Applied Materials, Inc.

Joseph A Van Gompel

James Omer L'Heureux

Michael Johnson

Hemant P Mungekar

Andreas Neuber

Maxime Cayer

Ryan T Downey

Tony H Tong

Gino Gerardo Crispieri

John L Koenig

Mike M Huang

The present disclosure relates to systems and methods for detecting anomalies in a semiconductor processing system. According to certain embodiments, one or more external sensors are mounted to a sub-fab component, communicating with the processing system via a communication channel different than a communication channel utilized by the sub-fab component and providing extrinsic sensor data that the sub-fab component is not configured to provide. The extrinsic sensor data may be combined with sensor data from a processing tool of the system and/or intrinsic sensor data of the sub-fab component to form virtual sensor data. In the event the virtual data exceeds or falls below a threshold, an intervention or a maintenance signal is dispatched, and in certain embodiments, an intervention or maintenance action is taken by the system.

Method and system for detecting anomalies in a semiconductor processing system

A method and apparatus for generation of fluorine gas (F2) in situ at the point of use is provided. The portable fluorine generator includes a dilution system disposed within a housing and operable to mix a feed gas comprising fluorine with an inert gas. The portable fluorine generator further includes a plasma reactor unit disposed within the housing and operable to separate fluorine (F2) from the feed gas comprising fluorine.

Portable fluorine generator for on-site calibration

One or more embodiments described herein relate to abatement systems for reducing Brand Clin semiconductor processes. In embodiments described herein, semiconductor etch processes are performed within process chambers. Thereafter, fluorinated greenhouse gases (F-GHGs), HBr, and Clgases exit the process chamber and enter a plasma reactor. Reagent gases are delivered from a reagent gas delivery apparatus to the plasma reactor to mix with the process gases. Radio frequency (RF) power is applied to the plasma reactor, which adds energy and 'excites' the gases within the process chamber. When HBr is energized, it forms Br. Brand Clare corrosive and toxic. However, the addition of HO in the plasma reactor quenches the Brand Clemissions, as the H atoms recombine with the Br atoms and the Cl atoms to form HBr and HCl. HBr and HCl are readily water-soluble and removed through a wet scrubber.

Reduction of Brand Clin semiconductor processes

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Austin, TX, United States of America

Joseph A Van Gompel