Leybold-heraeus Gmbh

Siemens Aktiengesellschaft

Leybold Aktiengesellschaft

Jorg Kieser

Michael Geisler

Reiner Kukla

Reinhard Maier

Hans Aichert

David-Walter Branston

Rolf Wilhelm

Michael Sellschopp

Eberhard Rauchle

Michael Neusch

Werner Hartmann

Thomas Hammer

Fritz Pohl

Rainer Gegenwart

David Walter Branston

Wilfried Jaehner

Gerd Deppisch

Hubert Grosse-Wilde

Erich Voss

Reinhard Steger

Markus Klein

Robert Seebock

Gonde Dittmer

Klaus Wilmes

Gert Vogel

Dietrich Amft

Hans G Lotz

In particular for exhaust-gas purification, different processes have been proposed. According to the invention, the polluted exhaust gas flows through a reactor volume to which non-thermal gas discharges are applied, while being brought into contact with a solid reducing agent at least once, and preferably several times. The reducing agent can, in particular, consist of carbon fibers. A suitable device for combining dielectric barrier discharges with the reduction has means for field enhancement substantially periodically spaced in the reactor.

Process and device for purifying exhaust gases containing nitrogen oxides

Current--limiting switch

Process for monitoring the wear of at least one contact in a switching

Device for detoxifying exhaust fumes from mobile equipment

Switching component for detecting contact erosion

Variable high-current resistor, especially for use as protective element

The invention relates to an apparatus for producing a plasma and treating substrates therein. The plasma produced by means of microwaves serves to coat a substrate which is situated in a chamber (5) having metal walls (6,7,12,13). The microwaves are repeatedly reflected at the metal walls (6,7,12,13), so that the chamber (5) has numerous microwave modes. By means of permanent magnets, which are placed either inside the chamber (5) or outside the chamber (5) in the vicinity of the substrate that is to be coated, it is possible to produce within this chamber (5) an electron-cyclotron resonance which permits a locally controlled ignition of the plasma.

Process for depositing silicon oxide on a substrate

Cathode sputtering apparatus having a hollow cathode on the magnetron principle with a cathode base (5) in which a hollow target (9) with a cylindrical sputtering surface (10) and a cylindrical outer surface is disposed. The cathode base (5) has a cooling passage (6). The target is externally surrounded by a magnet system (18) with magnet poles for the production of a rotationally symmetrical tunnel of magnetic lines of force closed on the circumference and over the sputtering surface. Outside of the space surrounded by the sputtering surface (10) there is disposed at least one anode (3, 4). A transport path for a substrate to be coated passes through the target (9) and the at least one anode. The cooling passage (6) is sealed off from the target (9) by a wall (7). Due to a narrow clearance, as soon as the target (9) reaches its operating temperature it comes in thermal contact with the wall (7). The [north] pole faces (N) of the magnet system (18) are on one side and the other [south] pole faces (S) lie on the other side of the end faces of the target (9) and radially on a radius which is equal to or greater than the radius of the sputtering surface (10). The magnet system (18) is held at a freely adjustable ('floating') potential in operation by insulating spaces (11, 19, 10).

Cathode sputtering apparatus on the magnetron principle with a hollow

The plasma produced by means of microwaves in the presence of a magnetic field and a gas serves to coat a substrate which is situated in a chamber having metal walls. The microwaves are repeatedly reflected at the metal walls, so that the chamber has numerous microwave modes. By means of permanent magnets, which are placed either inside the chamber or outside the chamber in the vicinity of the substrate that is to be coated, it is possible to produce within this chamber an electron-cyclotron resonance which permits a locally controlled ignition of the plasma.

Apparatus for producing a plasma and for the treatment of substrates

A sputtering cathode for the coating of substrates. The cathode has a base, a target of nonmagnetic material, and a magnet system having exposed pole faces for the production of a tunnel of magnetic lines of force overarching the sputtering surface. The target is provided with at least two continuous projections lying one inside the other, which contain at least one sputtering surface between them, and have confronting wall surfaces. The pole faces are located on both sides of the projections and sputtering surface between them such that magnetic lines of force issue perpendicularly from the one wall surface and, after crossing the sputtering surface, re-enter perpendicularly the opposite wall surface. The magnet system has permanent magnets magnetized parallel to the projections, which are yoked together on the sides facing away from the projections by a soft-magnetic base, and are provided on the sides facing the projections with soft-magnetic pole shoes extending over at least a part of the height of the projections.

