Honeywell International Inc.

Oluma, Inc.

Otuma, Inc.

Joseph A Levert

Shyama P Mukherjee

Daniel L Towery

Timothy Clyde Collins

Donald Debear

Vilas Koinkar

Joannes M Costa

Fan Zhang

Denis H Endisch

Michael Talmadge

Fabrication techniques for polishing fibers engaged in grooves on substrates. A protection template assembly is disclosed to protect the unpolished portions of fibers. Chemical mechanical polishing may be used to achieve high fabrication throughput and high polishing uniformity. Optical monitoring may be used to monitor the polishing in real time.

Fabrication of devices with fibers engaged to grooves on substrates

A method of placing a fiber on a substrate includes holding at least one fiber under tension, aligning the held fiber with a groove formed into a substrate, moving the substrate towards the fiber to place the fiber in the groove, fixing the position of the fiber under tension in the groove, and releasing the fiber.

Tension-assisted mounting of fibers on a substrate

The present invention relates to the planarization of surfaces as typically encountered in the fabrication of integrated circuits, particularly copper conductors and Ta/TaN barrier layers encountered in damascene and dual damascene interconnects. The present invention describes planarization methods for Cu/Ta/TaN interconnects, typically making use of a viscous overlayer tending to dwell in regions of lower surface topography, protecting said lower regions from etching by a combination of chemical and mechanical effects. In some embodiments, the viscous overlayer contains species that hinder removal of copper from regions of the surface in contact with the viscous layer. Such species may be a substantially saturated solution of copper ions among other additives, thereby hindering the dissolution of interconnect copper into the protective overlayer. In some embodiments of the present invention, the viscous overlayer may be added prior to the introduction of etchant to the wafer surface, or both etchant and viscous overlayer may be introduced substantially simultaneously, typically as the wafer is spun during planarization.

Viscous protective overlayers for planarization of integrated circuits

Chemical mechanical planarization or spin etch planarization of surfaces of copper, tantalum and tantalum nitride is accomplished by means of the chemical formulations of the present invention. The chemical formulations may optionally include abrasive particles and which may be chemically reactive or inert. Contact or non-contact CMP may be performed with the present chemical formulations. Substantially 1:1 removal rate selectivity for Cu and Ta/TaN is achieved.

Composition for chemical mechanical planarization of copper, tantalum and tantalum nitride

An electronic component contemplated comprises a) a substrate layer, b) a dielectric layer coupled to the substrate layer, c) a barrier layer coupled to the dielectric layer, d) a conductive layer coupled to the barrier layer, and e) a protective layer coupled to the conductive layer. The electronic component contemplated herein can be produced by a) providing a substrate; b) coupling a dielectric layer to the substrate; c) coupling a barrier layer to the dielectric layer; d) coupling a conductive layer to the barrier layer; and e) coupling a protective layer to the conductive layer. The protective layer may then be cured to a desirable hardness. A method of planarizing a conductive surface of an electronic component may comprise a) introducing or coupling a protective layer onto a conductive layer; b) dispersing the protective layer across the conductive layer; c) curing the protective layer; d) introducing an etching solution onto the conductive layer; and e) etching the conductive surface to substantial planarity.

Planarizers for spin etch planarization of electronic components

An apparatus for planarizing or patterning a dielectric film on a substrate is provided. The apparatus includes a press for applying contact pressure to an operably connected compression tool. The compression tool has a working face that is planar or patterned. A controller for regulating the position, timing and force applied by the compression tool to the dielectric film is also provided. There is also provided a support, with an optional workpiece holder for supporting the substrate and dielectric film during contact with the compression tool. Methods of using the apparatus, as well as planarized and/or patterned dielectric films are also provided.

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Vista, CA, United States of America

Joseph A Levert