Imec Vzw

University of Ghent

International Business Machines Corporation

Imec

Katholieke Universiteit Leuven

Stichting Imec Nederland

Huawei Technologies Co., Limited

Imec USA Nanoelectronics Design Center

Joris Van Campenhout

Maria Ioanna Pantouvaki

Solomon Assefa

William M Green

Ashwyn Srinivasan

Yurii A Vlasov

Peter Verheyen

Bernardette Kunert

Philippe Absil

Ying Di Zhang

Jack Oon Chu

Martin Michael Frank

Young-Hee Kim

George Gabriel Totir

Dries Van Thourhout

Younghee Kim

Günther Roelkens

Geert Hellings

Wim Bogaerts

Clement Merckling

Peter Offermans

Young-hee Kim

Geert Van Steenberge

Jeroen Missinne

Anton Vasiliev

Giorgio Signorello

Yurri A Vlasov

Didit Yudistira

Orges Furxhi

Irina Kulkova

Yuting Shi

Hongtao Chen

Zhechao Wang

Younghyun Kim

Douglas Charles La Tulipe

Junwen He

Yigit Yilmaz

Do Won Kim

Olivier Rousseaux

The present disclosure relates to an optical alignment compensation system for a gas detection system, in particular, to an integrated alignment compensation system for an open-path gas sensing system. The optical alignment compensation system of the disclosure is able to compensate for unwanted drifts of a retroreflector. The optical alignment system comprises an array of transceiver pairs, wherein each transceiver pair is configured to transmit and receive light with an optical spectrum in an absorption region of a gas to be detected. Further, it comprises a retroreflector arranged at a nominal position and configured to reflect the light. Further, it comprises an optical element arranged and configured to direct the light from at least one of the transceiver pairs along an optical path through the gas to the retroreflector, to receive the light reflected by the retroreflector along the optical path, and to direct the reflected light to the respective transceiver pair. Further, it comprises a control unit configured to select one of the transceiver pairs for transmitting and receiving the light, wherein the control unit is configured to select the transceiver pair that receives the reflected light with the highest signal response.

Optical alignment compensation system for a gas detection system

A silicon-based photonic chip is provided that includes an interface for optically coupling the photonic chip to an optical fiber or an optical fiber assembly. The interface includes: a single-mode waveguide configured to guide light and to provide a first light beam; a first optical element configured to expand the light beam in a first direction in-plane of the photonic chip, thereby providing an expanded light beam; and a second optical element configured to deflect and to further expand the expanded light beam in a second direction, thereby providing an output light beam from the photonic chip. Also provided are methods for fabricating such a photonic chip.

Two-stage expanded beam optical coupling

An avalanche photodiode (APD) device, in particular, a lateral separate absorption charge multiplication (SACM) APD device, and a method for its fabrication is provided. The APD device comprises a first contact region and a second contact region formed in a semiconductor layer. Further, the APD device comprises an absorption region formed on the semiconductor layer, wherein the absorption region is at least partly formed on a first region of the semiconductor layer, wherein the first region is arranged between the first contact region and the second contact region. The APD device further includes a charge region formed in the semiconductor layer between the first region and the second contact region, and an amplification region formed in the semiconductor layer between the charge region and the second contact region. At least the absorption region is curved on the semiconductor layer.

Avalanche photodiode device with a curved absorption region

A method is provided for fabricating an avalanche photodiode (APD) device, in particular, a separate absorption charge multiplication (SACM) APD device. The method includes forming a first contact region and a second contact region in a semiconductor layer. Further, the method includes forming a first mask layer above at least a first contact region of the semiconductor layer adjacent to the first contact region, and forming a second mask layer above and laterally overlapping the first mask layer. Thereby, a mask window is defined by the first mask layer and the second mask layer, and the first mask layer and/or the second mask layer are formed above a second contact region of the semiconductor layer adjacent to the second contact region. Further, the method includes forming a charge region in the semiconductor layer through the mask window, wherein the charge region is formed between the first contact region and the second contact region, and comprises forming an absorption region on the first contact region using the first mask layer. An APD fabricated by the disclosed method is also provided.

Method for fabricating an avalanche photodiode device

A monolithic integrated electro-optical phase modulator, a Mach-Zehnder modulator including one or more of the phase modulators, and method for fabricating the phase modulator by III-V-on-silicon semiconductor processing are provided. The phase modulator includes a silicon-based n-type substrate base layer, and a III-V n-type ridge waveguide for propagating light, wherein the ridge waveguide protrudes from and extends along the n-type substrate base layer. Further, the phase modulator includes one or more insulating layers provided on the ridge waveguide, wherein the one or more insulating layers have together a thickness of 1-100 nm, and a silicon-based p-type top cover layer provided on the one or more insulating layers at least above the ridge waveguide.

Monolithic III-V-on-silicon opto-electronic phase modulator with a ridge waveguide

A solid-state device for photo detection, in general, of terahertz radiation is disclosed. One aspect is a detector device comprising a body having a photoconductive material, a first antenna element connected to a first portion of the body, and a second antenna element connected to a second portion of the body. The first antenna element and the second antenna element are arranged to induce an electric field in the body in response to an incident signal. Further, the device has a waveguide arranged to couple light into the photoconductive material via a coupling interface between the waveguide and the body, where the coupling interface faces away from the first portion and the second portion of the body and is closer to the first portion than to the second portion.