Sputtering cathode based on the magnetron principle

A microwave apparatus injects microwave energy into a receptacle that is at least partially transparent to microwave energy. The receptacle has a window of microwave transparent material. The apparatus includes at least one microwave transmitter and one open microwave guide which is connected to the microwave transmitter and which is situated in the immediate vicinity of the receptacle. The open microwave guide has a plurality of parallel rungs and forming a slow - wave structure of the strapped bar type. The microwave guide is of a symmetrical V-shape, and at the apex of the V it is at a smaller distance from the window than at its feed point. A microwave feeder is disposed at at least both ends of the open microwave guide.

Apparatus for injecting microwave energy by means of an open microwave

Device for the plasma treatment of substrates (7) in a high frequency-excited plasma discharge between two electrodes (3, 8), supplied by a high-frequency source (6). The first electrode is constructed as a hollow anode (3) and the second electrode (8), which carries the substrate (7), is deposited in front of the hollow space (10) of the hollow anode or can be passed by this. Moreover, the hollow anode (3) has an edge (9), which is drawn out in the direction of the second electrode (8) and which, relative to the second electrode, forms a gap s.sub.1 all around that does not exceed 10 mm in width. In order to form the electrode so that the gap width is not a critical feature, projections (12) are disposed in the hollow space (10) of the hollow anode (3), said projections increasing the internal surface area (11) of the hollow anode (3). Preferably, these projections (12) are constructed as rib structures, which may also assume a honeycomb form.

Plasma treatment apparatus

A method for producing amorphous carbon coatings on substrates by degrading a gaseous hydrocarbon compound in an ionized gas atmosphere within a reaction chamber. An electromagnetic alternating field is used for the excitation of the plasma. To achieve the object of increasing the deposition rate and permitting substrates even of great surface area to be uniformly coated, the frequency of the electromagnetic alternating field is selected in the microwave region (915 to 2,540 MHz). Furthermore, the microwave energy is put into the gaseous atmosphere by means of at least one ladder-type waveguide situated outside of the reaction chamber. The invention also relates to a substance provided with an amorphous carbon coating, in which an adhesion-mediating coating consisting of a polymer from the group of the siloxanes or silazanes is provided between the substrate and the amorphous carbon coating.

Method of producing amorphous carbon coatings on substrates and

Apparatus for coating substrates by means of a reaction for depositing atoms or molecules which is initiated by a plasma. A reaction chamber (1) is equipped with at least one window (22, 23), penetrable by microwaves, with at least one wave-guide structure (16, 17), arranged outside the chamber (1) and in front of the window (22, 23), and with a distributing means (25) discharging into the chamber. According to the invention and for the purpose of achieving the object of facilitating inspection and repairs, the window (22, 23) penetrable by microwaves, the one or more wave-guide structures (16, 17) and the distributing means (25) are all secured in or on a support frame (10), which can be removed, or swung away, from the reaction chamber (1) as a single unit.

Apparatus for coating substrates by plasma polymerization

A magnetron cathode for sputtering ferromagnetic targets. The magnet system consists of magnet poles of opposite polarity lying one within the other disposed on a basic cathode body. Between the target and the pole shoes, which consist of target material, two circumferential air gaps in the direction of the depth of the system are formed. The surfaces of projection of the magnet poles and target do not overlap. For the purpose of making the target ablation uniform while simultaneously achieving high sputtering rates, the pole shoes are separated, in accordance with the invention, each by a distance S from the magnet poles. The magnet poles lie in an area which runs from a plane passing through the sputtering surface in the direction of the depth of the system. Between the pole shoes and the target, on the one hand, and the magnet poles on the other, there is disposed a thermally conductive metal body which is in communication with at least one coolant passage and consists of a nonferromagnetic material.

Magnetron cathode for sputtering ferromagnetic targets

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Forchheim, Germany

Jorg Kieser