Stichting Imec Nederland

Katholieke Universiteit Leuven

Imec

Katholieke Universiteit Leuven, Ku Leuven R&d

Jos Huisken

Francky Catthoor

Stefan Cosemans

Wim Dehaene

Vibhu Sharma

Maryam Ashouei

Praveen Raghavan

Wim Van Thillo

Robert Fasthuber

Evangelos Bempelis

Elena Hammari

Per Gunnar Kjeldsberg

Methods are disclosed for system scenario-based design for an embedded platform whereon a dynamic application is implemented. The application meets at least one guaranteed constraint. Temporal correlations are assumed in the behavior of internal data variables used in the application, with the internal data variables representing parameters used for executing a portion of the application. An example method includes determining a distribution over time of an N-dimensional cost function, with N an integer number N&#x2267;1, corresponding to the implementation on the platform for a set of combinations of the internal data variables. The method also includes partitioning an N-dimensional cost space in at least two bounded regions, each bounded region containing cost combinations corresponding to combinations of values of the internal data variables of the set that have similar cost and frequency of occurrence, whereby one bounded region is provided for rarely occurring cost combinations.

Method for system scenario based design of dynamic embedded systems

A memory device having complementary global and local bit-lines, the complementary local bit-lines being connectable to the complementary global bit-lines by means of a local write receiver which is configured for creating a full voltage swing on the complementary local bit lines from a reduced voltage swing on the complementary global bit lines. The local write receiver comprises a connection mechanism for connecting the local to the global bit-lines and a pair of cross-coupled inverters directly connected to the complementary local bit lines for converting the reduced voltage swing to the full voltage swing on the complementary local bit lines.

Local write and read assist circuitry for memory device

An ultra low power sense amplifier circuit for amplifying a low swing input signal to a full swing output signal is disclosed. In one aspect, the amplifier circuit includes a first amplifier stage for pre-amplifying the input signal to an intermediate signal on its internal nodes, a second amplifier stage for amplifying the intermediate signal to the output signal, and a control circuit for sequentially activating the first and second amplifier. The first amplifier has a capacitor for limiting energy consumption and two upsized PMOS transistors without NMOS transistors.

Variability resilient sense amplifier with reduced energy consumption

Growing community of inventors

GV Waalre, Netherlands

Jos Huisken