber, the workpiece support configured to support a workpiece. One or more radiative heat sources configured to heat the workpiece are disposed on a second and opposite side of the first side of the processing chamber. A dielectric window is disposed between the workpiece support and the one or more heat sources. In addition, the apparatus includes a temperature measurement system configured to obtain a temperature measurement indicative of a temperature of the workpiece.

Workpiece processing apparatus with thermal processing systems

A control system operable to train a control tuner to generate temperature setpoint tracking improvements for a thermal processing system is provided. In one example implementation, temperature setpoint tracking improvements are achieved by generating system controller parameter adjustments based on a difference between a simulated workpiece temperature estimate and an actual workpiece temperature estimate. For example, a system model can generate a simulated workpiece temperature estimate simulating an actual workpiece temperature estimate, and based on the difference between the simulated and actual workpiece temperature estimates, generate clone controller parameter adjustments. The clone controller parameter adjustments can be used to generate system controller parameter adjustments, which can improve temperature setpoint tracking for the thermal processing system.

Control system for adaptive control of a thermal processing system

Apparatus, systems, and methods for processing workpieces are provided. An arc lamp can include a tube. The arc lamp can include one or more inlets configured to receive water to be circulated through the arc lamp during operation as a water wall, the water wall configured to cool the arc lamp. The arc lamp can include a plurality of electrodes configured to generate a plasma in a forming gas introduced into the arc lamp via the one or more inlets. The forming gas can be or can include a mixture of a hydrogen gas and an inert gas, the hydrogen gas in the mixture having a concentration less than 4% by volume. The hydrogen gas can be introduced into the arc lamp prior to generating the plasma. The arc lamp may be used for processing workpieces.

Arc lamp with forming gas for thermal processing systems

Systems and methods for reducing contamination of one or more arc lamps are provided. One example implementation is directed to a millisecond anneal system. The millisecond anneal system includes a processing chamber for thermally treating a substrate using a millisecond anneal process. The system further includes one or more arc lamps. Each of the one or more arc lamps is coupled to a water loop for circulating water through the arc lamp during operation of the arc lamp. The system includes a reagent injection source configured to introduce a reagent, such as nitrogen gas, into water circulating through the arc lamp during operation of the arc lamp.

Nitrogen injection for arc lamps

Workpiece processing apparatus with plasma and thermal processing systems

Systems and methods for substrate support in a millisecond anneal system are provided. In one example implementation, a millisecond anneal system includes a processing chamber having a wafer support plate. A plurality of support pins can extend from the wafer support plate. The support pins can be configured to support a substrate. At least one of the support pins can have a spherical surface profile to accommodate a varying angle of a substrate surface normal at the point of contact with the substrate. Other example aspects of the present disclosure are directed to methods for estimating, for instance, local contact stress at the point of contact with the support pin.

Substrate support in a millisecond anneal system

Systems and methods for gas flow in a thermal processing system are provided. In some example implementations a gas flow pattern inside the process chamber of a millisecond anneal system can be improved by implementing one or more of the following: (1) altering the direction, size, position, shape and arrangement of the gas injection inlet nozzles, or a combination hereof; (2) use of gas channels in a wafer plane plate connecting the upper chamber with the lower chamber of a millisecond anneal system; and/or (3) decreasing the effective volume of the processing chamber using a liner plate disposed above the semiconductor substrate.

Gas flow control for millisecond anneal system

Nitrogen injection for ARC lamps

Apparatus, systems, and processes for substrate breakage detection in a thermal processing system are provided. In one example implementation, a process can include: accessing data indicative of a plurality of temperature measurements for a substrate, the plurality of measurements obtained during a cool down period of a thermal process; estimating one or more metrics associated with a cooling model based at least in part on the data indicative of the plurality of temperature measurements; and determining a breakage detection signal based at least in part on the one or more metrics associated with the cooling model. The breakage detection signal is indicative of whether the substrate has broken during thermal processing.

Substrate breakage detection in a thermal processing system

Apparatuses and methods for supporting a workpiece such as a semiconductor wafer. A support system is configured to support the workpiece while allowing thermally-induced motion of the workpiece, which may include thermal bowing or thermal bending. The system may include a support member having a moveable engagement portion engageable with the workpiece, the engagement portion being moveable to allow the thermally-induced motion of the workpiece while supporting the workpiece. The moveable engagement portion may include a plurality of moveable engagement portions of a plurality of respective support members, which may be resiliently engageable with the workpiece. The support members may include flexible support members each having an unconstrained portion and a constrained portion, and the moveable engagement portions may include the unconstrained portions. Alternatively, the support members may be rigid and the system may include a plurality of force applicators such as springs in communication with the support members.

Methods and systems for supporting a workpiece and for heat-treating the workpiece

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Burnaby, Canada

Joseph Cibere