Detector device with photoconductive body

An electrically-operated semiconductor laser device and method for forming the laser device are provided. The laser device includes a fin structure to which a waveguide is optically coupled. The waveguide is optically coupled to passive waveguides at either end thereof. The fin structure includes an array of fin elements, each fin element comprising Group III-V materials.

Laser devices

A III-V semiconductor waveguide nanoridge structure having a narrow supporting base with a freestanding wider body portion on top, is disclosed. In one aspect, the III-V waveguide includes a PIN diode. The waveguide comprises a III-V semiconductor waveguide core formed in the freestanding wider body portion; at least one heterojunction incorporated in the III-V semiconductor waveguide core; a bottom doped region of a first polarity positioned at a bottom of the narrow supporting base, forming a lower contact; and an upper doped region of a second polarity, forming an upper contact. The upper contact is positioned in at least one side wall of the freestanding wider body portion.

III-V semiconductor waveguide nanoridge structure

Example embodiments relate to active-passive waveguide photonic systems. An example embodiment includes a monolithic integrated active/passive waveguide photonic system. The system includes a substrate having positioned thereon at least one active waveguide and at least one passive waveguide. The at least one active waveguide and the at least one passive waveguide are monolithically integrated and are arranged for evanescent wave coupling between the waveguides. The at least one active waveguide and the at least one passive waveguide are positioned so that at least a portion of each waveguide does not overlap the other waveguide, both in a height direction and in a lateral direction with respect to the substrate.

Active-passive waveguide photonic system

Example embodiments relate to an electro-optical device that includes a vertical p-i-n diode waveguide. The electro-optical device includes a waveguide portion adapted for propagating a multimode wave, the waveguide portion including an intrinsic semiconductor region of the vertical p-i-n diode, a first contact and a second contact for electrically contacting a first electrode and a second electrode of the vertical p-i-n diode. The device also includes an input section for coupling radiation into the waveguide portion and an output section for coupling radiation out of the waveguide portion. The input section, the output section, and the waveguide portion are configured to support a multimode interference pattern for the multimode wave with an optical field with a lateral inhomogeneous spatial distribution in the waveguide portion including regions with higher optical field intensity and regions with lower optical field intensity. The second contact physically contacts the second electrode.

Multimode interference based VPIN diode waveguides

Semiconductor photonics devices for coupling radiation to a semiconductor waveguide are described. An example photonics device comprises a semiconductor-on-insulator substrate comprising a semiconductor substrate, a buried oxide layer positioned on top of the semiconductor substrate, and the semiconductor waveguide on top of the buried oxide layer to which radiation is to be coupled. The example device also comprises a grating coupler positioned on top of the buried oxide layer and configured for coupling incident radiation to the semiconductor waveguide. The semiconductor substrate has a recessed portion at the backside of the semiconductor substrate for receiving incident radiation to be coupled to the semiconductor waveguide via the backside of the semiconductor substrate and the grating coupler.

Radiation coupler

An integrated avalanche photodetector and a method for fabrication thereof. The integrated avalanche photodetector comprises a Ge body adapted to conduct an optical mode. The Ge body comprises a first p-doped region that extends from a first main surface to a second main surface of the Ge body. The Ge body further comprises a first n-doped region that extends from the first main surface towards the second main surface of the Ge body. An intrinsic region occupies the undoped part of the Ge body. A first avalanche junction is formed by the first n-doped region that is located aside the p-doped region. The Ge body further comprises an incidence surface, suitable for receiving an optical mode, and a second n-doped Ge region that covers the Ge body and forms a second avalanche junction with the first p-doped region at the first main surface.

Integrated avalanche germanium photodetector

The present disclosure relates to a method for integrating a sub-micron III-V waveguide laser on a semiconductor photonics platform as well as to a corresponding device/system. The method comprises providing on a semiconductor substrate an electrically insulating layer, etching a trench having a width in the range between 50 nm and 800 nm through the electrically insulating layer, thereby locally exposing the silicon substrate, providing a III-V layer stack in the trench by local epitaxial growth to form a channel waveguide, and providing a light confinement element for confining radiation in the local-epitaxial-grown channel waveguide.

Hybrid waveguide lasers and methods for fabricating hybrid waveguide lasers

An avalanche photodetector element is disclosed for converting an optical signal to an electrical signal, comprising an input waveguide and a photodetector region, the photodetector region comprising at least one intrinsic region, at least one p-doped region and at least one n-doped region, the doped regions and the at least one intrinsic region forming at least one PIN-junction avalanche photodiode, the input waveguide and the photodetector region being arranged with respect to each other such that the optical signal conducted by the input waveguide is substantially conducted into the photodetector region to the PIN-junction avalanche photodiode, the PIN-junction avalanche photodiode converting the optical signal to an electrical signal, characterized in that the photodetector region comprises more than one p-doped region and/or n-doped region, whereby these p-doped regions and/or n-doped regions are physically arranged as an array.

Avalanche photodetector element

Current may be passed through an n-doped semiconductor region, a recessed metal semiconductor alloy portion, and a p-doped semiconductor region so that the diffusion of majority charge carriers in the doped semiconductor regions transfers heat from or into the semiconductor waveguide through Peltier-Seebeck effect. Further, a temperature control device may be configured to include a metal semiconductor alloy region located in proximity to an optoelectronic device, a first semiconductor region having a p-type doping, and a second semiconductor region having an n-type doping. The temperature of the optoelectronic device may thus be controlled to stabilize the performance of the optoelectronic device.

Temperature control device for optoelectronic devices

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Joris Van Campenhout