At&t Bell Laboratories

Lucent Technologies Inc.

At+t Corp.

Jose A Lourenco

Daniel Brasen

Michael A DiGiuseppe

Subhash Mahajan

Mindaugas Fernand Dautartas

Gustav Edward Derkits, Jr

Vassilis G Keramidas

Ramesh R Varma

A compliant layer metallization for relieving thermal and mechanical stress developed between a semiconductor and a semiconductor submount. The compliant layer metallization includes a compliant layer, a wetting layer and a barrier layer. The compliant layer provides thermal and mechanical stress relief. The wetting layer ensures adequate wetting during soldering. The barrier layer prevents diffusion of bonding material into the compliant layer and/or into the semiconductor during solder-bonding. The compliant layer metallization design promotes ease of manufacturing.

Complaint layer metallization

An LED has both its p and n bonding pads on the p side of the wafer for simultaneous solder bump alignment and electrical connection of the LED with a device carrier. A groove is formed dividing the p material of the device into an active region and an inactive region. The groove also provides a path for the device's n-contact, which extends from the n-material at the base of the groove, up the side of the groove, to the n bonding pad on the surface of the inactive p material.

Structure of and method for manufacturing an LED

In the liquid phase epitaxy growth of Group III-V compound semiconductors using boat-slider apparatus, melt-carry-over is essentially eliminated by prebaking the metallic solvent (e.g., In shot) in the boat to form ingots and then etching the ingots in dilute nitric or hydrochloric acid prior to adding solutes (e.g., GaAs, InP, dopants). This process removes contaminants which coalesce on the ingots and cause poor wipe-off.

Method of preparing indium ingots

Cleaning technique for LPE melt ingots

Liquid phase epitaxy (LPE) growth of a Group III-V semiconductor compound layer upon a Group III-V semiconductor compound substrate containing phosphorus is accomplished in a graphite meltholder by heating the substrate in an atmosphere of nitrogen or helium and contacting the substrate with a liquid melt, capable of growing the layer, in an atmosphere of hydrogen.

LPE Growth on group III-V compound semiconductor substrates containing

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Union, NJ, United States of America

Jose A Lourenco