X-celeprint Limited

Semprius, Inc.

X Display Company Technology Limited

Osram Opto Semiconductors Gmbh

Qd Vision, Inc.

Joseph Carr

Christopher Andrew Bower

Matthew Alexander Meitl

Etienne Menard

Ronald S Cok

Seth A Coe-Sullivan

Scott Burroughs

Brent A Fisher

Brian Cox

Gregory V Moeller

A monolithic multi-FET transistor comprises an epitaxial layer disposed on a dielectric layer. The epitaxial layer comprises a crystalline semiconductor material and a multi-FET area. An isolation structure surrounds the multi-FET area and divides the multi-FET area into separate FET portions. A gate disposed on a gate dielectric extends over each FET portion. A source and a drain are each disposed on opposite sides of the gate on the epitaxial layer within each FET portion. Each gate, source, and drain comprise a separate electrical conductor and the gate, source, drain, and epitaxial layer within each FET portion form a field-effect transistor. Gate, source, and drain contacts electrically connect the gates, sources, and drains of the separate FET portions, respectively. At least the sources or drains of two neighboring FET portions are disposed in common over at least a portion of the isolation structure dividing the two neighboring FET portions.

Monolithic multi-FETS

A method of making a secure integrated-circuit system comprises providing a first integrated circuit in a first die having a first die size and providing a second integrated circuit in a second die. The second die size is smaller than the first die size. The second die is transfer printed onto the first die and connected to the first integrated circuit, forming a compound die. The compound die is packaged. The second integrated circuit is operable to monitor the operation of the first integrated circuit and provides a monitor signal responsive to the operation of the first integrated circuit. The first integrated circuit can be constructed in an insecure facility and the second integrated circuit can be constructed in a secure facility.

Secure integrated-circuit systems

Methods of forming integrated circuit devices include forming a sacrificial layer on a handling substrate and forming a semiconductor active layer on the sacrificial layer. The semiconductor active layer and the sacrificial layer may be selectively etched in sequence to define an semiconductor-on-insulator (SOI) substrate, which includes a first portion of the semiconductor active layer. A multi-layer electrical interconnect network may be formed on the SOI substrate. This multi-layer electrical interconnect network may be encapsulated by an inorganic capping layer that contacts an upper surface of the first portion of the semiconductor active layer. The capping layer and the first portion of the semiconductor active layer may be selectively etched to thereby expose the sacrificial layer. The sacrificial layer may be selectively removed from between the first portion of the semiconductor active layer and the handling substrate to thereby define a suspended integrated circuit chip encapsulated by the capping layer.

Printable device wafers with sacrificial layers

Monolithic multi-FETs

Wafers with etchable sacrificial patterns, anchors, tethers, and printable devices

Methods of making printable device wafers with sacrificial layers

An optical power transfer device includes a transmitter circuit, including a laser light source that is configured to emit coherent light responsive to operation above a lasing threshold, and is configured to emit incoherent light responsive operation below the lasing threshold. A proximity sensor circuit is coupled to the transmitter circuit and is configured to output a detection signal therefrom responsive to authentication of an optical receiver including at least one photovoltaic cell having surface area of about 4 square millimeters or less within a proximity thereof. The transmitter circuit is configured to operate the laser light source below the lasing threshold to emit the incoherent light responsive to an absence of the detection signal from the proximity sensor circuit. Related devices and methods of operation are also discussed.

Layers of safety and failsafe capability for operation of class IV laser in consumer electronics devices

Printable device wafers with sacrificial layers gaps

A method for selectively transferring active components () from a source substrate () to a destination substrate () includes providing a source substrate with one or more active components located on the source substrate, providing a destination substrate, locating a selectively curable adhesive layer () between and adjacent to the destination substrate and the source substrate, selecting one or more active components (A), selectively curing area(s) (A) of the adhesive layer corresponding to the selected active components to adhere the selected active components to the destination substrate, and removing the source substrate from the destination substrate leaving the selected active components adhered to the destination substrate in the selected areas.

Methods of selectively transferring active components

Methods of forming printable integrated circuit devices and devices formed thereby

A method for fabricating a substrate having transferable chiplets includes forming a photo-sensitive adhesive layer on a process side of a source substrate including active components or on a patterned side of a transparent intermediate substrate. The transparent intermediate substrate is brought into contact with the source substrate to adhere the active components on the process side to the patterned side of the transparent intermediate substrate via the photo-sensitive adhesive layer therebetween. Portions of the source substrate opposite the process side thereof are removed to singulate the active components. Portions of the photo-sensitive adhesive layer are selectively exposed to electromagnetic radiation through the transparent intermediate substrate to alter an adhesive strength thereof. Portions of the photo-sensitive adhesive layer having a weaker adhesive strength are selectively removed to define breakable tethers comprising portions of the adhesive layer having a stronger adhesive strength. The breakable tethers physically secure the active components to the transparent intermediate substrate. Related devices are also discussed.

Substrates with transferable chiplets

Methods of forming integrated circuit devices include forming a sacrificial layer on a handling substrate and forming a semiconductor active layer on the sacrificial layer. A step is performed to selectively etch through the semiconductor active layer and the sacrificial layer in sequence to define an semiconductor-on-insulator (SOI) substrate, which includes a first portion of the semiconductor active layer. A multi-layer electrical interconnect network may be formed on the SOI substrate. This multi-layer electrical interconnect network may be encapsulated by an inorganic capping layer that contacts an upper surface of the first portion of the semiconductor active layer. A step can be performed to selectively etch through the capping layer and the first portion of the semiconductor active layer to thereby expose the sacrificial layer. The sacrificial layer may be selectively removed from between the first portion of the semiconductor active layer and the handling substrate to thereby define a suspended integrated circuit chip encapsulated by the capping layer.

Growing community of inventors

Chapel Hill, NC, United States of America

Joseph Carr