Advanced Technology Materials, Inc.

Entegris, Inc.

Other

Jose I Arno

Mark R Holst

J Donald Carruthers

Michael J Wodjenski

W Karl Olander

Glenn M Tom

Dennis F Brestovansky

Paul J Marganski

Joseph D Sweeney

Robert E Kaim

James A Dietz

Rebecca Faller

Ray Dubois

Edward A Sturm

Luping Wang

Peng Zou

Kristy L Zaleta

Chongying Xu

Bryan Clark Hendrix

Peter C Van Buskirk

John N Gregg

James V McManus

Steven M Bilodeau

Scott L Battle

Frank DiMeo, Jr

Karl E Boggs

Donn Naito

Shaun M Wilson

Jeffrey W Neuner

Steven J Hultquist

John M Cleary

Steven E Bishop

Philip A Moroco

Brian Bobita

Judith A Moroco, Legal Representative

Michael W Hayes

Douglas Edwards

Phillip A Moroco

Thomas H Baum

Oleg Byl

Sharad N Yedave

Steven M Lurcott

Joseph Robert Despres

Gregory T Stauf

Scott Lane

Kent H Carpenter

David James Eldridge

Jeffrey J Homan

Jason Deseve

Jeff Lorelli

Sam Yee

Shkelqim Letaj

Karl M Olander

Apparatus and method for volatilizing a source reagent susceptible to particle generation or presence of particles in the corresponding source reagent vapor, in which such particle generation or presence is suppressed by structural or processing features of the vapor generation system. Such apparatus and method are applicable to liquid and solid source reagents, particularly solid source reagents such as metal halides, e.g., hafnium chloride. The source reagent in one specific implementation is constituted by a porous monolithic bulk form of the source reagent material. The apparatus and method of the invention are usefully employed to provide source reagent vapor for applications such as atomic layer deposition (ALD) and ion implantation.

Solid precursor-based delivery of fluid utilizing controlled solids morphology

A system () for delivery of dilute fluid, utilizing an active fluid source (), a diluent fluid source (), a fluid flow metering device () for dispensing of one of the active and diluent fluids, a mixer () arranged to mix the active and diluent fluids to form a diluted active fluid mixture, and a monitor () arranged to sense concentration of active fluid and/or diluent fluid in the diluted active fluid mixture, and responsively adjust the fluid flow metering device () to achieve a predetermined concentration of active fluid in the diluted active fluid mixture. A pressure controller () is arranged to control flow of the other of the active and diluent fluids so as to maintain a predetermined pressure of the diluted active fluid mixture dispensed from the system. The fluid dispensed from the system then can be adjustably controlled by a flow rate controller, e.g., a mass flow controller, to provide a desired flow to a fluid-utilizing unit, such as a semiconductor process tool. An end point monitoring assembly is also described, for switching fluid sources () to maintain continuity of delivery of the diluted active fluid mixture.

Apparatus and process for integrated gas blending

A fluid storage and dispensing apparatus including a fluid storage and dispensing vessel having a rectangular parallelepiped shape, and an integrated gas cabinet assembly including such fluid storage and dispensing apparatus and/or a point-of-use ventilation gas scrubber in the vented gas cabinet. By the use of physical adsorbent and chemical sorbent media, the gas cabinet can be enhanced in safety of operation, e.g., where the process gas supplied from the gas cabinet is of a toxic or otherwise hazardous character.

Rectangular parallelepiped fluid storage and dispensing vessel

Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry.

Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation

Apparatus and method for monitoring a vapor deposition installation in which a gas mixture can undergo gas phase nucleation (GPN) and/or chemically attack the product device, under process conditions supportive of such behavior. The apparatus includes a radiation source arranged to transmit source radiation through a sample of the gas mixture, and a thermopile detector assembly arranged to receive output radiation resulting from interaction of the source radiation with the gas mixture sample, and to responsively generate an output indicative of onset of the gas phase nucleation and/or chemical attack when such onset occurs. Such monitoring apparatus and methodology is useful in tungsten CVD processing to achieve high rate tungsten film growth without GPN or chemical attack.

