International Rectifier Corporation

Infineon Technologies Ag

Infineon Technologies Americas Corp.

Jorge Cerezo

Ajit Dubhashi

Thomas J Ribarich

Mark Pavier

Thomas Kimmer

Peter Bredemeier

Jianjun Cao

Norman Glyn Connah

Vijay Bolloju

Leigh Cormie

Qun Zhao

In accordance with an embodiment, a method of operating a transistor includes: switching the transistor on and off based on a control signal; monitoring a voltage of a collector node of the transistor; detecting whether the voltage of the collector node of the transistor is above a first threshold; and after detecting the voltage of the collector node of the transistor above the first threshold, regulating a voltage across a load path of the transistor to a first target voltage.

Transistor with integrated active protection

In one implementation, a power converter with over-voltage protection includes a power switch coupled to a power supply through a tank circuit, and a control circuit coupled to a gate of the power switch. The control circuit is configured to turn the power switch OFF based on a current from the tank circuit, thereby providing the over-voltage protection to the power converter. In one implementation, the power converter is a class-E power converter. In one implementation, the control circuit is configured to sense the current from the tank circuit based on a voltage drop across a sense resistor coupled to the power switch.

Power converter with tank circuit and over-voltage protection

An audio amplifier assembly that includes a semiconductor package having a semiconductor power die tuned for class D amplifier applications and a conductive clip used for low inductance integration into the amplifier circuit.

Audio amplifier assembly

A semiconductor package that includes two semiconductor die each disposed on a respective die pad and a large tracking distance interposed between at least two leads of the package for better creepage characteristics.

Dual semiconductor die package with reverse lead form

A semiconductor package that includes two power semiconductor dies, such as power MOSFET dies, including vertical conduction MOSFETs, arranged in a half-bridge configuration is disclosed. The package may be mounted on a split conductive pad including two isolated die pads, each die pad being electrically connected to the second power electrode of the die that is on it. The split pad may include several conductive leads, including at least one output lead electrically connected to a first electrode of the first semiconductor die on the same side of the die as the control electrode and to the second electrode of the second die located on the opposite side of the second die from the control electrode.

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Palos Verdes Peninsula, CA, United States of America

Jorge Cerezo