Xerox Corporation

Josef E Jedlicka

Brian T Ormond

Paul Allen Hosier

Alain E Perregaux

Jagdish C Tandon

Kraig A Quinn

Thomas Grimsley

Gaurav Sharma

Robert Paul Herloski

Debra S Vent

David Jon Metcalfe

Stanley John Wallace

Paul S Bonino

Stephen C Corona

Joseph P Taillie

Wilbur M Peck

Ewart O LeBlanc

Nicholas J Salatino

Fred F Wilczak, Jr

Dawn M Williams-Fuller

Judith A Masseth

Kimberly R Page

A photosensitive apparatus including a full width array of photosensors and a first photosensor chip. The first photosensor chip including a linear array of photosensors having a plurality of pixels arranged in a long direction and a linear variable filter adapted to transmit at least ten unique bandwidths of wavelengths of light along a length of the linear variable filter where the linear variable filter is fixedly secured to the linear array. Each respective pixel receives a unique bandwidth of wavelengths of light as a light passes through the linear variable filter and the length is aligned with the long direction. The full width array of photosensors is arranged perpendicular to a process direction of a printing device.

In-line image sensor in combination with linear variable filter based spectrophotometer

An architecture and manufacturing method for photosensitive chips, such as used in office equipment and digital cameras, involves creating grooves between chip areas in a wafer, and then placing a light-transmissive planar layer over the main surface of the wafer. The planar layer, which may be acrylic-based, creates a substantially planar surface over both the photosites in the chip areas and the grooves. The planar layer in turn supports one or more light-transmissive filtering layers. The arrangement avoids damage to the filtering layers when the wafer is diced along the grooves.

Color filter configuration for a silicon wafer to be diced into photosensitive chips

The present disclosure relates that by modifying chip die dicing methodology to a U-groove profile from a V-groove profile by modifying the second etch step to be a dry etch instead of a wet etch results in a direct cost savings by eliminating a more expensive process step, as well as the need for stripping the developed photoresist layer. Furthermore, going to a U-groove profile accomplishes additional indirect and greater cost savings resulting from increased process throughput, improved yield, and reduced metal layer defects.

Use of a U-groove as an alternative to using a V-groove for protection against dicing induced damage in silicon

A photosensitive imaging device for recording images across the entire visible spectrum includes a set of photosensors which have a peak response around the orange part of the spectrum, about 600 nm. The peak response is obtained by combining responses of, in one case, photosensors associated with a filter which admits red or infrared wavelengths and longer and photosensors associated with a filter which admits orange wavelengths and longer. In another case, the photosensor is structured to attenuate longer wavelengths, which, in combination with a filter which admits orange and longer wavelengths, can simulate a peak behavior around the orange part of the spectrum.

Photosensitive imaging apparatus sensitive to orange light

The present invention generally relates to a digital scanner for scanning images. More specifically, the present invention is directed to a method and apparatus for enhancing the quality of scanned images obtained by filtering out the infrared component of digital data to provide enhanced digital images.

Infrared correction in color scanners

A color space transformation device includes a sensor bar. The sensor bar includes a plurality of sensor chips. Each sensor chip scans a unique section of an original image to produce first data in a first color space. A memory means stores groups of coefficients. Each group of coefficients corresponds to one of the sensor chips. A processor independently transforms each of the sections of the first data to a respective section of a second data. The transformation is performed as a function of one of the groups of coefficients corresponding to the sensor chip which produced the first data.

Architecture for color space transformation to compensate for relative chip-to-chip spectral variations on a butted full-width array sensor bar

The present invention relates to electro optical devices with a reduced filter thinning on the edge pixels and a method for reducing the thinning of filter layers on the pixels closest to the edge of an electro optical device such as a photosensitive chip, as would be used, for example, in a full-color digital copier or scanner. A semiconductor wafer includes a main surface defining a plurality of chip areas and tab regions separated by grooves, wherein the chip areas include inner photosites, outer photosites and bonding pads. A plurality of dams are deposited over the main surface in the tab regions, and a clear layer is deposited over the main surface exclusive of the bonding pads. Alternatively, a clear layer is deposited over the main surface exclusive of the bonding pads, and a plurality of tabs is then deposited in the tab regions on the main surface. A first primary color filter layer is deposited over at least first inner photosite and first outer photosite, and the first primary color filter layer transmits a primary color.

Electro optical devices with reduced filter thinning on the edge pixel photosites and method of producing same

The present invention relates to a sensor cover glass for covering photosensitive chips for generating electrical signals from an original image, as would be found for example in a digital scanner, copier, facsimile machine, or other digital imaging device or system. More specifically, the present invention relates to providing a sensor cover glass with an infrared filter material for blocking infrared light from reaching the photosensitive chips. This system is particularly applicable to color input imaging devices or systems.

Sensor cover glass with infrared filter

The present invention relates to semiconductor devices with a reduced filter thinning of outer photosites and a method for reducing the thinning of filter layers of the outer photosites. A semiconductor device includes a main surface including a plurality of photosites and bonding pads defined in the main surface, wherein the photosites include inner photosites and outer photosites. The semiconductor device further includes a clear layer deposited over the main surface exclusive of the bonding pads and outer photosites, and a first primary color filter layer deposited over at least first inner photosite and first outer photosite, the first primary color filter transmitting a primary color.

Semiconductor chips, such as photosensor arrays for a full-page-width scanner or printhead chips for a full-page-width ink-jet printer, are mounted on a substrate to maintain reasonably consistent spacing among adjacent chips. To remove a defective chip from the array, the substrate is urged evenly against a work surface defining a convex bow. Alternately, back-cuts are provided along abutting edges of the chips, and the silicon around these back-cuts can be sawed away to space defective chips from neighboring good chips.

Replacing semiconductor chips in a full-width chip array

Semiconductor chips for use in a chip array assembly for scanning of hard-copy images include rows of photosensors, each row of photosensors having a polyimide filter layer for passing one primary color. In addition to the photosensors, a reflective area is provided on the chip, with filter portions provided on the reflective area. The filter portions are created at the same time as the filter layers placed on the photosensors. The filter layers disposed on the reflective area can be used as test sites for determining the light transmissivity of the filter layers on the photosensors.

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Rochester, NY, United States of America

Josef E Jedlicka