Dalsa Corporation

Trixell

Joris Pieter Valentijn Maas

Hermanus L Peek

Willem Hendrik Maes

Daniel Wilhelmus Elisabeth Verbugt

Hein Otto Folkerts

Willem Hoekstra

Daniel Hendrik Jan Maria Hermes

Willem-Jan Toren

Daniel Wihelmus Elisabeth Verbugt

Disclosed are embodiments of a semiconductor device comprising a semiconductor body with a semiconductor image sensor comprising a two-dimensional matrix of picture elements, each picture element comprising a radiation-sensitive element coupled to MOS field effect transistors for reading the radiation-sensitive elements, wherein a semiconductor region is sunken in the surface of the body having the same conductivity type as the body and having an increased doping concentration, the semiconductor region being disposed between the radiation-sensitive elements of neighboring picture elements.

Semiconductor device with an image sensor and method for the manufacturing of such a device

A charge coupled device has a hydrogen diffusion path to diffuse hydrogen to a silicon surface. The hydrogen diffusion path extends through a top silicon oxide layer that itself extends through a first aperture in a top silicon nitride layer. The first aperture overlays a conductor formed of polycrystalline silicon at a location that transversely overlays a channel stop. The hydrogen diffusion path extends through the conductor and through an extension of the conductor that itself extends through a second aperture in a lower silicon nitride layer. The lower silicon nitride layer being one part of a gate dielectric film. The gate dielectric film also includes a lower silicon oxide layer disposed between the lower silicon nitride layer and the silicon surface. The hydrogen diffusion path extends through the lower silicon oxide layer to reach the silicon surface.

Charge-coupled image sensor comprising gate electrodes interconnected by shunt electrodes

Growing community of inventors

Eindhoven, Netherlands

Joris Pieter Valentijn Maas