Siemens Aktiengesellschaft

Infineon Technologies Ag

Other

Josef-Matthias Gantioler

Jenoe Tihanyi

Rainald Sander

Holger Heil

Chihao Xu

Ludwig Leipold

Frank Auer

Jens-Peer Stengl

Alfred Porst

Helmut Gassel

Frank Klotz

Martin M&auml;rz

Rainer Bergmann

Hans Stut, Deceased

Norbert Krischke

The power switch has considerably reduced common-mode interference and relatively reduced circuit complexity. The power switch is formed of a semiconductor chip on a leadframe. A first terminal of the semiconductor chip is connected to the active potential and a second terminal for inactive potential is connected to the leadframe. The second terminal is either the drain of a transistor or the anode of a diode.

EMC-optimized power switch

The polarity reversal protection circuit provides for a semiconductor switch (,) to be connected in parallel with the polarity reversal protection diode (,), which switch is switched off in the event of polarity reversal and is switched on during normal operation.

Polarity reversal protection circuit

In order to supply a load, e.g. an electric motor, with current bidirectionally, an H bridge configuration containing four switching transistors is used. In order to attain outstanding electrical conductivity and also thermal conductivity, a half-bridge configuration containing two transistors of opposite conductivity types is constructed. Each of the transistors is realized on a chip, the rear sides of which chips are seated on a common conductive support preferably produced from metal. Each housing is equipped with a support of this type. The rear side of each of the two chips is formed from a drain or source electrode of the transistors. A load can be connected to the support. Two half-bridge configurations can advantageously be combined to form an H bridge configuration.

Half-bridge configuration

An integrated comparator includes an inverter with a first depletion FET and a first enhancement FET, and a series circuit with a second depletion FET and a second enhancement FET. The second depletion and enhancement FETs are connected in series between a first supply voltage terminal and a first input terminal. A node between the second enhancement and depletion FETs is connected to the gate terminal of the first enhancement FET. The transfer characteristic curve of the second enhancement FET is steeper than the transfer characteristic curve of the first enhancement FET. All of the MOSFETs are of the same channel type. The voltage to be compared is connected between the second enhancement FET and ground. The switching point is determined by the transfer characteristics of the two enhancement FETs.

Integrated comparator circuit with four MOSFETS of defined transfer

A temperature sensor contains a bipolar transistor adjacent a cell array of a power MOSFET or IGBT. In order to detect temperature independently of a voltage drop across the power semiconductor component, a zone of the same conduction type is disposed between the cell array and a base zone. That zone is connected to a fixed bias voltage.

Field effect-controllable power semiconductor component with temperature

A comparator circuit includes a series circuit having a first MOSFET and a second MOSFET. An inverter has a third MOSFET and a fourth MOSFET. A node between the first and second MOSFETs is connected to a gate terminal of the fourth MOSFET. An input voltage is applied between ground and the second MOSFET. A series circuit of a fifth MOSFET and a Zener diode polarized in the blocking direction is connected parallel to the fourth MOSFET. A response threshold of the comparator circuit is defined by adjusting a resistance of the Zener diode occurring in the reverse direction. The resistance is adjusted through the use of a voltage pulse that can be applied to a terminal connected to a cathode of the Zener diode.

Integratable comparator circuit with adjustable response threshold

An integrated power semiconductor component includes a substrate of a first conduction type. At least one first region of a second conduction type is embedded in the substrate and at least one second region of the second conduction type is embedded in the substrate. A substrate contact supplies a supply voltage. Contact-making semiconductor components are embedded in the first region and in the second region. At least a portion of the semiconductor components in the first region control at least a portion of the semiconductor components in the second region. A third region of the second conduction type is disposed between the first region and the second region, and the first region and the third region are at different potentials.

Integrated power semiconductor component having a substrate with a

The temperature of a power semiconductor component is monitored by feeding the block current of a bipolar transistor which is in thermal contact with the component to an amplifying current mirror. The output signal of the current mirror is compared with a reference current. If the mirrored current is greater than the reference current, then the system produces a corresponding output. Temperatures of the power semiconductor component below 140.degree. C. can be reliably detected.

Circuit configuration for monitoring the temperature of a power

MOSFET and IGBT components protected against overvoltage by a limiting diode inserted between drain or, respectively, collector terminal and gate terminal are provided. A freewheeling diode connected to the component having a limiting diode with a breakdown voltage that is lower than the breakdown voltage of the freewheeling diode by a defined amount is provided. This over-voltage protection can be achieved in a simple way by integrating the limiting diode into the semiconductor body of the freewheeling diode and by a corresponding arrangement of the anode zone of the limiting diode.

Semiconductor component arrangement for overvoltage protection of

A control circuit for an MOS semiconductor component having gate and source terminals has a load connected in series with the source terminal. A voltage source at fluctuating potential has first and second terminals. A first controllable semiconductor switch has a control input and is connected between the first terminal of the voltage source and the gate terminal of the MOS semiconductor component. The second terminal of the voltage source is connected to the source terminal of the MOS semiconductor component. A second switch is controllable by an input signal and has first and second load terminals. A line is connected to a fixed potential and to the first load terminal of the second switch. The second load terminal of the second switch is switched from a first to a second potential as a function of the input signal. The first and second potentials are between potentials of the first and second terminals of the voltage source. The first and second potentials are applied to the control input of the first switch for making the first switch conducting whenever an input signal is applied.

Control circuit for an MOS semiconductor component with a source-side

A thyristor is controlled by a phototransistor whose photo current is reduced by a MOSFET if the thyristor voltage surpasses a prescribed value. The MOSFET is controlled by two current supplies. The first current supply is connected between a gate terminal and a connecting terminal of the thyristor. The second current supply is connected between the gate and source of the MOSFET. The maximum current capacity of the first current supply is greater than the maximum current capacity of the second current supply.

Zero point detector for an optically controllable thyristor

A semiconductor component which comprises a planar structure which has a channel stopper 7 formed at one edge and a field electrode which covers a pn-junction 3 of the planar zones adjoining the edge 4. The blocking voltage can be increased by providing a channel stopper field plate 19 arranged over the channel stopper and an anode field plate 18 arranged over the field electrode and these field plates are spaced a greater distance from the surface 8 of the semiconductor body between the electrodes 18 and 19 and they have over the channel stopper electrode and the gate electrode.

Growing community of inventors

Munchen, Germany

Josef-Matthias Gantioler