International Rectifier Corporation

Jorge Munoz

Daniel Marvin Kinzer

Bharat Shivkumar

Chuan Cheah

Dan Kinzer

Rod DeLeon

A substrate having upper and lower surfaces, the upper surface including a periphery defined by first and second spaced apart side edges and front and rear spaced apart edges; a power semiconductor die disposed on the upper surface of the substrate, the die including a top surface on which at least a first metalized surface is disposed and a bottom surface; a plurality of conductive pads disposed only at the second side edge of the substrate; and a plurality of wire bonds extending from the first metalized surface to the plurality of conductive pads.

Chip-scale package

A semiconductor package includes a bottom leadframe having a bottom plate portion and at least one first terminal extending from the bottom plate portion; at least one second terminal being co-planar with the first terminal; a semiconductor power MOSFET die having a bottom surface defining a drain connection and a top surface on which a first metalized region defining a source and a second metalized region defining a gate are disposed, the bottom surface being coupled to the bottom plate of the leadframe such that the first terminal is electrically connected to the drain; a copper plate coupled to and spanning a substantial part of the first metalized region defining the source connection, the copper plate including at least one chamfered edge extending upward and away from the first metalized region; and at least one beam portion being sized and shaped to couple the copper plate portion to the at least one second terminal such that it is electrically coupled to the source.

Semiconductor package

A solderable back contact for semiconductor die consists of a titanium layer bonded to the bottom of the die. The free surface of the titanium layer is coated with a copper layer. A soft solder layer joins the bottom of the die to a copper lead frame by first heating the die to below the melting point of the solder, and then ultrasonically &ldquo;scrubbing&rdquo; the solder to cause it to bond to the die and lead frame with a minimum sized solder fillet.

Solder-on back metal for semiconductor die

A semiconductor package includes a bottom leadframe having a bottom plate portion and at least one first terminal extending from the bottom plate portion; at least one second terminal being co-planar with the first terminal; a semiconductor power MOSFET die having a bottom surface defining a drain connection and a top surface on which a first metalized region defining a source and a second metalized region defining a gate are disposed, the bottom surface being coupled to the bottom plate of the leadframe such that the first terminal is electrically connected to the drain; a copper plate coupled to and spanning a substantial part of the first metalized region defining the source connection; and at least one beam portion being sized and shaped to couple the copper plate portion to the at least one second terminal such that it is electrically coupled to the source.

Growing community of inventors

Cypress, CA, United States of America

Jorge Munoz