Infineon Technologies Ag

Infineon Technologies Austria Ag

Infineon Technology Austria Ag

Josef Georg Bauer

Gerhard Schmidt

Anton Mauder

Elmar Falck

Hans-Joachim Schulze

Helmut Strack

Werner Schustereder

Reiner Barthelmess

Oliver Humbel

Heinrich Brunner

Gerhard Miller

Alfred Porst

Mario Barusic

Hans Joachim Schulze

Hans Millonig

Holger Rüthing

A power semiconductor device has a semiconductor body having a first surface and a second surface that runs substantially parallel to the first surface. A first metallization is arranged on the first surface. A second metallization is arranged on the second surface. The semiconductor body includes an n-doped first semiconductor region spaced apart from the first metallization and having a first maximum doping concentration, an n-doped second semiconductor region having a second maximum doping concentration higher than the first maximum doping concentration and adjoining the first semiconductor region, and a third semiconductor region in ohmic contact with the second metallization, arranged between the second metallization and the second semiconductor region, and adjoining the second semiconductor region. The second semiconductor region is made of a semiconductor material which includes electrically active chalcogen impurities as donors. At least 90% of the electrically active chalcogen impurities form isolated defects in the semiconductor material.

Bipolar semiconductor device and method of manufacturing thereof

Disclosed are a method and a semiconductor device. The method includes implanting recombination center atoms via a first surface into a semiconductor body, and causing the implanted recombination center atoms to diffuse in the semiconductor body in a first diffusion process.

Adjusting the charge carrier lifetime in a bipolar semiconductor device

A method includes implanting recombination center atoms via a first surface into a semiconductor body and causing the implanted recombination center atoms to diffuse in the semiconductor body in a first diffusion process.

Method of producing a vertically inhomogeneous platinum or gold distribution in a semiconductor substrate with a first and a second surface opposite the first surface, with diffusing platinum or gold into the semiconductor substrate from one of the first and second surfaces of the semiconductor substrate, removing platinum- or gold-comprising residues remaining on the one of the first and second surfaces after diffusing the platinum or gold, forming a phosphorus- or boron-doped surface barrier layer on the first or second surface, and heating the semiconductor substrate for local gettering of the platinum or gold by the phosphorus- or boron-doped surface barrier layer.

Method of producing a vertically inhomogeneous platinum or gold distribution in a semiconductor substrate and in a semiconductor device

Method of producing a vertically inhomogeneous platinum or gold distribution in a semiconductor substrate with a first and a second surface opposite the first surface, with diffusing () platinum or gold into the semiconductor substrate from one of the first and second surfaces of the semiconductor substrate, removing () platinum- or gold-comprising residues remaining on the one of the first and second surfaces after diffusing the platinum or gold, forming () a phosphorus- or boron-doped surface barrier layer on the first or second surface, and heating () the semiconductor substrate for local gettering of the platinum or gold by the phosphorus- or boron-doped surface barrier layer.

A semiconductor device includes an active region with a vertical drift path of a first conduction type and with a near-surface lateral well of a second, complementary conduction type. In addition, the semiconductor device has an edge region surrounding the active region. This edge region has a variable lateral doping material zone of the second conduction type, which adjoins the well. A transition region in which the concentration of doping material gradually decreases from the concentration of the well to the concentration at the start of the variable lateral doping material zone is located between the lateral well and the variable lateral doping material zone.

Semiconductor device with a semiconductor body and method for its production

A vertical power semiconductor component, e.g. a diode or an IGBT, in which there are formed, on the rear side of a substrate, a rear side emitter or a cathode emitter and, over that, a rear side metal layer that at least partly covers the latter, is defined by the fact that, in the edge region of the component, provision is made of injection attenuation means for reducing the charge carrier injection from the rear side emitter or the cathode emitter into said edge section.

Vertical power semiconductor component

A power semiconductor components has stop zones. In order to optimize the static and dynamic losses of the power semiconductor components, the stop zone is provided with donors which have at least one donor level which lies within the band gap of silicon and is at least 200 meV away from the conduction band edge of silicon.

Growing community of inventors

Markt Indersdorf, Germany

Josef Georg Bauer