Freescale Semiconductor,inc.

Nxp USA, Inc.

Motorola Corporation

Jose A Camarena

Dale John McQuirk

Miten H Nagda

James W Miller

Michael A Stockinger

Michael G Khazhinsky

Khoi Mai

Wenzhong Zhang

Fujio Takeda

Geoffrey B Hall

Joseph Y Chan

A determination is made if a temperature of a system has exceeded a hot threshold or a cold threshold. At room temperature, a first adjustment is determined for first nominal settings. The first nominal settings are for a first input to a first comparator. At room temperature, a second adjustment is determined for second nominal settings. The second nominal settings are for a first input to a second comparator. The temperature is monitored, during normal operation of the system, using a temperature dependent voltage with the first comparator adjusted with the first adjustment and second comparator adjusted with the second adjustment.

Systems and methods for calibrating a temperature detection module

A voltage regulation system includes a voltage regulator configured to output a control signal indicating whether a voltage based on output of the voltage regulator is lower than a specified value. A charge pump is configured to output a voltage and a charging current. A pump monitor is configured to receive the control signal and the output voltage of the charge pump, and activate the charge pump when the control signal indicates the voltage based on output of the voltage regulator is lower than a specified value and the output voltage of the charge pump is lower than a threshold value.

Charge pump LDO with secondary sensing for low power need based refresh

An integrated circuit includes first and second transistors, a switch, and a power-on reset (POR) circuit. The first transistor has a first current electrode, a second current electrode, and a control electrode. The second transistor has a first current electrode coupled to the second current electrode of the first transistor, a second current electrode, and a control electrode. The switch is for coupling the first and second transistors to receive a power supply voltage in response to an asserted bias control signal. The POR circuit has a latch-up detection circuit coupled to receive the power supply voltage and to a control terminal of the switch. The latch-up detection circuit is for detecting a low voltage condition of the power supply voltage, and in response, deasserting the bias control signal to decouple the first and second transistors from the power supply voltage.

Integrated circuit having latch-up recovery circuit

A transmission gate circuit includes a first transmission gate, having a first switching device, coupled in series with a second transmission gate, having a second switching device, and control circuitry which places the first transmission gate and the second transmission gate into a conductive state to provide a conductive path through the first transmission gate and the second transmission gate. When the voltage of the first terminal is above a first voltage level and outside a safe operating voltage area of at least one of the first and second switching device, the first switching device remains within its safe operating voltage area and the second switching device remains within its safe operating voltage area.

Transmission gate circuitry for high voltage terminal

A circuit (,) provides Electrostatic Discharge (ESD) protection for internal elements in an integrated circuit during an ESD event. The circuit (,) includes cascoded NMOSFETs (,), with the upper NMOSFET (,) connected to voltage divider circuitry (,). The voltage divider circuitry (,) provides a first bias voltage to the gate of the upper NMOSFET (,) during an ESD event and a second bias voltage during normal operation. Preferably, the first bias voltage is approximately,of the drain voltage of the upper NMOSFET (,). Under these bias conditions the cascoded NMOSFETs exhibit a maximum voltage threshold for initiation of parasitic lateral bipolar conduction.

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Austin, TX, United States of America

Jose A Camarena