TPIR apparatus for monitoring tungsten hexafluoride processing to detect gas phase nucleation, and method and system utilizing same

An adsorption structure is described that includes at least one adsorbent member formed of an adsorbent material and at least one porous member provided in contact with a portion of the adsorbent member to allow gas to enter and exit the portion of the adsorbent member. Such adsorption structure is usefully employed in adsorbent-based refrigeration systems. A method also is described for producing an adsorbent material, in which a first polymeric material provided having a first density and a second polymeric material is provided having a second density, in which the second polymeric material is in contact with the first polymeric material to form a structure. The structure is pyrolyzed to form a porous adsorbent material including a first region corresponding to the first polymeric material and a second region corresponding to the second polymeric material, in which at least one of the pore sizes and the pore distribution differs between the first region and the second region.

Component for solar adsorption refrigeration system and method of making such component

A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part. Particularly preferred gas-phase reactive materials utilized comprise gaseous compounds such as XeF, XeF, XeF, NF, IF, IF, SF, CF, F, CF, KrF, Cl, HCl, ClF, ClO, NF, NF, NF, NFH, NHF, HOBr, Br, CF, CF, CF, CHF, CHF, CHF, COF, HF, CHF, CHF, CHF, CHF, CHF, CF, and organochlorides such as COCl, CCl, CHCl, CHCland CHCl.

Cleaning of semiconductor processing systems

An adsorption structure is described that includes at least one adsorbent member formed of an adsorbent material and at least one porous member provided in contact with a portion of the adsorbent member to allow gas to enter and exit the portion of the adsorbent member. Such adsorption structure is usefully employed in adsorbent-based refrigeration systems. A method also is described for producing an adsorbent material, in which a first polymeric material is provided having a first density and a second polymeric material is provided having a second density, in which the second polymeric material is in contact with the first polymeric material to form a structure. The structure is pyrolyzed to form a porous adsorbent material including a first region corresponding to the first polymeric material and a second region corresponding to the second polymeric material, in which at least one of the pore sizes and the pore distribution differs between the first region and the second region.

Fluid storage and dispensing systems, and processes for supplying fluids for use thereof. Various arrangements of fluid storage and dispensing systems are described, involving permutations of the physical sorbent-containing fluid storage and dispensing vessels and internal regulator-equipped fluid storage and dispensing vessels. The systems and processes are applicable to a wide variety of end-use applications, including storage and dispensing of hazardous fluids with enhanced safety. In a specific end-use application, reagent gas is dispensed to a semiconductor manufacturing facility from a large-scale, fixedly positioned fluid storage and dispensing vessel containing physical sorbent holding gas at subatmospheric pressure, with such vessel being refillable from a safe gas source of refill gas, as disclosed herein.

Fluid storage and dispensing systems, and fluid supply processes comprising same

A process system adapted for processing of or with a material therein. The process system includes: a sampling region for the material; an infrared photometric monitor constructed and arranged to transmit infrared radiation through the sampling region and to responsively generate an output signal correlative of the material in the sampling region, based on its interaction with the infrared radiation; and process control means arranged to receive the output of the infrared photometric monitor and to responsively control one or more process conditions in and/or affecting the process system.

Photometrically modulated delivery of reagents

A fluid storage and dispensing vessel having associated therewith a colorimetric member that is effective to change color in exposure to leakage of a gas contained in the vessel. The colorimetric member may be constituted by a film, e.g., of a shrink-wrap character, that contains or is otherwise associated with a colorimetric agent undergoing color change in exposure to fluid leaking from the vessel. Such shrink-wrap film may be applied to a portion of the vessel susceptible to leakage, or alternatively to the entire vessel, so that the film is colorimetrically effective to indicate the occurrence of a leakage event by visually perceptible change of color.

Fluid storage and dispensing vessels having colorimetrically verifiable leak-tightness and method of making same

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Brookfield, CT, United States of America

Jose I Arno