Varian Semiconductor Equipment Associates, Inc.

Applied Materials, Inc.

Other

Varian Semiconductor Associates, Inc.

Joseph C Olson

Morgan Evans

Rutger Meyer Timmerman Thijssen

Anthony Renau

Ludovic Godet

Peter F Kurunczi

Frank Sinclair

Shengwu Chang

Russell J Low

Atul Gupta

Donna Smatlak

Costel Biloiu

Eric D Hermanson

John J Hautala

Jonathan Gerald England

Antonella Cucchetti

Rosario Mollica

Timothy J Miller

Paul J Murphy

Christopher R Hatem

Christopher W Campbell

Christopher A Rowland

James Paul Buonodono

Patrick M Martin

Leo Klos

Daniel Distaso

Gregg Alexander Norris

Damian Brennan

Kenneth Harry Purser

Vikram Singh

Alexandre Likhanskii

Tristan Yonghui Ma

Kevin M Daniels

Robert C Lindberg

George Gammel

Eric R Cobb

David R Timberlake

Norman E Hussey

Robert Masci

Min Gyu Sung

William Tyler Weaver

Visweswaren Sivaramakrishnan

Deepak Arabagatte Ramappa

Huixiong Dai

Sony Varghese

Jinxin Fu

Jay Thomas Scheuer

Wayne McMillan

Christopher J Leavitt

Piotr R Lubicki

James S Buff

Stanislav S Todorov

Jun Lu

Naamah Argaman

Manny Sieradzki

Gordon Angel

Edward W Bell

Richard Allen Sprenkle

Kurt T Decker-Lucke

William Gray Callahan

Gregory R Gibilaro

Matthew P McClellan

Marie J Welsch

James J Cummings

Christopher Dennis Bencher

Victor M Benveniste

Charles T Carlson

Benjamin B Riordon

Craig Richard Chaney

Neil J Bassom

John W Graff

Alexander S Perel

Robert J Mitchell

Kasegn D Tekletsadik

Jay R Wallace

Shurong Liang

Tseh-Jen Hsieh

D Jeffrey Lischer

Klaus Becker

Paul Sullivan

Tsung-Liang Chen

Arthur H Clough

Gary E Dickerson

Nicholas Pt Bateman

Joseph P Dzengeleski

Peng Xie

Bjorn O Pedersen

Stephen Krause

Steve Krause

Jeffrey A Burgess

Jon Ballou

Dennis P Rodier

Ryan C Boas

James R McLane

Chris Campbell

Jeannot Morin

Kevin T Ryan

Daniel McGillicuddy

William Bintz

Douglas E May

An apparatus may include a cyclotron to receive an ion beam as an incident ion beam at an initial energy, and output the ion beam as an accelerated ion beam at an accelerated ion energy. The apparatus may further include an RF source to output an RF power signal to the cyclotron chamber, the RF power source comprising a variable power amplifier, and a movable stripper, translatable to intercept the ion beam within the cyclotron at a continuum of different positions.

Cyclotron having continuously variable energy output

Embodiments described herein relate to methods and apparatus for forming gratings having a plurality of fins with different slant angles on a substrate and forming fins with different slant angles on successive substrates using angled etch systems and/or an optical device. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle ϑ relative to a surface normal of the substrates and form gratings in the grating material.

Modulation of rolling k vectors of angled gratings

A system may include a substrate stage, configured to support a substrate, where a main surface of the substrate defines a substrate plane. The system may include an ion source, including an extraction assembly that is oriented to direct an ion beam to the substrate along a trajectory defining a non-zero angle of incidence with respect to a perpendicular to the substrate plane. The system may include a radical source oriented to direct a radical beam to the substrate along a trajectory defining the non-zero angle of incidence with respect to a perpendicular to the substrate plane. The substrate stage may be further configured to scan the substrate along a first direction, lying with the substrate plane, while the main surface of the substrate is oriented within the substrate plane.

Scanned angled etching apparatus and techniques providing separate co-linear radicals and ions

A method for forming a device structure is disclosed. The method of forming a device structure includes forming a variable-depth structure in a device material layer using a laser ablation. A plurality of device structures is formed in the variable-depth structure to define slanted device structures therein. The variable-depth structure and the slanted device structures are formed using an etch process.

