Advanced Micro Devices Corporation

Jose Hulog

Mehrdad Mahanpour

Mohammad Massoodi

Xia Li

Joseph Vu

A method and system for deprocessing a semiconductor device is disclosed. The semiconductor device has a plurality of structures and an intermetal dielectric layer. The method and system include anisotropically plasma etching the intermetal dielectric layer at an oblique angle and rotating the semiconductor device during the plasma etch to reduce or eliminate build up of a material on the plurality of structures due to the plasma etch of the intermetal dielectric layer. In another aspect the method and system include a semiconductor device deprocessed using the method in accordance with the present invention. In another aspect, the present invention includes a system for deprocessing the semiconductor device.

Method and system for reducing polymer build up during plasma etch of an intermetal dielectric

An automatic decapsulation system for a device is disclosed. The system comprises an etch plate, an etch head, a sheet coupled to the etch head, a rubber gasket disposed between the etch head and the sheet, and an integrated spacer and protection plate for securing the device without damaging the backside of the device during decapsulation. In one embodiment of the present invention, the integrated spacer and protection plate is adjustable to accommodate devices of varying sizes.

Automatic decapsulation system utilizing an integrated spacer/protection plate

An automatic decapsulation system for a device is disclosed. The system comprises an etch plate, an etch head, an acid resistant, high heat endurance and flexible sheet coupled to the etch plate, and a rubber gasket disposed between the sheet and the etch head. The sheet provides a precise etch window and a self-aligning gasket for the device. The rubber gasket creates a tight seal between the device, the sheet, and the etch head. A system in accordance with the present invention utilizes an acid resistant, high heat endurance and flexible sheet in combination with a rubber gasket to seal the device for decapsulation and to provide a well-defined etch window. In addition, the sheet being utilized as the gasket is also utilized as the fixture, thereby eliminating the need to align the gasket to the metal fixture utilized in the conventional system.

Automatic decapsulation system utilizing an acid resistant, high heat endurance and flexible sheet coupled to a rubber gasket and a method of use

A method and system for removing a die from a semiconductor package is disclosed. The semiconductor package includes the die and a ceramic base. The die has a first face, a second face and a plurality of sides. The second face of the die is coupled with the ceramic base. The method and system include covering at least the first face and a portion of the plurality of sides of the die with a hard wax and encapsulating the hard wax and at least a first portion of the ceramic base in a resin. The method and system also include removing at least a second portion of the ceramic base to expose the second face of the die and removing the hard wax to free the die.

Method and system for removing a die from a semiconductor package

A system and method for detecting a type of a short of a plurality of types of shorts in a circuit in a semiconductor device is disclosed. The circuit includes a plurality of power supply lines and a plurality of ground lines. The short is between at least one of the plurality of power supply lines and at least one of the plurality of ground lines. In one aspect, the method and system include providing a library including a plurality of sets of current-voltage characteristics. Each of the plurality of sets of current-voltage characteristics is for a particular type of short of the plurality of types of shorts. In this aspect, the method and system further include measuring a particular set of current-voltage characteristics of the semiconductor device and comparing the particular set of current-voltage characteristics to the plurality of sets of current-voltage characteristics in the library. The type of short may be determined based on the comparison between the particular set of current-voltage characteristics and the plurality of sets of current-voltage characteristics in the library. In another aspect, the method and system provide a tool for detecting the type of a short. In this aspect, the method and system include creating a plurality of types of shorts in a functioning semiconductor device, measuring a plurality of sets of current-voltage characteristics for the functioning semiconductor device, and saving the plurality of sets of current-voltage characteristics in a library.

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San Jose, CA, United States of America

Jose Hulog