Siemens Aktiengesellschaft

Josef Kotschy

Christa Grabmaier

Walter Voelkl

August Lerchenberger

Recrystallized silicon plates are readily removed from a carrier member after melting and recrystallization, the carrier member being composed of a material that is not appreciably wettable by molten silicon, through the use of a parting agent between the silicon and the carrier in solid form as a powder or a raw foil. Fine quartz sand, very fine grained silicon powder, or quartz glass fiber fabric can be employed as the parting agent. The method is employed for the inexpensive manufacture of self-supporting silicon crystal plates for solar cells and allows throughput drawing rates of greater than 1 m.sup.2 /min.

Method for the manufacture of large area silicon crystal bodies for

A capacitor for AC voltage applications consists of staggered wound layers of synthetic material films metallized on both sides. The metallizations are carried out on the two sides of the films with differing thicknesses, wherein at least the greater thickness metallization is contacted by means of Schoop layers. The exposed edges on the two sides of the films are provided with different widths, wherein the difference corresponds with a staggering of the films during winding.

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Unterhaching, Germany

Josef Kotschy