Forming variable depth structures with laser ablation

A system comprising a spinning disk is disclosed. The system comprises a semiconductor processing system, such as a high energy implantation system. The semiconductor processing system produces a spot ion beam, which is directed to a plurality of workpieces, which are disposed on the spinning disk. The spinning disk comprises a rotating central hub with a plurality of platens. The plurality of platens may extend outward from the central hub and workpieces are electrostatically clamped to the platens. The plurality of platens may also be capable of rotation. The central hub also controls the rotation of each of the platens about an axis orthogonal to the rotation axis of the central hub. In this way, variable angle implants may be performed. Additionally, this allows the workpieces to be mounted while in a horizontal orientation.

Spinning disk with electrostatic clamped platens for ion implantation

A system may include a substrate stage to support a substrate, and a plurality of beam sources. The plurality of beam sources may include an ion beam source, the ion beam source arranged to direct an ion beam to the substrate, and a radical beam source, the radical beam source arranged to direct a radical beam to the substrate. The system may include a controller configured to control the ion beam source and the radical beam source to operate independently of one another, in at least one aspect, wherein the at least one aspect includes beam composition, beam angle of incidence, and relative scanning of a beam source with respect to the substrate.

Apparatus and techniques for substrate processing using independent ion source and radical source

A plasma source may include a plasma chamber, where the plasma chamber has a first side, defining a first plane and an extraction assembly, disposed adjacent to the side of the plasma chamber, where the extraction assembly includes at least two electrodes. A first electrode may be disposed immediately adjacent the side of the plasma chamber, wherein a second electrode defines a vertical displacement from the first electrode along a first direction, perpendicular to the first plane, wherein the first electrode comprises a first aperture, and the second electrode comprises a second aperture. The first aperture may define a lateral displacement from the second aperture along a second direction, parallel to the first plane, wherein the vertical displacement and the lateral displacement define a non-zero angle of inclination with respect to a perpendicular to the first plane.

Apparatus and techniques for angled etching using multielectrode extraction source

A processing system may include a plasma chamber operable to generate a plasma, and an extraction assembly, arranged along a side of the plasma chamber. The extraction assembly may include an extraction plate including an extraction aperture, the extraction plate having a non-planar shape, and generating an extracted ion beam at a high angle of incidence with respect to a perpendicular to a plane of a substrate, when the plane of the substrate is arranged parallel to the side of the plasma chamber.

Apparatus and system including high angle extraction optics

A system having an auxiliary plasma source, disposed proximate the workpiece, for use with an ion beam is disclosed. The auxiliary plasma source is used to create ions and radicals which drift toward the workpiece and may form a film. The ion beam is then used to provide energy so that the ions and radicals can process the workpiece. Further, various applications of the system are also disclosed. For example, the system can be used for various processes including deposition, implantation, etching, pre-treatment and post-treatment. By locating an auxiliary plasma source close to the workpiece, processes that were previously not possible may be performed. Further, two dissimilar processes, such as cleaning and implanting or implanting and passivating can be performed without removing the workpiece from the end station.

System and methods using an inline surface engineering source

A method is provided. The method includes exposing a first material disposed across a first plane on a first substrate to an ion beam to form a first plurality of structures in the first material, the ion beam directed at the first material at an ion beam angle ϑ relative to a surface normal of the first substrate. The first substrate is positioned at a first rotation angle ϕbetween the ion beam and a first vector of the first plurality of structures, the first material is exposed to the ion beam incrementally along a first direction, and exposure of the first material to the ion beam is varied along the first direction to generate a depth variation between the first plurality of structures in the first direction.

Etch improvement

Aspects of the disclosure relate to apparatus for the fabrication of waveguides. In one example, an angled ion source is utilized to project ions toward a substrate to form a waveguide which includes angled gratings. In another example, an angled electron beam source is utilized to project electrons toward a substrate to form a waveguide which includes angled gratings. Further aspects of the disclosure provide for methods of forming angled gratings on waveguides utilizing an angled ion beam source and an angled electron beam source.

Ion beam source for optical device fabrication using a segmented ion source having one or more angled surfaces

Embodiments of the present application generally relate to methods for forming a plurality of gratings. The methods generally include depositing a material over one or more protected regions of a waveguide combiner disposed on a substrate, the material having a thickness inhibiting removal of a grating material disposed on the waveguide combiner when an ion beam is directed toward the substrate, and directing the ion beam toward the substrate. The methods disclosed herein allow for formation of a plurality of gratings in one or more unprotected regions, while no gratings are formed in the protected regions.

Method of forming a plurality of gratings

Embodiments described herein relate to methods and apparatus for forming gratings having a plurality of fins with different slant angles on a substrate and forming fins with different slant angles on successive substrates using angled etch systems and/or an optical device. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle &#x3d1; relative to a surface normal of the substrates and form gratings in the grating material.

Growing community of inventors

Beverly, MA, United States of America

Joseph C Olson