Societe Pour L'etude Et La Fabrication De Circuits Integres Speciaux

Societe Pour L'etude Et La Fabrication Des Circuits Integres Speciaux

Soclete Pour I'etude Et Al Fabrication De Circuits Integres Speciaux

Joseph Borel

Alain Y Roche

Annie Baudrant

A process for manufacturing isolated semi conductor components in a semi conductor wafer of the type used in bipolar technology. In this process, polycrystalline silicon is deposited in a recess in a silicon substrate whose walls are insulated by a silicon nitride layer except for an opening formed in this nitride layer at the bottom of said recess. Then, the polycrystalline silicon is re-epitaxied so as to become monocrystalline silicon by thermal heating from the 'nucleus' formed by the underlying silicon in said opening.

Process for manufacturing isolated semi conductor components in a semi

A process for manufacturing isolated semiconductor components in a semiconductor wafer of the type used in bipolar technology. In this process, polycrystalline silicon is deposited in a recess in a silicon substrate whose walls are insulated by a silicon nitride layer except for an opening formed in this nitride layer at the bottom of said recess. Then, the polycrystalline silicon is recrystallized so as to become monocrystalline silicon by thermal heating from the 'nucleus' formed by the underlying silicon in said opening.

Process for manufacturing isolated semiconductor components in a

Method of fabrication of MOS transistors having electrodes of metallic

A novel MOS transistor structure comprises electrodes of metallic silicide and especially tantalum silicide. In the case of the gate electrode, the silicide is directly in contact with an insulating thin-film layer. In the case of the drain and source electrodes, the silicide is directly in contact with the monocrystalline silicon. The method of fabrication is thus simplified while avoiding the use of polycrystalline silicon.

Growing community of inventors

St. Egreve, France

Joseph Borel