Life Technologies Corporation

Osram Opto Semiconductors Gmbh

Invitrogen Corporation

Quantum Dot Corporation

Other

Tdk Electronics Ag

Joseph A Treadway

Eric Tulsky

Joseph August Bartel

Donald A Zehnder

Kari N Haley

Imad Naasani

Roman Rozhkov

John Matthew Mauro

Marc D Schrier

Yongfen Chen

Theo Nikiforov

Joseph M Beechem

Dmitriy Gremyachinskiy

Daniel Mazur

Xinzhan Peng

Eric Welch

Yuri Belosludtsev

Howard Reese

Tommie Lloyd Lincecum

Stephen A Empedocles

Juanita N Kurtin

David J O'Brien

Marcel Pierre Bruchez

Andrew Watson

Brian Theobald

Erik Johansson

Jonathan P Earhart

Maria J Anc

Benjamin Daniel Mangum

Matthew J Carillo

Michael Ignatius

Elena Molokanova

Alexei Savtchenko

James Wyckoff

Peter Chen

Bob Fitzmorris

Weiwen Zhao

Tommie Lloyd Lincecum, Jr

A structure, an optoelectronic device and a method for producing a structure are disclosed. In an embodiment, a structure comprises a first nanoparticle comprising at least one semiconductor material. The first nanoparticle is chromophoric in a first wavelength range and emissive in a second wavelength range. The structure further comprises a plurality of second nanoparticles. The second nanoparticles are non-chromophoric in the first wavelength range and in the second wavelength range.

Structure, optoelectronic device and method for producing a structure

A quantum dot structure is provided, the quantum dot structure comprising: a nanocrystalline core from a first semiconductor material, a nanocrystalline shell from a second semiconductor material on the nanocrystalline core, at least one encapsulation layer on the nanocrystalline shell, wherein functional groups are present within the at least one encapsulation layer and/or on the surface of the at least one encapsulation layer facing away from the nanocrystalline shell, the functional groups being able to chemically react in a reversible manner. Further, a method for producing a quantum dot structure and a light emitting device are provided.

Quantum dot structure, method for producing a quantum dot structure, and light emitting device

A conversion layer, a light emitting device and a method for producing a conversion layer are disclosed. In an embodiment a conversion layer includes light-converting nanocrystals, an encapsulation surrounding the light-converting nanocrystals and ligands bonded to a surface of the encapsulation, wherein encapsulated light-converting nanocrystals are crosslinked by the ligands.

Conversion layer, light emitting device and method of producing a conversion layer

A semiconductor structure, a method for producing a semiconductor structure and a light emitting device are disclosed. In an embodiment a semiconductor structure includes a plurality of discrete encapsulated semiconductor nanoparticles and a plurality of discrete semiconductor free nanoparticles, wherein the discrete encapsulated semiconductor nanoparticles and the discrete semiconductor free nanoparticles form an agglomerate.

Semiconductor structure with nanoparticles and light emitting device having a phosphor material with nanoparticles

A quantum dot structure, a radiation conversion element and a light emitting device are disclosed. In an embodiment a quantum dot structure includes an active region configured to emit radiation, a barrier region surrounding the active region and a trap region spaced apart from the active region, wherein a band edge of the trap region forms a trap configuration with respect to the barrier region for at least one type of charge carrier.

Quantum dot structure having a barrier region and a trap region, radiation conversion element and light-emitting device

A structure and a method for producing a structure are disclosed. In an embodiment a structure includes at least one semiconductor structure comprising at least one semiconductor nanocrystal and a high-density element for increasing a density of the structure, wherein a density of the high-density element is greater than a density of silica, and wherein the structure is configured to emit light.

Structure, methods for producing a structure and optoelectronic device

A structure may include a quantum structure and a barrier layer that may coat the quantum structure. The barrier layer may include aluminum and at least one material that is X1, X2, Si, O, or combinations thereof where X1 and X2 are monovalent positively charged elements and/or divalent positively charged elements. In addition, an agglomerate, a conversion element, and a method of producing a structure are disclosed.

Structure, agglomerate, conversion element and method of producing a structure

A semiconductor nanocrystal structure may include a core, an inner absorption shell surrounding the core, at least one emission shell surrounding the inner absorption shell, and an outer absorption shell surrounding the emission shell(s). The core may include a different material than the optional inner absorption shell and/or the outer absorption shell. The core may be less absorbent to electromagnetic radiation as compared to the optional inner absorption shell and/or the outer absorption shell. An optoelectronic device may include the semiconductor nanocrystal structure.

Semiconductor nanocrystal structure and optoelectronic device

Disclosed herein are conjugates comprising a biomolecule linked to a label that have biological activity and are useful in a wide variety of biological applications. For example, provided herein are polymerase-nanoparticle conjugates including a polymerase linked to a nanoparticle, wherein the conjugate has polymerase activity. Such conjugates can exhibit reduced aggregation and improved stochiometries wherein the average biomolecule:nanoparticle ratio approaches or equals 1:1. Also disclosed herein are improved methods for preparing such conjugates, and methods and systems for using such conjugates in biological applications such as nucleotide incorporation, primer extension and single molecule sequencing.

Conjugates of biomolecules to nanoparticles

A population of bright and stable nanocrystals is provided. The nanocrystals include a semiconductor core and a thick semiconductor shell and can exhibit high extinction coefficients, high quantum yields, and limited or no detectable blinking.

Nanocrystals with high extinction coefficients and methods of making and using such nanocrystals

A semiconductor structure and a light-emitting device having a light-emitting diode and a plurality of semiconductor structures are disclosed. In an embodiment, the semiconductor structure includes an elongated seed particle including a first semiconductor material, wherein the seed particle has an aspect ratio of greater than 2.0, and wherein the semiconductor structure is part of or forms a quantum dot.

Semiconductor structure and light-emitting device with semiconductor structures

Methods for preparing core/shell nanocrystals are provided, using mismatched shell precursors and an electron transfer agent to control the nucleation and growth phases of particle formation. One method includes forming a reaction mixture comprising a plurality of nanocrystals, a first shell precursor, a second shell precursor, a weak electron transfer agent, and optionally a solvent, wherein, the first shell precursor and the second shell precursor have different oxidation states; and heating the reaction mixture to a temperature high enough to induce formation of the shell on each of the plurality of nanocrystals.

Methods for preparation of nanocrystals using a weak electron transfer agent and mismatched shell precursors

Growing community of inventors

Portland, OR, United States of America

Joseph A Treadway