Singulus Technologies Ag

Philipps-university Marburg

Philipps-Universität Marburg

Jörg Koch

Michael Reising

Wolfgang Stolz

Kerstin Volz

Oliver Hohn

Bernardette Kunert

Kurt Pietsch

Stefan Reinhard

Johannes Grübler

The present invention is directed to a method and an apparatus for providing vapor for a discontinuous process.

Process and device for providing vapor

The invention relates to a monolithic integrated semiconductor structure comprising a carrier layer on the basis of doped Si or doped GaP and a III/V semiconductor disposed thereupon and having the composition GaInNAsPSb, wherein x=70-100 mole-%, y=0-30 mole-%, a=0.5-15 mole-%, b=67.5-99.5 mole-%, c=0-32.0 mole-% and d=0-15 mole-%, wherein the total of x and y is always 100 mole-%, wherein the total of a, b, c and d is always 100 mole-%, and wherein the ratio of the totals of x and y on the one hand, and of a to d on the other hand, is substantially 1:1, to methods for the production thereof, new semiconductors, the use thereof for the production of luminescence diodes and laser diodes or also modulator and detector structures, which are monolithically integrated in integrated circuits on the basis of the Si or GaP technology.

III/V-semiconductor

Growing community of inventors

Dautphetal, Germany

Jörg Koch