Applied Materials, Inc.

Jose Angelo Olave

Ganesh Balasubramanian

Deenesh Padhi

Yue Chen

Xinhai Han

Zhijun Jiang

Daemian Raj Benjamin Raj

Nikhil Sudhindrarao Jorapur

Hidehiro Kojiri

Vu Ngoc Tran Nguyen

Chuan Ying Wang

Arkajit Roy Barman

Miguel S Fung

Thian Choi Lim

A method of forming a film stack with reduced defects is provided and includes positioning a substrate on a substrate support within a processing chamber and sequentially depositing polysilicon layers and silicon oxide layers to produce the film stack on the substrate. The method also includes supplying a current of greater than 5 ampere (A) to a plasma profile modulator while generating a deposition plasma within the processing chamber, exposing the substrate to the deposition plasma while depositing the polysilicon layers and the silicon oxide layers, and maintaining the processing chamber at a pressure of greater than 2 Torr to about 100 Torr while depositing the polysilicon layers and the silicon oxide layers.

Method of forming film stacks with reduced defects

Growing community of inventors

Angeles, Philippines

Jose Angelo Olave