The Boeing Company

Joseph Charles Boisvert

Daniel C Law

Christopher M Fetzer

Richard Roland King

Nasser H Karam

Rengarajan Sudharsanan

Dimitri Daniel Krut

Xing-Quan Liu

Dmitri D Krut

Ping Yuan

Kenneth M Edmondson

William D Hong

Andreea Boca

Scott B Singer

Eric Rehder

Xiaobo Zhang

Moran Haddad

Robyn L Woo

Geoffrey S Kinsey

Takahiro D Isshiki

Peichen Pien

Charles B Morrison

Nassar H Karam

In one aspect, optoelectronic devices are described herein. In some implementations, an optoelectronic device comprises a photovoltaic cell. The photovoltaic cell comprises a space-charge region, a quasi-neutral region, and a low bandgap absorber region (LBAR) layer or an improved transport (IT) layer at least partially positioned in the quasi-neutral region of the cell.

Solar cell structures for improved current generation and collection

A solar cell structure is disclosed. The solar cell structure comprises a carrier having a front side and a P-N junction, a solar cell electrically coupled to the front side of the carrier, and an adhesive layer. The adhesive layer bonds the front side of the carrier to the solar cell. The adhesive layer includes conductive particles that electrically couple the carrier to the solar cell.

Semiconductor device including an electrically conductive adhesive layer and a bypass diode in a carrier

A type-II tunnel junction is disclosed that includes a p-doped AlGaInAs tunnel layer and a n-doped InP tunnel layer. Solar cells are further disclosed that incorporate the high bandgap type-II tunnel junction between photovoltaic subcells.

Type-II high bandgap tunnel junctions of InP lattice constant for multijunction solar cells

A semiconductor structure including a bonding layer connecting a first semiconductor wafer layer to a second semiconductor wafer layer, the bonding layer including an electrically conductive carbonaceous component and a binder component.

Solar cell structure and composition and method for forming the same

An avalanche photodiode detector is provided. The avalanche photodiode detector comprises an absorber region having an absorption layer for receiving incident photons and generating charged carriers; and a multiplier region having a multiplication layer; wherein the multiplier region is on a mesa structure separate from the absorber region and is coupled to the absorber region by a bridge for transferring charged carriers between the absorber region and multiplier region.

Avalanche photodiode detector

Technologies for a process used to reduce the height of a raised profile of a device. One or more raised profiles on one or more layers of a device are removed using a combined chemical-mechanical polishing/etching process. In some implementations, a protective layer is applied to a top layer of a device grown on a substrate. A combined chemical-mechanical polishing/etching process may commence whereby one or more raised profiles of the protective layer are removed through a planarization process, exposing at least a portion of a raised profile of a layer below the protective layer. Material may be removed using an etchant to reduce the height of the raised profile.

Removal of defects by in-situ etching during chemical-mechanical polishing processing

A laser detection and ranging (LADAR) system is provided for generating a three-dimensional image of an object. The LADAR system includes a laser source configured to project a laser beam onto the object, and a photodiode detector array configured to detect a reflection of the laser beam projected onto the object. The photodiode detector array includes a back interface, a front interface positioned opposite the back interface, and a passivation region disposed between the back interface and the front interface. The back interface includes at least one window, and the front interface includes at least one active region oriented to detect a photon associated with the reflection. The at least one active region includes an absorber and a multiplier. The filter is configured to have a bandgap between an absorber bandgap and a multiplier bandgap.

Methods and systems for reducing crosstalk in avalanche photodiode detector arrays

Methods for improving the performance and lifetime of irradiated photovoltaic cells are disclosed, whereby Group-V elements, and preferably nitrogen, are used to dope semiconductor GaAs-based subcell alloys.

Group V doping of GaAs-based layers to improve radiation tolerance of solar cells

A solar cell including a base semiconductor layer having a first bandgap, an emitter semiconductor layer having a second bandgap and a depletion semiconductor layer positioned between the base semiconductor layer and the emitter semiconductor layer, the depletion semiconductor layer having a third bandgap, wherein the third bandgap is greater than the first bandgap and the second bandgap.

Heterojunction solar cell

A photodetector and a method for fabricating a photodetector. The photodetector may include a substrate, a buffer layer formed on the substrate, and an absorption layer formed on the buffer layer for receiving incident photons and generating charged carriers. An N-doped interface layer may be formed on the absorption layer, an N-doped cap layer may be formed on the N-doped interface layer, and a dielectric passivation layer may be formed above the cap layer. A Pdiffusion region may be formed within the cap layer, the N-doped interface layer and at least a portion of the absorption layer, and at least one contact may be formed on and coupled to the Pdiffusion region.

Ultra low dark current pin photodetector

A photodiode and method of forming a photodiode has a substrate. An absorption layer is formed on the substrate to absorb lightwaves of a desired frequency range. A multiplication structure is formed on the absorption layer. The multiplication layer uses a low dark current avalanching material. The absorption layer and the multiplication layer are formed into at least one mesa having in an inverted 'T' configuration to reduce junction area between the absorption layer and the multiplication layer. A dielectric layer is formed over the at least one mesa. At least one contact is formed on the dielectric layer and coupled to the at least one mesa.

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Thousand Oaks, CA, United States of America

Joseph Charles Boisvert