Commissariat a L'energie Atomique

Agence Nationale De Valorisation De La Recherche (anvar)

Joseph Borel

Jacques Robert

Vincent Le Goascoz

Gerard Merckel

Jacques Lacour

Robert Poujois

Luc Audaire

Guy Labrunie

Jean-Claude Deutsch

Bruno Dargent

Louise Peccoud Toupillier

Pierre Baruch

Joel Monnier

The method consists in fabricating an MOS transistor comprising a drain region and a source region separated from each other by a bulk region of opposite doping type relative to the first two regions, in delivering the radiation to be detected into the carrier-collection region of the MOS transistor, in leaving the bulk region at a floating potential and in collecting the drain-source current of the transistor.

Method and device for detecting radiatons

The fabrication of a charge-coupled device consists in forming an insulating layer in the form of a periodic series of insulating steps, in depositing a metallic layer on alternate steps so as to form electrodes, in implanting regions doped with a type opposite to the substrate into the surface of the semiconductor by directing an ion beam through the insulating steps of small thickness which are transparent to the beam, and in connecting each electrode to a control line.

Method of fabrication of a charge-coupled device

In a method and a device for storing analog signals in integrated circuit elements, the memory elements are constituted by field-effect transistors having a number of layers of different dielectrics between the gate and the doped semiconductor substrate of the transistor. After discrete sampling of the analog signal has been performed at N points, the N amplitudes corresponding to the N points are stored in N transistors in the form of a threshold voltage.

Method and device for the storage of analog signals

The invention relates to a method of controlling an optical characteristic of a material and it is concerned also with devices and image-forming means for carrying out the method. The method of control is particularly advantageous in devices comprising a plurality of points distributed in the form of a matrix. The optical characteristic K of the material is controlled by an energization having a magnitude G for a duration t, the values G and t being so selected as a function of the time response K (G, t) of the characteristic K at an energization stage of magnitude G that K (G.sub.O, t.sub.O) is equal to K.sub.O.

Method of controlling an optical characteristic

Asymmetrical potential wells are created in surface zones of a first doped semiconductor forming a substrate and are of greater depth at the downstream end than at the upstream end in order to ensure unidirectional transfer of the minority carriers. Regions localized at one extremity of the surface zones and constituting the potential wells are formed by a second semiconductor having a forbidden band width which is different from that of the first semiconductor.

Charge-coupled device comprising semiconductors having different

Method and device for the integration of analog signals

In a liquid crystal whose molecules have temperature-dependent dielectric anisotropy within a range such that the liquid crystal retains the same phase, the optical properties of a liquid crystal film are controlled by applying an electric field of predetermined frequency to the film and by bringing the temperature of the film to a value within the range mentioned. The dielectric anisotropy then assumes a predetermined value in respect of said frequency and the liquid crystal film assumes a predetermined optical state.

Thermal method for controlling the optical properties of a liquid

Fabrication of a charge-coupled device

In a first step, the semiconductor material is doped in a known manner with impurities having a given conductivity type and a given concentration profile. In a second step, the material is maintained at a high temperature, bombarded with a beam of particles which are accelerated with a given energy so as to penetrate into the crystal during a predetermined time interval. The resultant migration of impurities produces an increase in the impurity concentration irrespective of the sign of the initial concentration gradient within a zone adjacent to the zone of stopping of the particles.

Method for improving the doping of a semiconductor material

A method for controlling an optical characteristic of a material which is intercalated between two electrodes driven by periodic excitation signals having a zero mean value consists in applying to the electrodes signals having the same time-duration and the same recurrence frequency but in which one signal has a phase shift .phi. with respect to the other, the phase shift being modified in order to adjust the optical characteristic.

Method for controlling an optical characteristic of a material and an

In a method and a device for multiplying analog signals in integrated circuit elements, the memory elements are constituted by field-effect transistors having a number of layers of different dielectrics between the gate and the doped semiconductor substrate of the transistor. After discrete sampling of the analog signal has been performed at N points, the N amplitudes corresponding to the N points are stored in N transistors in the form of a threshold voltage. A multiplication of two corresponding terms is performed by recording the signal which is proportional to one sample of a function in the memory of the multiple dielectric layer type and by applying a given voltage to the gate of the transistor so as to generate a signal which is a linear function of the threshold voltage which is in turn a linear function of the writing signal at the input of a multiplier circuit. There is also applied to the multiplier circuit a signal which is a linear function, a sample of another function which is to be multiplied term by term with the first function.

Method and device for the storage and multiplication of analog signals

A liquid crystal cell is made by covering a wafer with an electrode system. A second insulating and transparent wafer is covered with a second system of semi-transparent electrodes. A wall of controlled thickness is deposited on a wafer around a periphery thereof. A metallic thread is deposited on a wafer with the same perimeter as the wall. The wafers are applied to each other and heated to fuse the thread on the top of the wall to join and seal the wafers with a liquid crystal between them within the wall.

Liquid crystal cell

A charge-coupled device in which the storage and tranfer of information in the form of charges consisting of minority carriers are carried out with only two clocks. The device comprises a doped semiconductor substrate coated with an insulating thin film carrying a linear series of conductive electrodes. A variably doped surface region of the substrate creates a potential barrier for the minority carriers upstream of a charge-storage region. The same value of potential is fixed respectively for the odd-numbered electrodes and for the even-numbered electrodes, these values being modified in cycles so as to transfer the charge from each alternate electrode to one of the adjacent electrodes. A method of fabrication of the device consists in forming an insulating film and an assembly of conductive electrodes on a semiconductor substrate and in ion implantation by means of an ion beam in order to increase the doping of the substrate beneath one edge of the electrodes.

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Echirolles, France

Joseph Borel